Patent US5319601A successfully refreshed from Google Patents.
US5319601A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Power supply start up circuit for dynamic random access memory
Assignee: Micron Memory Japan Ltd
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Filing: 1992-10-08
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Granted: 1994-06-07
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Expires: 2012-10-08
Abstract
Abstract A power supply circuit for a DRAM has a power-on detection circuit which detects when an external power supply potential reaches a predetermined potential and produces first and second detection signals, and an internal power supply circuit which generates an internal power supply potential. The power supply circuit further has a first intermediate potential generating circuit which generates a first intermediate potential from the external power supply potential and supplies it to an intermediate potential supplying node and, when the first detection signal is produced and the first intermediate potential reaches a predetermined potential, stops the supply of the first intermediate potential to the intermediate potential supplying node and the intermediate potential generating function, and a second intermediate potential generating circuit which generates a second intermediate potential from the internal power supply potential and, when the second detection signal is produced, supplies the second intermediate potential to the supplying node. The first intermediate potential generating circuit has a larger driving capability than that of the second intermediate potential generating circuit. It is made possible to shorten the rising time of the intermediate potential after the power is switched-on and to reduce the overall current consumption.
Inventors
- 👤 Koji Kawata
- 👤 Tadahiko Sugibayashi
- 👤 Takahiro Hara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 17:25
CPC Classifications
G; G11; G11C; G11C5/00; G11C5/14; G11C5/147; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C11/4074; H; H03; H03K; H03K17/00; H03K17/22; H03K17/223; H03K2217/00; H03K2217/0036
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
217 words
A power supply circuit for a dynamic RAM comprising: a power-on detection circuit which detects when an external power supply potential externally supplied reaches a predetermined potential after power is switched on, and produces a first and a second detection signal; an internal power supply circuit which receives the external power supply potential and generates an internal power supply potential of a potential lower than said external power supply potential; a first intermediate potential generating circuit which receives said external power supply potential, generates a first intermediate potential and supplies it to an intermediate potential supplying node and, when said first detection signal is present and said first intermediate potential reaches a predetermined potential, stops the supply of said first intermediate potential to said intermediate potential supplying node and stops the operation of the first intermediate potential generating circuit, said first intermediate potential generating circuit having a predetermined intermediate-potential driving capability for said intermediate potential supplying node; and a second intermediate potential generating circuit which receives said internal power supply potential and generates a second intermediate potential and, when said second detection signal is present, supplies said second intermediate potential to said intermediate potential supplying node, said second intermediate potential generating circuit having an intermediate-potential driving capability smaller than that of said first intermediate potential generating circuit.
Claim 2
Dependent Claim
217 words
A power supply circuit for a dynamic RAM comprising: a power-on detection circuit which detects when an external power supply potential externally supplied reaches a predetermined potential after power is switched on, and produces a first and a second detection signal; an internal power supply circuit which receives the external power supply potential and generates an internal power supply potential of a potential lower than said external power supply potential; a first intermediate potential generating circuit which receives said external power supply potential, generates a first intermediate potential and supplies it to an intermediate potential supplying node and, when said first detection signal is present and said first intermediate potential reaches a predetermined potential, stops the supply of said first intermediate potential to said intermediate potential supplying node and stops the operation of the first intermediate potential generating circuit, said first intermediate potential generating circuit having a predetermined intermediate-potential driving capability for said intermediate potential supplying node; and a second intermediate potential generating circuit which receives said internal power supply potential and generates a second intermediate potential and, when said second detection signal is present, supplies said second intermediate potential to said intermediate potential supplying node, said second intermediate potential generating circuit having an intermediate-potential driving capability smaller than that of said first intermediate potential generating circuit.
Claim 3
Dependent Claim
193 words
A power supply circuit for a dynamic RAM according to claim 1, wherein said first intermediate potential generating circuit comprises a differential amplifier circuit formed by a first transistor having a gate connected to said intermediate potential supplying node; a second transistor having a gate receiving a reference voltage and a source connected to a source of said first transistor; a third transistor having a drain connected to the common sources of said first and second transistors, and a source grounded; a fourth transistor having a gate and a drain connected to a drain of said first transistor, and a source connected to a node to which said external power supply potential is inputted; and a fifth transistor having a gate connected to the gate of said fourth transistor, a drain connected to a drain of said second transistor, and a source connected to the node to which said external power supply potential is inputted, said fifth transistor together with said fourth transistor forming a current-mirror type load circuit for said first and second transistors, and said first intermediate potential being outputted from a common connection node of said second and fifth transistors.
Claim 4
Dependent Claim
32 words
A power supply circuit for a dynamic RAM according to claim 2, wherein said first to third transistors are N-channel MOS transistors, and said fourth and fifth transistors are P-channel MOS transistors.
Claim 5
Dependent Claim
50 words
A power supply circuit for a dynamic RAM according to claim 2, wherein said first intermediate potential generating circuit comprises a control circuit which control the supply of said first intermediate potential to said intermediate potential supplying node in accordance with said first detection signal from said power-on detection circuit.
Claim 6
Dependent Claim
37 words
A power supply circuit for a dynamic RAM according to claim 2, wherein said first intermediate potential generating circuit further comprises a reference voltage generating circuit which produces said reference voltage from said external power supply potential.
Claim 7
Dependent Claim
48 words
A power supply circuit for a dynamic RAM according to claim 1, wherein said power-on detection circuit also receives said internal power supply potential from said internal power supply circuit, and produces said second detection signal upon detecting when said internal power supply potential reaches a predetermined potential.
Claim 8
Dependent Claim
64 words
A power supply circuit for a dynamic RAM according to claim 1, wherein a plurality of said first intermediate potential generating circuits for generating a plurality of said first intermediate potentials different from one another and a plurality of said second intermediate potential generating circuit for generating a plurality of said second intermediate potentials different from one another are provided for the dynamic RAM.
Claim 9
Dependent Claim
207 words
A power supply circuit for a dynamic RAM according to claim 1, wherein said second intermediate potential generating circuit comprises a first resistor receiving at its one end said internal power supply potential; a second resistor having one end grounded; a first transistor having a source connected to the other end of said first resistor and a gate receiving said second intermediate potential; and a second transistor having a source connected to the other end of said second resistor and a gate receiving said second intermediate potential; a third transistor having a gate and a drain commonly connected to a drain of said first transistor; a fourth transistor having a source connected to a source of said third transistor, a gate and a drain commonly connected to a drain of said second transistor, a fifth transistor having a drain receiving said internal power supply potential, a gate connected to the gate of the third transistor; and a sixth transistor having a source grounded, a gate connected to the gate of said fourth transistor, a drain connected to a source of said fifth transistor, said second intermediate potential being outputted from a connection node between the source of said fifth transistor and the drain of said sixth transistor.
Claim 10
Dependent Claim
34 words
A power supply circuit for a dynamic RAM according to claim 8, wherein said first and fourth transistors are P-channel MOS transistors, and said second, third, fifth and sixth transistors are N-channel MOS transistors.
Claim 11
Dependent Claim
51 words
A power supply circuit for a dynamic RAM according to claim 8, wherein said second intermediate potential generating circuit further comprises a control circuit which controls the supply of said second intermediate potential to said intermediate potential supplying node in accordance with said second detection signal from said power-on detection circuit.
Claim 12
Dependent Claim
60 words
A power supply circuit for a dynamic RAM according to claim 10, wherein said control circuit includes an N-channel MOS transistor having a drain connected to the connection node between the source of said fifth transistor and the drain of said sixth transistor, a gate receiving said second detection signal, and a source connected to said intermediate potential supplying node.
References Cited (Backward Citations)
US5086238A
Cited
US4930112A
Cited
US5197033A
Cited
US5087850A
Cited
US5063304A
Cited
US5063304B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-06 | 1997-12-06 | 1998-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-06 | 2001-12-06 | 2002-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-06 | 2005-12-06 | 2006-06-07 | $7700.00 | Window Closed / Lapsed |