Low temperature ozonolysis of silicon and ceramic oxide precursor polymers to ceramic coatings

Claim 3

The method of claim 1 further comprising applying a passivating coating to said ceramic or ceramic-like coating, said passivating coating selected from the group consisting of (i) silicon containing coatings, (ii) silicon carbon-containing coatings, (iii) silicon nitrogen-containing coatings, (iv) silicon carbon nitrogen containing coatings and (v) an additional silicon dioxide and ceramic oxide coating, wherein the silicon coating is applied onto the ceramic or ceramic-like coating by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, (b) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, or (c) metal assisted chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof; and wherein the silicon carbon coating is applied by a means selected from the group consisting of (1) chemical vapor deposition of a silane, alkylsilane, halosliana, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, (2) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane or (3) plasma enhanced chemical vapor deposition of a silacyclobutane or disilacyclobutane; and wherein the silicon nitrogen-containing coating is deposited by a means selected from-the group consisting of (A) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (B) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane, or mixtures thereof in the presence of ammonia or (C) ceramification of a silicon and nitrogen containing preceramic polymer, and wherein the silicon carbon nitrogen-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of hexamethyldisilazane, (ii) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (iii) chemical vapor deposition of silane, alkylsilane, halosliana, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, (iv) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia and (v) ceramification of a preceramic solution comprising a carbon substituted polysilazane, polysilacyclobutasilazane or polycarbosilane in the presence of ammonia; and wherein the silicon dioxide and ceramic oxide coating is applied by ceramification of a preceramic mixture comprising a silicon dioxide precursor and a ceramic oxide precursor, to produce the silicon-containing passivating coating, whereby a dual layer, ceramic or ceramic-like, coating is obtained on the substrate.

Claim 4

The method of claim 1 further comprising applying a passivating coating to said ceramic or ceramic-like coating, said passivating coating selected from the group consisting of (i) silicon carbon-containing coatings, (ii) silicon nitrogen-containing coatings, (iii) silicon carbon nitrogen containing coatings and (iv) an additional silicon dioxide and ceramic oxide coating, wherein the silicon carbon coating is applied by a means selected from the group consisting of (1) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, (2) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane or (3) plasma enhanced chemical vapor deposition of a silacyclobutane or a disilacyclobutane; and wherein the silicon nitrogen-containing coating is deposited by a means selected from the group consisting of (A) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (B) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane, or mixtures thereof in the presence of ammonia or (C) ceramification of a silicon and nitrogen containing preceramic polymer, and wherein the silicon carbon nitrogen-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of hexamethyldisilazane, (ii) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (iii) chemical vapor deposition of silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, (iv) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, and (v) ceramification of a preceramic solution comprising a carbon substituted polysilazane, polysilacyclobutasilazane or polycarbosilane in the presence of ammonia, and wherein the silicon dioxide and ceramic oxide coating is applied by ceramification of a preceramic mixture comprising a silicon dioxide precursor and a ceramic oxide precursor, to produce the passivating coating; and further comprising applying an additional silicon containing barrier coating to said passivating coating, said silicon containing barrier coating selected from the group consisting of (i) silicon coatings, (ii) silicon carbon-containing coatings, (iii) silicon nitrogen-containing coatings, and (iv) silicon carbon nitrogen containing coatings, wherein the silicon coating is applied onto the passivating coating by a means selected from the group consisting of (a) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, (b) plasma enhanced chemical vapor deposition a silane, halosilane, halodisilane, halopolysilane or mixtures thereof, or (c) metal assisted chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof; and wherein the silicon carbon containing coating is applied by a means selected from the group consisting of (1) chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane, (2) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane or (3) plasma enhanced chemical vapor deposition of a silacyclobutane or a disilacyclobutane; and wherein the silicon nitrogen-containing coating is deposited by a means selected from the group consisting of (A) chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane or mixtures thereof in the presence of ammonia, (B) plasma enhanced chemical vapor deposition of a silane, halosilane, halodisilane, halopolysilane, or mixtures thereof in the presence of ammonia, or (C) ceramification of a silicon and nitrogen-containing preceramic polymer and wherein the silicon carbon nitrogen-containing coating is deposited by a means selected from the group consisting of (i) chemical vapor deposition of hexamethyldisilazane, (ii) plasma enhanced chemical vapor deposition of hexamethyldisilazane, (iii) chemical vapor deposition of silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia, (iv) plasma enhanced chemical vapor deposition of a silane, alkylsilane, halosilane, halodisilane, halopolysilane or mixture thereof in the presence of an alkane of one to six carbon atoms or an alkylsilane and further in the presence of ammonia and (v) ceramification of a preceramic solution comprising a carbon substituted polysilazane, polysilacyclobutasilazane or polycarbosilane in the presence of ammonia, to produce the silicon-containing barrier coating, whereby a multilayer, ceramic or ceramic-like, coating is obtained on said substrate.

Claim 5

The method of claim 1 wherein said silicon alkoxide is of the formula Si(OR) 4 and R is an alkyl of 1-4 carbon atoms.

Claim 6

The method of claim 2 wherein said silicon alkoxide is of the formula Si(OR) 4 and R is an alkyl of 1-4 carbon atoms.

Claim 7

The method of claim 3 wherein said silicon alkoxide is of the formula Si(OR) 4 and R is an alkyl of 1-4 carbon atoms.

Claim 8

The method of claim 1 wherein said silicon alkoxide is of the formula R x Si(OR) 4-x , wherein R is an alkyl of 1-4 carbon atoms, an aryl, an alkenyl or an alkynyl and x is 1.

Claim 9

The method of claim 2 wherein said silicon alkoxide is of the formula R x Si(OR) 4-x , wherein R is an alkyl of 1-4 carbon atoms, an aryl, an alkenyl or an alkynyl and x is 1.

Claim 10

The method of claim 3 wherein said silicon alkoxide is of the formula R x Si(OR) 4-x , wherein R is an alkyl of 1-4 carbon atoms, an aryl, an alkenyl or an alkynyl and x is 1.

Claim 11

The method of claim 1 wherein said substrate is an electronic device.

Claim 12

The method of claim 2 wherein said substrate is an electronic device.

Claim 13

The method of claim 3 wherein said substrate is an electronic device.

Claim 14

The method of claim 4 wherein said substrate is an electronic device.

Claim 15

The method of claim 7 wherein said substrate is an electronic device.

Claim 16

The method of claim 1 wherein a ceramic oxide precursor is additionally present in said solution.

Claim 17

The method of claim 15 wherein said ceramic oxide precursor is a composition comprising an element selected from the group consisting of titanium, zirconium, aluminum, tantalum, vanadium, niobium, boron and phosphorous with at least one hydrolyzable substituent.

Claim 18

The method of claim 16 wherein the hydrolyzable substituent is selected from the group consisting of alkoxy or acyloxy.

Claim 19

The method of claim 2 wherein a ceramic oxide precursor is additionally present in said solution, said ceramic oxide precursor comprising an element selected from the group consisting of titanium, zirconium, aluminum, tantalum, vanadium, niobium, boron and phosphorous with at least one hydrolyzable substituent.

Claim 20

The method of claim 18 wherein said hydrolyzable substituent is selected from the group consisting of alkoxy or acyloxy.

Claim 21

The method of claim 3 wherein a ceramic oxide precursor is additionally present in said solution, said ceramic oxide precursor comprising an element selected from the group consisting of titanium, zirconium, aluminum, tantalum, vanadium, niobium, boron and phosphorous with at least one hydrolyzable substituent.

Claim 22

The method of claim 20 wherein said hydrolyzable substituent is selected from the group consisting of alkoxy or acyloxy.

Claim 23

The method of claim 4 wherein a ceramic oxide precursor is additionally present in said solution, said ceramic oxide precursor comprising an element selected from the group consisting of titanium, zirconium, aluminum, tantalum, vanadium, niobium, boron and phosphorous with at least one hydrolyzable substituent.

Claim 24

The method of claim 22 wherein said hydrolyzable substituent is selected from the group consisting of alkoxy or acyloxy.

Claim 25

The method of claim 7 wherein a ceramic oxide precursor is additionally present in said solution, said ceramic oxide precursor comprising an element selected from the group consisting of titanium, zirconium, aluminum, tantalum, vanadium, niobium, boron and phosphorous with at least one hydrolyzable substituent.

Claim 26

The method of claim 24 wherein said hydrolyzable substituent is selected from the group consisting of alkoxy or acyloxy.

Claim 27

The method of claim 1 wherein said solution is coated onto said substrate by spray coating, dip coating, flow coating or spin coating.

Claim 28

The method of claim 1 wherein said ceramification is also carried out in the presence of water vapor.

Claim 29

The method of claim 1 wherein said ceramification is carried out at a temperature of about 200° C.

Claim 30

The method of claim 1 wherein said ozone is present in the range of from about 0.01 to about 10 weight percent.

Claim 31

The method of claim 1 wherein said ozone is generated by a source of UV light.

Claim 32

The method of claim 1 wherein said ozone is generated by an ozone generator.

Claim 33

The method of claim 1 wherein the substrate is an indium tin oxide containing electronic device.

Claim 34

The method of claim 2 wherein the substrate is an indium tin oxide containing electronic device.

Claim 35

The method of claim 3 wherein the substrate is an indium tin oxide containing electronic device.

Claim 36

The article produced by the process of claim 32.

Claim 37

The article produced by the process of claim 33.

Claim 38

The article produced by the process of claim 34.