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US5317302A
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Diamond thermistor
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1992-09-16
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Granted: 1994-05-31
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Expires: 2012-09-16
Abstract
Abstract A diamond thermistor having a pair of diamond contact regions having a low resistance formed on a temperature sensing diamond substrate. The formation of the diamond contact regions is carried out by depositing a diamond film using a carbon compound gas and a dopant gas and etching the diamond film to leave the contact regions by an etchant including fluorine or oxygen.
Inventors
- 👤 Shunpei Yamazaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:28
CPC Classifications
H; H01; H01C; H01C17/00; H01C17/003; H01C17/06; H01C17/075; H01C17/08; H01C7/00; H01C7/04; H01C7/041
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
38 words
A diamond thermistor comprising: a diamond layer; a pair of impurity doped diamond layers formed on said diamond layer and spaced apart from one another; and a pair of electrodes respectively formed on said impurity doped diamond layers.
Claim 2
Dependent Claim
38 words
A diamond thermistor comprising: a diamond layer; a pair of impurity doped diamond layers formed on said diamond layer and spaced apart from one another; and a pair of electrodes respectively formed on said impurity doped diamond layers.
Claim 3
Dependent Claim
17 words
The diamond thermistor according to claim 1 wherein said diamond layer has a substantially intrinsic conductivity type.
Claim 4
Dependent Claim
45 words
The diamond thermistor according to claim 2 wherein said diamond layer is doped with an impurity selected from the group consisting of B, Zn, P, N, As, S, O and Se at a concentration with a range of 1×10 15 -1×10 17 atoms/cm 3 .
Claim 5
Dependent Claim
17 words
The diamond thermistor according to claim 1 wherein said impurity doped diamond layers are doped with boron.
Claim 6
Dependent Claim
22 words
The diamond thermistor according to claim 1 wherein said electrodes comprise a material selected from the group consisting of titanium and tungsten.
Claim 7
Dependent Claim
63 words
A diamond thermistor comprising: a substrate; a first diamond layer having a substantially intrinsic conductivity type formed on said substrate; a pair of impurity doped second diamond layers formed on said first diamond layers, said pair spaced apart from one another so that a temperature sensing region is defined therebetween; and a pair of electrodes formed on said pair of second diamond layers.
Claim 8
Dependent Claim
63 words
A diamond thermistor comprising: a substrate; a first diamond layer having a substantially intrinsic conductivity type formed on said substrate; a pair of impurity doped second diamond layers formed on said first diamond layers, said pair spaced apart from one another so that a temperature sensing region is defined therebetween; and a pair of electrodes formed on said pair of second diamond layers.
Claim 9
Dependent Claim
45 words
The diamond thermistor according to claim 6 wherein said first diamond is doped with an impurity selected from the group consisting of B, Zn, P, N, As, S, O and Se at a concentration with a range of 1×10 15 -1×10 17 atoms/cm 3 .
Claim 10
Dependent Claim
12 words
The diamond thermistor according to claim 25 wherein said impurity is boron.
Claim 11
Dependent Claim
20 words
The diamond thermistor of claim 24 wherein said substrate is a silicon substrate having a silicon nitride layer formed thereon.
Claim 12
Dependent Claim
22 words
The diamond thermistor according to claim 6 wherein said electrodes comprise a material selected from the group consisting of titanium and tungsten.
Claim 13
Dependent Claim
53 words
A diamond thermistor comprising: a diamond substrate; a pair of impurity doped diamond layers formed with respect to said substrate; a temperature sensing region disposed between said diamond layers; and a pair of electrodes respectively formed on said diamond layers, wherein said temperature sensing region is formed at a projection of said substrate.
Claim 14
Dependent Claim
53 words
A diamond thermistor comprising: a diamond substrate; a pair of impurity doped diamond layers formed with respect to said substrate; a temperature sensing region disposed between said diamond layers; and a pair of electrodes respectively formed on said diamond layers, wherein said temperature sensing region is formed at a projection of said substrate.
Claim 15
Dependent Claim
21 words
The diamond thermistor of claim 1 wherein a temperature sensing region is defined between said pair of impurity doped diamond regions.
Claim 16
Dependent Claim
24 words
A diamond thermistor comprising: a temperature sensing substantially intrinsic diamond layer; and a pair of spaced apart electrodes formed directly on said diamond layer.
Claim 17
Dependent Claim
24 words
A diamond thermistor comprising: a temperature sensing substantially intrinsic diamond layer; and a pair of spaced apart electrodes formed directly on said diamond layer.
References Cited (Backward Citations)
US3832668A
Cited
US4806900A
Cited
US4886571A
Cited
US4957591A
Cited
US5081438A
Cited
US5089802A
Cited
US5252498A
Cited
US5144380A
Cited
US5066938A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-30 | 1997-11-29 | 1998-05-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-30 | 2001-11-29 | 2002-05-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-30 | 2005-11-29 | 2006-05-31 | $7700.00 | Window Closed / Lapsed |