US4970435A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma processing apparatus
Assignee: Tokyo Electron Ltd
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Filing: 1988-12-08
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Granted: 1990-11-13
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Expires: 2008-12-08
Abstract
Abstract In a plasma processing apparatus of this invention, a reaction chamber opposed to a plasma generating chmaber is entirely opened at its one side surface opposing the obect to be processed, and an interval between the one side surface and the other side surface is set to be an integer multiple of a 1/2 wavelength of the microwave. A microwave oscillated by a microwave oscillator and supplied to a vacuum vessel can be converted into a plasma energy with high conversion efficiency, thereby minimizing a reflected wave.
Inventors
- 👤 Susumu Tanaka
- 👤 Yuki Hamada
- 👤 Yasushi Sasaki
- 👤 Yutaka Shimada
- 👤 Susumu Fukuoka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 16:48
CPC Classifications
H; H05; H05H; H05H1/00; H05H1/02; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32357
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
128 words
A plasma processing apparatus in which a microwave is radiated on a reaction gas supplied into a plasma generating chamber to generate plasma, and predetermined processing is performed for an object placed in the reaction chamber for plasma processings, wherein the plasma generating chamber opposed to the reaction chamber is provided with an electrical ground connection at the outer periphery thereof and which has a first side face which is entirely open and faces a plane in which the object is placed, and a second side face which is located opposite to the first side face and from which the microwave is supplied, and wherein the distance between the first and second side faces is set to be an integer multiple of a 1/2 wavelength of the microwave.
Claim 2
Dependent Claim
128 words
A plasma processing apparatus in which a microwave is radiated on a reaction gas supplied into a plasma generating chamber to generate plasma, and predetermined processing is performed for an object placed in the reaction chamber for plasma processings, wherein the plasma generating chamber opposed to the reaction chamber is provided with an electrical ground connection at the outer periphery thereof and which has a first side face which is entirely open and faces a plane in which the object is placed, and a second side face which is located opposite to the first side face and from which the microwave is supplied, and wherein the distance between the first and second side faces is set to be an integer multiple of a 1/2 wavelength of the microwave.
Claim 3
Dependent Claim
45 words
An apparatus according to claim 1, wherein a current flowing through a susceptor on which said object to be processed is mounted is detected, and a tuner located between a microwave supply system and a plasma generating system is tuned to maximize the susceptor current.
Claim 4
Dependent Claim
48 words
An apparatus according to claim 1, wherein said reaction chamber comprises a reaction gas supply tube having at least two gas injection tubes for injecting a reaction gas to different portions, said gas injection tubes being partially located near a mounting position of said object to be processed.
Claim 5
Dependent Claim
48 words
An apparatus according to claim 1, wherein resonance adjusting means for varying and adjusting a transmission path length of a microwave to set a resonant state is incorporated in microwave transmitting means for transmitting a microwave generated by a microwave generating chamber source to said plasma generating chamber.
Claim 6
Dependent Claim
27 words
An apparatus according to claim 1, wherein a distance between the first and second side faces is an integer multiple of 1/2 the wavelength of the microwave.
Claim 7
Dependent Claim
29 words
An apparatus as in claim 1 further comprising: a wavelength adjusting means connected to a waveguide immediately before a discharge chamber for adjusting a microwave to a predetermined wavelength.
Claim 8
Dependent Claim
73 words
An apparatus according to claim 5, further comprising: a tuner located in a microwave transmission path between a microwave generating unit and a vacuum vessel; current detecting means for applying a bias voltage to a susceptor of said vacuum vessel and detecting a current flowing through said susceptor; and control means for tuning said tuner to maximize the detected susceptor current, wherein said vacuum vessel is automatically matched with said microwave transmission path.
Claim 9
Dependent Claim
21 words
An apparatus according to claim 7, wherein said microwave generating unit is connected to said vacuum vessel through a tapered waveguide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-11-12 | 1994-05-14 | 1994-11-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-11-12 | 1998-05-14 | 1998-11-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-11-12 | 2002-05-14 | 2002-11-13 | $7700.00 | Window Closed / Lapsed |