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Patent US5312775A successfully refreshed from Google Patents.
US5312775A
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US
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Method of manufacturing semiconductor device having multilayer interconnection structure
Assignee: Renesas Electronics Corp
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Filing: 1993-01-26
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Granted: 1994-05-17
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Expires: 2013-01-26
Abstract
Abstract A semiconductor device having a multilayer interconnection structure includes a tungsten plug buried in a contact hole formed in an interlayer insulating film covering first aluminum interconnection with a first titanium film and a first titanium nitride film interposed therebetween, and second aluminum interconnection formed thereon with a second titanium film and a second titanium nitride film interposed therebetween. According to this structure, remaining particles of an alterated layer of aluminum formed on the surface of the first aluminum interconnection are removed, and the first aluminum interconnection reacts with the first titanium film to form an intermetallic compound, so that mixing of the interface between them is carried out. Coverage of the contact hole is improved by burying the tungsten plug.
Inventors
- 👤 Hiroyuki Fujii
- 👤 Shigeru Harada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:45
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; H10W20/031; H10W20/032; H10W20/033; H10W20/047; H10W20/049; H10W20/056; H10W20/083; H10W20/40; H10W20/41; H10W20/42; H10W20/425; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
158 words
A method of manufacturing a semiconductor device having a multilayer interconnection structure, comprising the steps of: forming first aluminum interconnection; depositing an insulating film to cover said first aluminum interconnection to form an interlayer insulating film; opening a contact hole whose bottom surface is the surface of said first aluminum interconnection in a predetermined position in said interlayer insulating film; forming a first titanium film on the surface of said interlayer insulating film and on the inner surface of said contact hole; forming a first titanium compound film on the surface of said first titanium film; burying tungsten in said contact hole with said first titanium film and said first titanium compound film interposed therebetween to form a tungsten plug; forming a second titanium film on said tungsten plug and on said first titanium compound film; forming a second titanium compound film on said second titanium film; and forming second aluminum interconnection on said second titanium compound film.
Claim 2
Independent Claim
158 words
A method of manufacturing a semiconductor device having a multilayer interconnection structure, comprising the steps of: forming first aluminum interconnection; depositing an insulating film to cover said first aluminum interconnection to form an interlayer insulating film; opening a contact hole whose bottom surface is the surface of said first aluminum interconnection in a predetermined position in said interlayer insulating film; forming a first titanium film on the surface of said interlayer insulating film and on the inner surface of said contact hole; forming a first titanium compound film on the surface of said first titanium film; burying tungsten in said contact hole with said first titanium film and said first titanium compound film interposed therebetween to form a tungsten plug; forming a second titanium film on said tungsten plug and on said first titanium compound film; forming a second titanium compound film on said second titanium film; and forming second aluminum interconnection on said second titanium compound film.
Claim 3
Dependent Claim
54 words
The method of manufacturing a semiconductor device having a multilayer interconnection structure according to claim 1, further comprising the step of, after said step of opening said contact hole and before said step of forming said first titanium film, carrying out sputter etching on the inner surface of said contact hole using argon ions.
Claim 4
Dependent Claim
33 words
The method of manufacturing a semiconductor device having a multilayer interconnection structure according to claim 1, wherein said step of forming said first titanium film is carried out by depositing titanium by sputtering.
Claim 5
Dependent Claim
45 words
The method of manufacturing a semiconductor device having a multilayer interconnection structure according to claim 1, wherein said step of forming said first titanium compound film is carried out by a reactive sputtering process using a titanium target in an atmosphere of argon and nitrogen.
Claim 6
Dependent Claim
66 words
The method of manufacturing a semiconductor device having a multilayer interconnection structure according to claim 1, wherein said step of burying said tungsten plug includes the steps of: depositing a tungsten film on the whole surface of said first titanium compound film by a CVD process; and etching back the whole surface of said tungsten film to leave said tungsten plug buried inside said contact hole.
Claim 7
Dependent Claim
30 words
The method of manufacturing a semiconductor device having a multilayer interconnection structure according to claim 1, wherein said step of forming said second titanium film is carried out by sputtering.
Claim 8
Dependent Claim
45 words
The method of manufacturing a semiconductor device having a multilayer interconnection structure according to claim 1, wherein said step of forming said second titanium compound film is carried out by a reactive sputtering process using a titanium target in an atmosphere of argon and nitrogen.
Claim 9
Dependent Claim
35 words
The method of manufacturing a semiconductor device having a multilayer interconnection structure according to claim 1, wherein said step of forming said second aluminum interconnection is carried out by depositing an Al-Si-Cu film by sputtering.
Claim 10
Dependent Claim
55 words
The method of manufacturing a semiconductor device having a multilayer interconnection structure according to claim 1, further comprising the step of patterning said first titanium film, said first titanium compound film, said second titanium film, said second titanium compound film, and said second aluminum interconnection by photolithography and etching to form a desired interconnection pattern.
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-05-16 | 1997-11-15 | 1998-05-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-16 | 2001-11-15 | 2002-05-17 | $3760.00 | Window Closed / Lapsed |
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