Patent US5310452A successfully refreshed from Google Patents.
US5310452A
Expired / Lapsed
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Plasma process apparatus and plasma processing method
Assignee: Fuji Electric Co Ltd
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Filing: 1992-07-20
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Granted: 1994-05-10
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Expires: 2012-07-20
Abstract
Abstract Provided is a plasma processing apparatus and method which has a plasma generating chamber into which gas is introduced and microwaves are transmitted, thereby generating plasma. The plasma is introduced into a processing chamber, in which a semiconductor substrate to be processed resides. An RF generator and DC generator are mixed together and are synchronized with the microwaves, such that they are applied to the substrate at the same times the microwaves act upon the gas to form plasma. Thus, variance of the DC bias and RF bias can be independently controlled, and damage to the substrate is reduced. In another embodiment, an RF bias voltage modulation circuit is used to shape the RF waveform in accordance with predetermined patterns.
Inventors
- 👤 Masahiko Doki
- 👤 Kiyoshi Ooiwa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 08:06
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32357; H05; H05H; H05H1/00; H05H1/24; H05H1/46
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
124 words
A method of processing a semiconductor device using microwave-generated plasma, comprising the steps of (a) supplying a gas to an evacuated plasma-generating chamber; (b) supplying pulsed microwave to said evacuated plasma-generating chamber; (c) providing a magnetic field in said plasma-generating chamber so as to generate a plasma due to resonance effects between said gas and said microwaves, wherein said magnetic field guides said plasma from said plasma-generating chamber into an evacuated processing chamber; (d) providing a supported substrate in said processing chamber with one of its surfaces arranged for thin-film formation or etching using said plasma; (e) supplying an RF bias voltage such that its magnitude varies with time during each microwave pulse; and (f) synchronizing said RF bias voltage with said microwave pulses.
Claim 2
Independent Claim
124 words
A method of processing a semiconductor device using microwave-generated plasma, comprising the steps of (a) supplying a gas to an evacuated plasma-generating chamber; (b) supplying pulsed microwave to said evacuated plasma-generating chamber; (c) providing a magnetic field in said plasma-generating chamber so as to generate a plasma due to resonance effects between said gas and said microwaves, wherein said magnetic field guides said plasma from said plasma-generating chamber into an evacuated processing chamber; (d) providing a supported substrate in said processing chamber with one of its surfaces arranged for thin-film formation or etching using said plasma; (e) supplying an RF bias voltage such that its magnitude varies with time during each microwave pulse; and (f) synchronizing said RF bias voltage with said microwave pulses.
Claim 3
Independent Claim
132 words
A method of plasma processing, for acting upon a substrate, comprising the steps of: (a) providing a magnetic field in an area; (b) providing a gas within said area; (c) coupling pulses of microwave energy into said area; (d) coupling an RF bias voltage to a substrate to be acted upon by a plasma resulting from the interaction of said magnetic field and microwave energy upon said gas; (e) coupling a DC bias voltage to said substrate; and (f) independently controlling the respective amplitudes of said RF and DC bias voltages, and coupling said independently controlled RF and DC bias voltages into said area only during periods when said pulses of microwave energy have been coupled into said are whereby the RF bias level may be determined independently of composite RF/DC biasing.
Claim 4
Independent Claim
132 words
A method of plasma processing, for acting upon a substrate, comprising the steps of: (a) providing a magnetic field in an area; (b) providing a gas within said area; (c) coupling pulses of microwave energy into said area; (d) coupling an RF bias voltage to a substrate to be acted upon by a plasma resulting from the interaction of said magnetic field and microwave energy upon said gas; (e) coupling a DC bias voltage to said substrate; and (f) independently controlling the respective amplitudes of said RF and DC bias voltages, and coupling said independently controlled RF and DC bias voltages into said area only during periods when said pulses of microwave energy have been coupled into said are whereby the RF bias level may be determined independently of composite RF/DC biasing.
Claim 5
Independent Claim
99 words
A method of plasma processing, for acting upon a substrate, comprising the steps of (a) providing a magnetic field in an area; (b) providing a gas within said area; (c) coupling pulses of microwave energy into said area; (d) modulating an RF bias voltage in accordance with modulation pattern; (e) coupling said RF bias voltage to a substrate to be acted upon by a plasma resulting from the interaction of said magnetic field and microwave energy upon said gas; (f) controlling said modulated RF bias voltage so as to limit its amplitude in periods between pulses of microwave energy.
Claim 6
Independent Claim
99 words
A method of plasma processing, for acting upon a substrate, comprising the steps of (a) providing a magnetic field in an area; (b) providing a gas within said area; (c) coupling pulses of microwave energy into said area; (d) modulating an RF bias voltage in accordance with modulation pattern; (e) coupling said RF bias voltage to a substrate to be acted upon by a plasma resulting from the interaction of said magnetic field and microwave energy upon said gas; (f) controlling said modulated RF bias voltage so as to limit its amplitude in periods between pulses of microwave energy.
Claim 7
Dependent Claim
23 words
A method of plasma processing as set forth in claim 3 wherein the modulation pattern comprises a base portion and a peak portion.
Claim 8
Dependent Claim
25 words
A method of plasma processing as set forth in claim 3 wherein the modulation pattern rises in an inclined manner and gradually changes with time.
References Cited (Backward Citations)
US4401054A
Cited
EP0145015A2
Cited
EP0171949A2
Cited
US4795529A
Cited
JPS63301497A
Cited
US4863549A
Cited
US4891118A
Cited
US4970435A
Cited
US4968374A
Cited
US4960073A
Cited
US4985114A
Cited
EP0395415A2
Cited
US5160397A
Cited
JPH02297929A
Cited
JPH02312227A
Cited
US5170098A
Cited
JPH03155620A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-09 | 1997-11-08 | 1998-05-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-09 | 2001-11-08 | 2002-05-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-09 | 2005-11-08 | 2006-05-10 | $7700.00 | Window Closed / Lapsed |