US4866489A
Expired / Lapsed
US
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Semiconductor device
Assignee: Panasonic Holdings Corp
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Filing: 1987-07-22
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Granted: 1989-09-12
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Expires: 2007-07-22
Abstract
Abstract A semiconductor device in which a strained-layer of super-lattice composed of two or more group II-IV semiconductors grown on an epitaxial growth layer formed on a surface of a semiconductor substrate. Since the strained-layer of super-lattice composed of two or more group II-VI semiconductors is present in the heterojunction of the heterostructure, it is possible to form a favorable heterostructure seminconductor layer, inhibiting the adverse effects of lattice mismatch.
Inventors
- 👤 Toshiya Yokogawa
- 👤 Mototsugu Ogura
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 14:21
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/35; G02F1/355; G02F1/3556; B; B82; B82Y; B82Y20/00; H; H01; H01S; H01S5/00; H01S5/02; H01S5/026; H01S5/30; H01S5/34; H01S5/347; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/191; G02F1/01; G02F1/015; G02F1/017; G02F1/01766; G02F1/37; H01S2301/00; H01S2301/17; H01S2301/173; H01S5/0206; H01S5/021; H01S5/0218; H01S5/20; H01S5/2004; H01S5/32; H01S5/3201; H01S5/3403; H01S5/3406; H01S5/3409
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
88 words
A semiconductor device which is a second harmonic generator comprising a strained layer superlattice which is composed of a multilayer structure made of first and second Group II-VI semiconductors, said first and second Group II-VI semiconductors having first and second lattice constants respectively and formed on a semiconductor substrate, wherein when a first optical wave is incident on said strained layer for propagation in said strained layer, a second harmonic wave of a wavelength shorter than said first optical wave is generated by a nonlinear optical effect therein.
Claim 2
Dependent Claim
88 words
A semiconductor device which is a second harmonic generator comprising a strained layer superlattice which is composed of a multilayer structure made of first and second Group II-VI semiconductors, said first and second Group II-VI semiconductors having first and second lattice constants respectively and formed on a semiconductor substrate, wherein when a first optical wave is incident on said strained layer for propagation in said strained layer, a second harmonic wave of a wavelength shorter than said first optical wave is generated by a nonlinear optical effect therein.
Claim 3
Dependent Claim
26 words
The semiconductor device according to claim 1, wherein said strained layer superlattice is grown on a semiconductor layer formed on the surface of said semiconductor substrate.
Claim 4
Dependent Claim
26 words
The semiconductor device according to claim 2, wherein the refractive index of said strained layer superlattice is greater than the refractive index of said semiconductor layer.
Claim 5
Dependent Claim
27 words
The semiconductor device according to claim 1, further comprising a second semiconductor device formed on said semiconductor substrate in advance of formation of said strained layer superlattice.
Claim 6
Dependent Claim
26 words
The semiconductor device according to claim 1, wherein said first and second Group II-VI semiconductors are ZnSSe and ZnS, ZnSe and ZnS or ZnSe and ZnSSe.
Claim 7
Dependent Claim
36 words
The semiconductor device according to claim 2, wherein said strained layer superlattice is positioned between first semiconductor formed on said surface of semiconductor substrate and a second semiconductor, each having respective first and second lattice constants.
Claim 8
Dependent Claim
27 words
The semiconductor device according to claim 6, wherein the refractive index of said second semiconductor layer is greater than the refractive index of said first semiconductor layer.
Claim 9
Dependent Claim
26 words
The semiconductor device according to claim 1, wherein said strained layer superlattice is grown on an insulation film formed on the surface of said semiconductor substrate.
Claim 10
Dependent Claim
16 words
The semiconductor device according to claim 8, wherein said insulation film consists of SiO 2 .
Claim 11
Dependent Claim
26 words
The semiconductor device according to claim 8, wherein the refractive index of said strained layer superlattice is greater than the refractive index of said insulation film.
Claim 12
Dependent Claim
29 words
The semiconductor device according to claim 8, wherein said strained layer superlattice is positioned between said insulation film formed on said surface of semiconductor substrate and a semiconductor layer.
Claim 13
Dependent Claim
32 words
The semiconductor device according to claim 1, wherein said strained layer superlattice is grown on said surface of semiconductor substrate possessing a part coated with an insulation film and an exposed part.
Claim 14
Dependent Claim
16 words
The semiconductor device according to claim 12, wherein said insulation film consists of SiO 2 .
References Cited (Backward Citations)
US4525687A
Cited
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