US5170098A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Plasma processing method and apparatus for use in carrying out the same
Assignee: Panasonic Holdings Corp
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Filing: 1992-05-15
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Granted: 1992-12-08
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Expires: 2012-05-15
Abstract
Abstract A plasma processing apparatus is provided which includes a plasma reaction chamber in which plasma is generated for processing, an RF power supply for feeding RF power into the plasma reaction chamber through an impedance matching circuit, and a feedback mechanism for maintaining plasma impedance within the plasma reaction chamber substantially constant, the feedback mechanism containing the impedance matching circuit which also functions as impedance sensing means. Also provided is a plasma processing method including the step of etching or depositing films by using plasma, while maintaining plasma impedance substantially constant by applying feedback to at least one selected from the group consisting of gas pressure in the plasma reaction chamber, rate of gas flow into the plasma reaction chamber, magnetic field, microwave power, and RF power.
Inventors
- 👤 Robert W. Dutton
- 👤 Masafumi Kubota
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 14:08
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0402; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; H01J37/32431; H01J37/3266; H01J37/32678; H01J37/32917; H01J37/32935; H01J37/3299; H01J2237/00; H01J2237/32; H01J2237/33; H01J2237/334; H01J2237/3341
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
95 words
A plasma processing apparatus comprising a plasma reaction chamber in which plasma is generated for processing, an RF power supply for feeding RF power into the plasma reaction chamber through an impedance matching circuit by which a maximum amount of RF power is supplied to the plasma within the plasma reaction chamber, and a feedback mechanism for setting feedback parameter values to enable the plasma impedance to return to an initial value when a change occurs in the plasma impedance, the feedback mechanism containing the impedance matching circuit which also functions as impedance sensing means.
Claim 2
Dependent Claim
95 words
A plasma processing apparatus comprising a plasma reaction chamber in which plasma is generated for processing, an RF power supply for feeding RF power into the plasma reaction chamber through an impedance matching circuit by which a maximum amount of RF power is supplied to the plasma within the plasma reaction chamber, and a feedback mechanism for setting feedback parameter values to enable the plasma impedance to return to an initial value when a change occurs in the plasma impedance, the feedback mechanism containing the impedance matching circuit which also functions as impedance sensing means.
Claim 3
Dependent Claim
43 words
A plasma processing apparatus according to claim 1, wherein said apparatus has the feedback mechanism for setting feedback parameter values to enable the imaginary component of the plasma impedance to return to an initial value when a change occurs in the plasma impedance.
Claim 4
Dependent Claim
47 words
A plasma processing apparatus according to claim 1, wherein the feedback mechanism contains a feedback parameter setting circuit connected to the impedance matching circuit, at least one feedback parameter value being set in the feedback parameter setting circuit on the basis of information concerning the plasma impedance.
Claim 5
Dependent Claim
45 words
A plasma processing apparatus according to claim 3, wherein said at least one feedback parameter is selected from the group consisting of gas pressure in the plasma reaction chamber, rate of gas flow into the plasma reaction chamber, magnetic field, microwave power, and RF power.
Claim 6
Dependent Claim
29 words
A plasma processing apparatus according to claim 3, wherein the information concerning the plasma impedance is at least one capacity value of capacitors used in the impedance matching circuit.
Claim 7
Dependent Claim
24 words
A plasma processing apparatus according to claim 1, wherein the feedback mechanism directly applies feedback on the basis of information concerning the plasma impedance.
Claim 8
Dependent Claim
46 words
A plasma processing apparatus according to claim 6, wherein the feedback is applied to at least one selected from the group consisting of gas pressure in the plasma reaction chamber, rate of gas flow into the plasma reaction chamber, magnetic field, microwave power, and RF power.
Claim 9
Dependent Claim
29 words
A plasma processing apparatus according to claim 6, wherein the information concerning the plasma impedance is at least one capacity value of capacitors used in the impedance matching circuit.
Claim 10
Dependent Claim
141 words
A plasma processing method comprising the steps of providing a plasma reaction chamber in which plasma is generated for processing, an RF power supply for feeding RF power into the plasma reaction chamber through an impedance matching circuit by which a maximum amount of RF power is supplied to the plasma, and a feedback mechanism for setting feedback parameter values to enable the plasma impedance to return to an initial value when a change occurs in the plasma impedance and further comprising the steps of etching or depositing films by using plasma, while maintaining the plasma impedance substantially constant by applying feedback to at least one of the feedback parameter values selected from the group consisting of gas pressure in the plasma reaction chamber, a rate of gas flow into the plasma reaction chamber, magnetic field, microwave power, and RF power.
Claim 11
Dependent Claim
141 words
A plasma processing method comprising the steps of providing a plasma reaction chamber in which plasma is generated for processing, an RF power supply for feeding RF power into the plasma reaction chamber through an impedance matching circuit by which a maximum amount of RF power is supplied to the plasma, and a feedback mechanism for setting feedback parameter values to enable the plasma impedance to return to an initial value when a change occurs in the plasma impedance and further comprising the steps of etching or depositing films by using plasma, while maintaining the plasma impedance substantially constant by applying feedback to at least one of the feedback parameter values selected from the group consisting of gas pressure in the plasma reaction chamber, a rate of gas flow into the plasma reaction chamber, magnetic field, microwave power, and RF power.
Claim 12
Dependent Claim
20 words
A plasma processing method according to claim 9, wherein the imaginary component of the plasma impedance is maintained substantially constant.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-12-08 | 1996-06-08 | 1996-12-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-12-08 | 2000-06-08 | 2000-12-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-12-08 | 2004-06-08 | 2004-12-08 | $7700.00 | Window Closed / Lapsed |