US5300793A
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Hetero crystalline structure and semiconductor device using it
Assignee: Opnext Japan Inc
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Filing: 1993-05-19
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Granted: 1994-04-05
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Expires: 2013-05-19
Abstract
Abstract A hetero crystalline structure consisting of semiconductor materials of a zincblende-structure and wurtzite-structure. For example, formed on a semiconductor substrate having a crystal face of (100) of the zincblende structure is a semiconductor material of the wurtzite-structure in its bulk state as a film of the same zincblende-structure as the semiconductor substrate.
Inventors
- 👤 Masahiko Kondow
- 👤 Shigekazu Minagawa
- 👤 Takashi Kajimura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 09:01
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3424; H10P14/3428; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H01S5/3211; H01S5/3214; H10P14/22; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/2926; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/3224; H10P14/3228; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/3414; H10P14/3421; H01S5/04; H01S5/041; H01S5/3013
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
114 words
A hetero crystalline structure comprising: a semiconductor single crystal substrate, a crystal face of said semiconductor substrate having an atomic arrangement which exists in one crystalline structure selected from the group consisting of a zincblende-crystalline structure and a wurtzite-crystalline structure, and a semiconductor single crystal epitaxial film epitaxially grown on said crystal face semiconductor substrate and having an atomic arrangement which exists in said one crystalline structure throughout its entire thickness, from an interface with said semiconductor substrate to an interface with a material of different composition, and being made of a different material therefrom, the material of said semiconductor single crystal epitaxial film not having said one crystalline structure in its bulk state.
Claim 2
Dependent Claim
114 words
A hetero crystalline structure comprising: a semiconductor single crystal substrate, a crystal face of said semiconductor substrate having an atomic arrangement which exists in one crystalline structure selected from the group consisting of a zincblende-crystalline structure and a wurtzite-crystalline structure, and a semiconductor single crystal epitaxial film epitaxially grown on said crystal face semiconductor substrate and having an atomic arrangement which exists in said one crystalline structure throughout its entire thickness, from an interface with said semiconductor substrate to an interface with a material of different composition, and being made of a different material therefrom, the material of said semiconductor single crystal epitaxial film not having said one crystalline structure in its bulk state.
Claim 3
Dependent Claim
27 words
A hetero crystalline structure according to claim 1, wherein said semiconductor single crystal substrate has a crystalline structure of a zincblende-structure and a crystal face of (100).
Claim 4
Dependent Claim
27 words
A hetero crystalline structure according to claim 1, wherein said semiconductor single crystal substrate has a crystalline structure of a zincblende-structure and a crystal face of (110).
Claim 5
Dependent Claim
20 words
A hetero crystalline structure according to claim 1, wherein said semiconductor single crystal substrate is made of III-V compound semiconductor.
Claim 6
Dependent Claim
20 words
A hetero crystalline structure according to claim 2, wherein said semiconductor single crystal substrate is made of III-V compound semiconductor.
Claim 7
Dependent Claim
20 words
A hetero crystalline structure according to claim 3, wherein said semiconductor single crystal substrate is made of III-V compound semiconductor.
Claim 8
Dependent Claim
21 words
A hetero crystalline structure according to claim 1, wherein said semiconductor single crystal epitaxial film is made of II-VI alloy semiconductor.
Claim 9
Dependent Claim
21 words
A hetero crystalline structure according to claim 2, wherein said semiconductor single crystal epitaxial film is made of II-VI alloy semiconductor.
Claim 10
Dependent Claim
21 words
A hetero crystalline structure according to claim 3, wherein said semiconductor single crystal epitaxial film is made of II-VI alloy semiconductor.
Claim 11
Dependent Claim
33 words
A hetero crystalline structure according to claim 1, wherein said semiconductor single crystal substrate is made of III-V compound semiconductor and said semiconductor single crystal epitaxial film is made of II-VI alloy semiconductor.
Claim 12
Dependent Claim
33 words
A hetero crystalline structure according to claim 2, wherein said semiconductor single crystal substrate is made of III-V compound semiconductor and said semiconductor single crystal epitaxial film is made of II-VI alloy semiconductor.
Claim 13
Dependent Claim
33 words
A hetero crystalline structure according to claim 3, wherein said semiconductor single crystal substrate is made of III-V compound semiconductor and said semiconductor single crystal epitaxial film is made of II-VI alloy semiconductor.
Claim 14
Dependent Claim
27 words
A hetero crystalline structure according to claim 1, wherein said semiconductor single crystal substrate is made of one selected from a group consisting of GaAs and InP.
Claim 15
Dependent Claim
27 words
A hetero crystalline structure according to claim 2, wherein said semiconductor single crystal substrate is made of one selected from the group consisting of GaAs and InP.
Claim 16
Dependent Claim
27 words
A hetero crystalline structure according to claim 3, wherein said semiconductor single crystal substrate is made of one selected from a group consisting of GaAs and InP.
Claim 17
Dependent Claim
40 words
A hetero crystalline structure according to claim 1, wherein said semiconductor single crystal epitaxial film is made of a material selected from the group consisting of CdSe, GaN, AlN, CdZnS, CdSeS, InAs, InGaN, and an alloy of GaN and AlN.
Claim 18
Dependent Claim
40 words
A hetero crystalline structure according to claim 2, wherein said semiconductor single crystal epitaxial film is made of a material selected from the group consisting of CdSe, GaN, AlN, CdZnS, CdSeS, InAs, InGaN, and an alloy of GaN and AlN.
Claim 19
Dependent Claim
40 words
A hetero crystalline structure according to claim 3, wherein said semiconductor single crystal epitaxial film is made of a material selected from the group consisting of CdSe, GaN, AlN, CdZnS, CdSeS, InAs, InGaN, and an alloy of GaN and AlN.
Claim 20
Dependent Claim
34 words
A semiconductor device wherein the hetero crystalline structure of claim 1 is used, the semiconductor single crystal epitaxial film of which works as an active layer or a cladding layer of a semiconductor laser.
Claim 21
Dependent Claim
34 words
A semiconductor device wherein the hetero crystalline structure of claim 2 is used, the semiconductor single crystal epitaxial film of which works as an active layer or a cladding layer of a semiconductor laser.
Claim 22
Dependent Claim
34 words
A semiconductor device wherein the hetero crystalline structure of claim 3 is used, the semiconductor single crystal epitaxial film of which works as an active layer or a cladding layer of a semiconductor laser.
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