Semiconductor integrated circuit

Abstract

Abstract PURPOSE:To prevent a cross section by migration of an aluminum layer by using wirings having two layer structure formed by superposing the aluminum layer and a tungsten silicide layer as multilayer interconnections for a semiconductor integrated circuit. CONSTITUTION:An silicon oxide film 2 and an N-type diffusion region 3 are shaped onto the surface of a P-type silicon substrate 1, a PSG film 4 is deposited, and the upper section of the region 3 is etched selectively to form a first opening section. A tungsten silicide layer 5 and an aluminum layer 6 are deposited onto the surface in succession, and lower layer wirings having two layer structure connect ed to the N-type diffusion region in the first opening section are shaped. An aluminum layer 8 and a tungsten silicide layer 9 are deposited successively onto the surface including a second opening section, and upper layer wirings having two layer structure connected to the lower layer wiring in the second opening section are formed. Molybdenum silicide may be employed in place of tungsten silicide.

Inventors

• 👤 Shigeru Takahashi

Bibliographic Details