US4394401A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of plasma enhanced chemical vapor deposition of phosphosilicate glass film
Assignee: Fujitsu Ltd
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Filing: 1981-08-07
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Granted: 1983-07-19
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Expires: 2001-08-07
Abstract
Abstract A method of plasma enhanced chemical vapor deposition of a phosphosilicate glass film on a substrate from a reaction gas mixture including SiH 4 , N 2 O and PH 3 is disclosed. This deposition is effected under the conditions such that a mol ratio of N 2 O to SiH 4 (N 2 O/SiH 4 ) in the reaction gas mixture is 50 or more and that a mol ratio of PH 3 to SiH 4 (PH 3 /SiH 4 ) in the reaction gas mixture is 0.08 or less. In the phosphosilicate glass film thus deposited, no cracking occurs due to a high temperature heat-treatment and due to the stress, caused by cooling the deposited films to an ordinarily ambient temperature.
Inventors
- 👤 Yoshimi Shioya
- 👤 Mamoru Maeda
- 👤 Kanetake Takasaki
- 👤 Mikio Takagi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 08:04
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/44; C23C16/50; C23C16/505; C23C16/509; C23C16/5096; H10P14/69215; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6336
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
98 words
A method of plasma enhanced chemical vapor deposition of a phosphosilicate glass film on a substrate comprising the step of exposing the substrate to a reaction gas mixture including SiH 4 , N 2 O and PH 3 , said deposition being effected under conditions such that the reaction gas mixture has a mol ratio of N 2 O to SiH 4 (N 2 O/SiH 4 ) which is greater than or equal to 50 and a mol ratio of PH 3 to SiH 4 (PH 3 /SiH 4 ) which is less than or equal to 0.08.
Claim 2
Independent Claim
98 words
A method of plasma enhanced chemical vapor deposition of a phosphosilicate glass film on a substrate comprising the step of exposing the substrate to a reaction gas mixture including SiH 4 , N 2 O and PH 3 , said deposition being effected under conditions such that the reaction gas mixture has a mol ratio of N 2 O to SiH 4 (N 2 O/SiH 4 ) which is greater than or equal to 50 and a mol ratio of PH 3 to SiH 4 (PH 3 /SiH 4 ) which is less than or equal to 0.08.
Claim 3
Dependent Claim
32 words
A method as claimed in claim 1, wherein the exposing step is effected at a pressure of from 0.1 to 2 Torr and at a temperature of from 20° to 450° C.
Claim 4
Dependent Claim
25 words
A method as claimed in claim 1, wherein the exposing step is effected by using a radio-frequency power of from 50 KHz to 2.45 GHz.
Claim 5
Dependent Claim
28 words
A method as claimed in claim 1, wherein the mol ratio of N 2 O to SiH 4 in the reaction gas mixture is from 50 to 100.
Claim 6
Dependent Claim
27 words
A method as claimed in claim 1, wherein the mol ratio of PH 3 to SiH 4 in the reaction gas mixture is from 0.03 to 0.06.
Claim 7
Independent Claim
107 words
A method of depositing a phosphosilicate glass film on a substrate, comprising the steps of: (a) placing the substrate within a chamber; (b) evacuating the chamber; (c) heating the atmosphere in the chamber; (d) introducing a reaction gas mixture of SiH 4 , N 2 O, and PH 3 into the chamber, the mol ratio of N 2 O to SiH 4 being greater than or equal to 50 and the mol ratio of PH 3 to SiH 4 being less than or equal to 0.08; and (e) applying radio-frequency power to the reaction gas mixture so that the phosphosilicate glass film is deposited on the substrate.
Claim 8
Independent Claim
107 words
A method of depositing a phosphosilicate glass film on a substrate, comprising the steps of: (a) placing the substrate within a chamber; (b) evacuating the chamber; (c) heating the atmosphere in the chamber; (d) introducing a reaction gas mixture of SiH 4 , N 2 O, and PH 3 into the chamber, the mol ratio of N 2 O to SiH 4 being greater than or equal to 50 and the mol ratio of PH 3 to SiH 4 being less than or equal to 0.08; and (e) applying radio-frequency power to the reaction gas mixture so that the phosphosilicate glass film is deposited on the substrate.
Claim 9
Dependent Claim
28 words
A method as claimed in claim 6, wherein said evacuating step (b) includes maintaining the atmosphere in the chamber at a pressure of from 0.1 to 2 Torr.
Claim 10
Dependent Claim
23 words
A method as claimed in claim 7, wherein the step (e) includes applying a radio-frequency power of from 50 KHz to 2.45 GHz.
Claim 11
Dependent Claim
25 words
A method as claimed in claim 8, wherein said heating step (c) comprises heating the atmosphere to a temperature of from 20° to 450° C.
Claim 12
Dependent Claim
49 words
A method as claimed in claim 9, wherein the mol ratio of N 2 O to SiH 4 in the reaction gas mixture is from 50 to 100 and wherein the mol ratio of PH 3 to SiH 4 in the reaction gas mixture is from 0.03 to 0.06.
References Cited (Backward Citations)
US4223048A
Cited
US4289797A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1986-07-18 | 1987-01-17 | 1987-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1990-07-18 | 1991-01-17 | 1991-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1994-07-18 | 1995-01-17 | 1995-07-19 | $7700.00 | Window Closed / Lapsed |