US5318652A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Wafer bonding enhancement technique
Assignee: Honeywell Inc
•
Filing: 1992-12-21
•
Granted: 1994-06-07
•
Expires: 2012-12-21
Abstract
Abstract Low temperature wafer bonding process enhancement makes a wafer surface hydrophobic, preparing it with a buffered oxide etchant and then exposing it to H 2 O 2 before thermoelectric bonding. Has particular application to diaphragm-based pressure sensor construction.
Inventors
- 👤 Robert D. Horning
- 👤 Thomas G. Stratton
- 👤 Deidrich J. Saathoff
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 08:10
CPC Classifications
B; B81; B81C; B81C1/00; B81C1/00015; B81C1/00134; B81C1/00182; G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0042; G01L9/0072; G01L9/0073; H; H10; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; B81B; B81B2201/00; B81B2201/02; B81B2201/0292; B81B2203/00; B81B2203/01; B81B2203/0127
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
75 words
An enhancement to low temperature bonding processes for bonding the surfaces of two wafers that makes at least one of said surfaces hydrophobic, comprising the steps of: a) dipping at least one of the wafers in a buffered oxide etch, and rinsing off the etchant, then b) dipping the same wafer in an aqueous hydroxide and H 2 O 2 solution, and rinsing this solution away, and c) then contacting the wafers for thermoelectric bonding.
Claim 2
Dependent Claim
75 words
An enhancement to low temperature bonding processes for bonding the surfaces of two wafers that makes at least one of said surfaces hydrophobic, comprising the steps of: a) dipping at least one of the wafers in a buffered oxide etch, and rinsing off the etchant, then b) dipping the same wafer in an aqueous hydroxide and H 2 O 2 solution, and rinsing this solution away, and c) then contacting the wafers for thermoelectric bonding.
Claim 3
Dependent Claim
24 words
An enhancement to bonding processes as set forth in claim 1, further comprising between steps "b" and "c" creating a vacuum between the wafers.
Claim 4
Dependent Claim
36 words
An enhancement to bonding processes as set forth in claim 1 wherein a layer of glass of between 1000 Å and 5 Microns is extant at least one of said wafers' surfaces prior to step "a".
Claim 5
Dependent Claim
13 words
A process as set forth in claim 3 wherein said layer is Pyrex.
Claim 6
Dependent Claim
25 words
A process as set forth in claim 1 wherein the Buffered Oxide Etch part of step "a" is on the order of 15 seconds long.
Claim 7
Dependent Claim
17 words
A process as set forth in claim 1 wherein the rinse steps are done in deionized water.
Claim 8
Dependent Claim
19 words
A process as set forth in claim 1 wherein said buffered oxide etch is a 10% HF buffered solution.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-06 | 1997-12-06 | 1998-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-06 | 2001-12-06 | 2002-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-06 | 2005-12-06 | 2006-06-07 | $7700.00 | Window Closed / Lapsed |