US4276535A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thermistor
Assignee: Panasonic Holdings Corp
•
Filing: 1980-02-27
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Granted: 1981-06-30
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Expires: 2000-02-27
Abstract
Abstract A high performance, precision thermistor comprising a temperature sensitive resistor in the form of a thin, uniform layer of silicon carbide, deposited on a base support by sputtering, and electrode means attached to the temperature sensitive resistor in electrically connected relation to the temperature sensitive resistor.
Inventors
- 👤 Tsuneo Mitsuyu
- 👤 Kiyotaka Wasa
- 👤 Shigeru Hayakawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 04:34
CPC Classifications
H; H01; H01C; H01C7/00; H01C7/04; H01C7/041; H01C7/042; H01C7/048
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
39 words
A thermistor comprising a base support, a temperature sensitive resistance layer of silicon carbide applied by sputtering deposition on one surface of said base support, and electrode means electrically connected to said temperature sensitive resistance layer of silicon carbide.
Claim 2
Dependent Claim
39 words
A thermistor comprising a base support, a temperature sensitive resistance layer of silicon carbide applied by sputtering deposition on one surface of said base support, and electrode means electrically connected to said temperature sensitive resistance layer of silicon carbide.
Claim 3
Dependent Claim
17 words
A thermistor as claimed in claim 1, wherein said base support is made of electrically insulating material.
Claim 4
Dependent Claim
26 words
A thermistor as claimed in claim 1, further comprising a layer of electrically insulating material positioned between the temperature sensitive resistance layer and the base support.
Claim 5
Dependent Claim
17 words
A thermistor as claimed in claim 3, wherein said base support is made of electrically conductive material.
Claim 6
Dependent Claim
15 words
A thermistor as claimed in claim 4, wherein said electrically conductive material is a metal.
Claim 7
Dependent Claim
15 words
A thermistor as claimed in claim 4, wherein said electrically conductive material is a semiconductor.
Claim 8
Dependent Claim
18 words
A thermistor as claimed in claim 1, wherein said electrode means is constituted by first and second electrodes.
Claim 9
Dependent Claim
25 words
A thermistor as claimed in claim 7, wherein said first and second electrodes are positioned between the base support and the temperature sensitive resistance layer.
Claim 10
Dependent Claim
30 words
A thermistor as claimed in claim 7, wherein said first and second electrodes are positioned on an outer surface of the temperature sensitive resistance layer remote from the base support.
Claim 11
Dependent Claim
65 words
A thermistor as claimed in claim 1, wherein said electrode means is constituted by one electrode positioned on an outer surface of the temperature sensitive resistance layer remote from the base support, and wherein said base support is made of an electrically conductive material and concurrently serves as a counter electrode cooperative with said electrode on the outer surface of the temperature sensitive resistance layer.
Claim 12
Dependent Claim
12 words
A thermistor as claimed in claim 6, wherein said semiconductor is silicon.
Claim 13
Dependent Claim
39 words
A thermistor as claimed in claim 3, wherein said base support is made of electrically conductive material and wherein said electrically insulating layer is made of a material selected from the group consisting of silicon oxides and silicon nitrides.
Claim 14
Dependent Claim
22 words
A thermistor as claimed in claim 1 wherein said silicon carbide layer has a thickness within the range of from 1-10 μm.
Claim 15
Dependent Claim
67 words
A thermistor as claimed in claim 1, said sputtering deposition is conducted by an rf-sputtering of silicon carbide target wherein a temperature of said base support is kept 600° to 700° C., a deposition rate of said temperature sensitive resistance layer of silicon carbide is ranged from 0.1 to 10 μm/hr, and a sputtering gas pressure is ranged from 1×10 -1 to 1×10 -1 Torr of argon.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-06-29 | 1984-12-29 | 1985-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-06-29 | 1988-12-29 | 1989-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-06-29 | 1992-12-29 | 1993-06-30 | $7700.00 | Window Closed / Lapsed |