Thermistor and its preparation

Claim 2

A thermistor comprising a temperature detecting part that includes: a temperature sensing part made of a vapor phase deposited semiconductive diamond film; a metal electrode layer formed on one surface of the semiconductive diamond film; at least one lead wire connected with he metal electrode layer; and a substrate containing an insulative diamond film on a second surface of the semiconductive diamond film; wherein the vapor phase deposited diamond constitutes at least 50% of a total volume o the temperature sensing part, the metal electrode layer and the substrate.

Claim 3

The thermistor according to claim 1, wherein the temperature detecting part further comprises at least one element selected from the group consisting of a substrate on the other surface of the semiconductive diamond film, a protective film for protecting the semiconductive diamond film, a covering material for covering the thermistor, and an adhesive for connecting the lead wire with the electrode layer and wherein 100% by volume of the temperature sensing part, 0 to 100% by volume of the substrate and 0 to 100% by volume of the protective film are made of the vapor phase deposited diamond provided that at least 50% of a total volume of the temperature sensing part, the metal electrode layer, the substrate, the protective film, the covering material and the adhesive consists of the vapor phase deposited diamond.

Claim 4

The thermistor according to claim 1, wherein at least 95% of the total volume of the temperature sensing part and the metal electrode layer consists of the vapor phase deposited diamond.

Claim 5

The thermistor according to claim 1, wherein the insulative diamond film has at least two order higher resistance than that of the semiconductive diamond film.

Claim 6

The thermistor according to claim 1, a total thickness of the semiconductive diamond film and the insulative diamond film is from 50 μm to 1 mm.

Claim 7

The thermistor according to claim 1, wherein the diamond film has an area of 0.2 mm×0.3 mm to 1.5 mm×3.0 mm.

Claim 8

The thermistor according to claim 1, wherein the semiconductive diamond film contains at least one dopant selected from the group consisting of boron, lithium, nitrogen, phosphorus, sulfur, chlorine, arsenic and selenium.

Claim 9

A method of preparing the thermistor of claim 1, which comprises forming a diamond film on a substrate other than diamond by a vapor phase deposition, then removing at least a part of the substrate.

Claim 10

The method according to claim 8, wherein the substrate is made of at least one material selected from the group consisting of a single substance of B, Al, Si, Ti, V, Zr, Nb, Mo, Hf, Ta and W, and their oxide, carbide, nitride, boride and carbonitride.