Patent US5307304A successfully refreshed from Google Patents.
US5307304A
Expired / Lapsed
US
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Semiconductor memory device and method of operation thereof
Assignee: Hitachi Ltd
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Filing: 1991-07-31
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Granted: 1994-04-26
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Expires: 2011-07-31
Abstract
Abstract A semiconductor memory device has a plurality of memory cells in an array, into which the memory cells data is writable, and which can subsequently be read. Each memory cell has a switching element with one terminal connected to a bit line of the array another terminal connected to at least one ferroelectric capacitor, and a control terminal connected to a word line. The cell may then be operated to detect the change in polarization of the ferroelectric capacitor when a voltage is applied which is not sufficient to cause a change of state of the ferroelectric capacitor. Alternatively, a ferroelectric capacitor and a capacitor other than a ferroelectric capacitor is connected to the switching element. In a further alternative, a plurality of ferroelectric capacitors are connected to the switching element, so that different data are writable into each.
Inventors
- 👤 Ryuichi Saito
- 👤 Hidekatsu Onose
- 👤 Yutaka Kobayashi
- 👤 Michio Ohue
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:02
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/22; G11C11/56; G11C11/5657; H; H10; H10B; H10B12/00; H10B12/30; H10B53/00; G11C16/00; G11C16/02; G11C16/06; G11C16/08; G11C8/00; G11C8/14
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
141 words
A method of operating a semiconductor memory device; said semiconductor memory device having at least one memory cell, said at least one memory cell having at least one ferroelectric capacitive element; wherein said at least one ferroelectric capacitive element has first and second polarization states and is switchable therebetween by respective first and second voltages; said method comprising: applying said first voltage across said ferroelectric capacitive element, thereby to cause said ferroelectric capacitive element to be in said first state; applying a further voltage across said ferroelectric capacitive element so as to cause said ferroelectric capacitive element to change from said first state to a further state, said further voltage being different from that corresponding to said second state; and measuring the change of polarization across said at least one ferroelectric capacitive element between said first state and said further state.
Claim 2
Independent Claim
141 words
A method of operating a semiconductor memory device; said semiconductor memory device having at least one memory cell, said at least one memory cell having at least one ferroelectric capacitive element; wherein said at least one ferroelectric capacitive element has first and second polarization states and is switchable therebetween by respective first and second voltages; said method comprising: applying said first voltage across said ferroelectric capacitive element, thereby to cause said ferroelectric capacitive element to be in said first state; applying a further voltage across said ferroelectric capacitive element so as to cause said ferroelectric capacitive element to change from said first state to a further state, said further voltage being different from that corresponding to said second state; and measuring the change of polarization across said at least one ferroelectric capacitive element between said first state and said further state.
Claim 3
Dependent Claim
81 words
A method according to claim 1, wherein said at least one memory cell has a switching element having first second and control terminals, and said first terminal of said switching element is connected to a first terminal of said ferroelectric capacitive element, and said step of measuring the change in polarization across said ferroelectric capacitive element comprises applying a first signal to said control terminal of said switching element and measuring the voltage at said second terminal of said switching element.
Claim 4
Dependent Claim
128 words
A method according to claim 1, wherein said memory device has a further memory cell having at least one further ferroelectric capacitive element; and wherein said method further includes: apply a predetermined voltage across said at least one further ferroelectric capacitive element, thereby to cause said at least one further ferroelectric capacitive element to be in a predetermined state; applying said further voltage across said further ferroelectric capacitive element; measuring the change in polarization across said at least one further ferroelectric capacitive element due to said further voltage; and comparing said change in polarization of said at least one ferroelectric capacitive element and said change in polarization of said at least one further ferroelectric capacitive element, thereby to determine whether said first state corresponds to said predetermined state.
Claim 5
Dependent Claim
30 words
A method according to claim 1, further including: re-applying said first voltage across said ferroelectric capacitive element, thereby to cause said ferroelectric capacitive element to return to said first state.
Claim 6
Dependent Claim
40 words
A method according to claim 1, wherein said ferroelectric capacitive element is initially in said second state and said first voltage is such as to cause said ferroelectric capacitive element to change from said second state to said first state.
Claim 7
Independent Claim
198 words
A method of operating a semiconductor memory device, wherein a) said memory device has at least one memory cell, said at least one memory cell comprising: (i) at least one switching element having first, second and control terminals; and (ii) a plurality of capacitive elements each having a first terminal connected to said first terminal of said switching element; wherein at least one of said plurality of capacitive elements is a ferroelectric capacitive element, and at least another of said plurality of capacitive elements is other than a ferroelectric capacitive element; and b) said method comprises: maintaining constant the voltage of a second terminal of said at least another of said plurality of capacitive elements at a predetermined voltage; applying a first voltage to said second terminal of said at least one of said plurality of capacitive elements, thereby to cause said at least one of said plurality of capacitive elements to be in a first state; applying a second voltage to said second terminal of said at least one of said plurality of capacitive elements; and measuring the charge in polarization of said at least one of said plurality of capacitive elements due to said second voltage.
Claim 8
Independent Claim
198 words
A method of operating a semiconductor memory device, wherein a) said memory device has at least one memory cell, said at least one memory cell comprising: (i) at least one switching element having first, second and control terminals; and (ii) a plurality of capacitive elements each having a first terminal connected to said first terminal of said switching element; wherein at least one of said plurality of capacitive elements is a ferroelectric capacitive element, and at least another of said plurality of capacitive elements is other than a ferroelectric capacitive element; and b) said method comprises: maintaining constant the voltage of a second terminal of said at least another of said plurality of capacitive elements at a predetermined voltage; applying a first voltage to said second terminal of said at least one of said plurality of capacitive elements, thereby to cause said at least one of said plurality of capacitive elements to be in a first state; applying a second voltage to said second terminal of said at least one of said plurality of capacitive elements; and measuring the charge in polarization of said at least one of said plurality of capacitive elements due to said second voltage.
Claim 9
Dependent Claim
54 words
A method according to claim 6, wherein the measuring the change in polarization of said at least one of said plurality of capacitive elements includes applying a signal to said control terminal of said switching element, detecting the further voltage at said second terminal thereof, and comparing said further voltage with said predetermined voltage.
Claim 10
Independent Claim
195 words
A method of operating a semiconductor memory device having at least one memory cell, said at least one memory cell comprising: at least one switching element having first, second and control terminals; and a plurality of capacitive elements each having a first terminal connected to said first terminal of said switching element, characterised in that: at least two of said plurality of capacitive elements being ferroelectric capacitive elements; the method comprising: establishing respective first operating states, for each of said capacitive elements, said respective first operating states of said at least two of said plurality of capacitive elements corresponding to a respective first polarization; and selectively applying a first voltage to a second terminal of a selected at least one of said capacitive elements and a second voltage, different from said first voltage, to a second terminal of said capacitive elements other than said selected at least one of said capacitive elements, thereby to change said selected one of said capacitive elements to a second operating state corresponding to a second polarization, and to hold said capacitive elements other than said selected at least one of said capacitive elements in said respective first operating state.
Claim 11
Independent Claim
195 words
A method of operating a semiconductor memory device having at least one memory cell, said at least one memory cell comprising: at least one switching element having first, second and control terminals; and a plurality of capacitive elements each having a first terminal connected to said first terminal of said switching element, characterised in that: at least two of said plurality of capacitive elements being ferroelectric capacitive elements; the method comprising: establishing respective first operating states, for each of said capacitive elements, said respective first operating states of said at least two of said plurality of capacitive elements corresponding to a respective first polarization; and selectively applying a first voltage to a second terminal of a selected at least one of said capacitive elements and a second voltage, different from said first voltage, to a second terminal of said capacitive elements other than said selected at least one of said capacitive elements, thereby to change said selected one of said capacitive elements to a second operating state corresponding to a second polarization, and to hold said capacitive elements other than said selected at least one of said capacitive elements in said respective first operating state.
Claim 12
Dependent Claim
37 words
A method according to claim 8, wherein the polarization of said selected at least one of said capacitive elements is investigated after said at least one of said capacitive elements has been changed to said second state.
Claim 13
Dependent Claim
36 words
A method according to claim 9, wherein said polarization is investigated by applying a signal to said control terminal of said switching element, and detecting the further voltage at said second terminal of said switching element.
Claim 14
Dependent Claim
136 words
A method according to claim 9, wherein said memory device has a further memory cell having at least one further ferroelectric capacitive element, and wherein said method further includes: applying a predetermined voltage across said at least one further ferroelectric capacitive element, thereby to cause said at least one further ferroelectric capacitive element to be in a predetermined state; applying said first voltage to a terminal of said at least one further ferroelectric capacitive element; measuring the change in polarization across said at least one further ferroelectric capacitive element due to said first voltage; and comparing said change in polarization of said selected at least one of said capacitive elements and said charge in polarization of said at least one further ferroelectric capacitive element, thereby to determine whether said second state corresponds to said predetermined state.
Claim 15
Independent Claim
96 words
A method of operating a semiconductor memory device; said semiconductor memory device having a plurality of memory cells, each memory cells having at least one switching element having first, second and control terminals and at least one ferroelectric capacitive element having a first terminal connected to said first terminal of said switching element; said method comprising: controlling voltage applied to said second and control terminals of said switching element and a second terminal of said ferroelectric capacitive element such as to establish a selected one of at least three polarity states of said ferroelectric capacitive element.
Claim 16
Independent Claim
96 words
A method of operating a semiconductor memory device; said semiconductor memory device having a plurality of memory cells, each memory cells having at least one switching element having first, second and control terminals and at least one ferroelectric capacitive element having a first terminal connected to said first terminal of said switching element; said method comprising: controlling voltage applied to said second and control terminals of said switching element and a second terminal of said ferroelectric capacitive element such as to establish a selected one of at least three polarity states of said ferroelectric capacitive element.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-04-25 | 1997-10-25 | 1998-04-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-04-25 | 2001-10-25 | 2002-04-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-04-25 | 2005-10-25 | 2006-04-26 | $7700.00 | Window Closed / Lapsed |