US3622901A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Negative-temperature-coefficient resistors in the form of thin layers and method of manufacturing the same
Assignee: US Philips Corp
•
Filing: 1968-08-06
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Granted: 1971-11-23
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Expires: 1988-08-06
Abstract
Abstract A negative-temperature-coefficient resistor formed by applying a thin semiconductive silicon carbide layer to a substrate.
Inventors
- 👤 Jean Paul Ledran
- 👤 Paul Guiochon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 16:22
CPC Classifications
H; H01; H01C; H01C17/00; H01C17/06; H01C17/075; H01C17/12; H01C7/00; H01C7/04; H01C7/041; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49082; Y10T29/49085; Y10T29/49099
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
42 words
A resistor having a negative-temperature coefficient in the form of a thin layer on a substrate characterized in that the resistor consists of silicon nitride, doped with an element which eliminates the dielectric properties of the silicon nitride and renders it semiconductive.
Claim 2
Dependent Claim
42 words
A resistor having a negative-temperature coefficient in the form of a thin layer on a substrate characterized in that the resistor consists of silicon nitride, doped with an element which eliminates the dielectric properties of the silicon nitride and renders it semiconductive.
Claim 3
Dependent Claim
10 words
A resistor of claim 1, wherein the dopant is aluminum.
Claim 4
Dependent Claim
26 words
A method of forming a negative-temperatures-cofficient resistor of claim 1 comprising depositing by cathode sputtering a thin layer of a doped silicon nitride on a substrate.
Claim 5
Dependent Claim
13 words
The method of claim 3 wherein the silicon nitride is doped with aluminum.
Claim 6
Dependent Claim
22 words
An electric element having at least one resistor consisting of a silicon nitride layer containing an impurity which renders said layer conductive.
Claim 7
Dependent Claim
22 words
An electric element having at least one resistor consisting of a silicon nitride layer containing an impurity which renders said layer conductive.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1974-11-22 | 1975-05-24 | 1975-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1978-11-22 | 1979-05-24 | 1979-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1982-11-22 | 1983-05-24 | 1983-11-23 | $7700.00 | Window Closed / Lapsed |