US4439399A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Quaternary alloy
Assignee: United States Department of the Air Force
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Filing: 1982-05-06
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Granted: 1984-03-27
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Expires: 2002-05-06
Abstract
Abstract A wide band gap semiconductor alloy having a combination of P, In, Te, and Zn is formed by liquid phase epitaxy on an InP substrate. This alloy can be used for the formation of p-n junctions.
Inventors
- 👤 Frank Z. Hawrylo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 18:58
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/822; C; C22; C22C; C22C30/00; C22C30/06; H10D; H10D62/00; H10D62/80; H10H20/01; H10H20/811; H10P; H10P14/00; H10P14/20; H10P14/26; H10P14/263; H10P14/265; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/32; H10P14/3242; H10P14/3244; H10P14/3254; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3424; H10P14/3432
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
15 words
A semiconductor quarternary alloy being a solid solution consisting of indium, phosphoros, zinc, and tellurium.
Claim 2
Dependent Claim
15 words
A semiconductor quarternary alloy being a solid solution consisting of indium, phosphoros, zinc, and tellurium.
Claim 3
Dependent Claim
23 words
A semiconductor alloy as defined in claim 1, wherein the atomic percentages are about 30% indium, 35% phosphorous, 10% zinc, and 25% tellurium.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-03-27 | 1987-09-26 | 1988-03-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-03-27 | 1991-09-26 | 1992-03-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-03-27 | 1995-09-26 | 1996-03-27 | $7700.00 | Window Closed / Lapsed |