Patent US5300458A successfully refreshed from Google Patents.
US5300458A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor component and method for the manufacture thereof
Assignee: Infineon Technologies AG
•
Filing: 1993-02-25
•
Granted: 1994-04-05
•
Expires: 2013-02-25
Abstract
Abstract A semiconductor component comprises a semiconductor body that has its underside secured on a metallic substrate and is joined at its upper side to an auxiliary member composed of a material having great thermal conductivity and which serves as a heat buffer. This auxiliary member increases the loadability of the semiconductor component with respect to additional, thermal stressing pulses.
Inventors
- 👤 Reinhold Kuhnert
- 👤 Peter Tuerkes
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 15:03
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/10; H10W40/20; H10W40/25; H10W40/258; H10W72/00; H10W72/01; H10W72/013; H10W72/01365; H10W72/071; H10W72/073; H10W72/07311; H10W72/07331; H10W72/07336; H10W72/20; H10W72/29; H10W72/30; H10W72/321; H10W72/325; H10W72/351; H10W72/352; H10W72/50; H10W72/531; H10W72/5363; H10W72/541; H10W72/5434; H10W72/59; H10W72/90; H10W72/921; H10W72/923; H10W90/00; H10W90/701; H10W90/731; H10W90/736
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
125 words
A method for manufacturing a semiconductor component, comprising the steps of: providing a semiconductor body and an auxiliary member to be joined to the semiconductor body using pressure sintering; applying a contacting layer on an upper side of the semiconductor body; applying a paste formed of a metal powder and a solvent on at least one of said contacting layer at said upper side of said semiconductor body or an underside of said auxiliary member; drying the applied paste; and placing the auxiliary member with its underside on said contacting layer at said upper side of said semiconductor body and pressing the semiconductor body and auxiliary member together to pressure sinter at a sintering temperature with a pressure of at least 900 N/cm 2 .
Claim 2
Independent Claim
125 words
A method for manufacturing a semiconductor component, comprising the steps of: providing a semiconductor body and an auxiliary member to be joined to the semiconductor body using pressure sintering; applying a contacting layer on an upper side of the semiconductor body; applying a paste formed of a metal powder and a solvent on at least one of said contacting layer at said upper side of said semiconductor body or an underside of said auxiliary member; drying the applied paste; and placing the auxiliary member with its underside on said contacting layer at said upper side of said semiconductor body and pressing the semiconductor body and auxiliary member together to pressure sinter at a sintering temperature with a pressure of at least 900 N/cm 2 .
Claim 3
Independent Claim
122 words
A method for manufacturing a semiconductor component, comprising the steps of: providing a semiconductor body and an auxiliary member to be joined to the semiconductor body using pressure sintering; applying a contacting layer on an upper side of the semiconductor body; applying a paste formed of a silver powder and a solvent on at least one of said contacting layer at said upper side of said semiconductor body or an underside of said auxiliary member; drying the applied paste; and placing the auxiliary member with its underside on said contacting layer at said upper side of said semiconductor body and pressing the semiconductor body and auxiliary member together at a sintering temperature with a pressure of at least 900 N/cm 2 .
Claim 4
Independent Claim
122 words
A method for manufacturing a semiconductor component, comprising the steps of: providing a semiconductor body and an auxiliary member to be joined to the semiconductor body using pressure sintering; applying a contacting layer on an upper side of the semiconductor body; applying a paste formed of a silver powder and a solvent on at least one of said contacting layer at said upper side of said semiconductor body or an underside of said auxiliary member; drying the applied paste; and placing the auxiliary member with its underside on said contacting layer at said upper side of said semiconductor body and pressing the semiconductor body and auxiliary member together at a sintering temperature with a pressure of at least 900 N/cm 2 .
Claim 5
Independent Claim
150 words
A method for manufacturing a semiconductor component, comprising the steps of: providing a semiconductor body and an auxiliary member to be joined to the semiconductor body using pressure sintering; applying a first contacting layer on an upper side of the semiconductor body and applying a second contacting layer on an underside of said auxiliary member; applying a paste formed of a metal powder and a solvent on at least one of said first contacting layer at said upper side of said semiconductor body or on said second contacting layer on an underside of said auxiliary member; drying the applied paste; and placing the auxiliary member with its underside second contacting layer on said first contacting layer at said upper side of said semiconductor body and pressing the semiconductor body and auxiliary member together to pressure sinter at a sintering temperature with a pressure of at least 900 N/cm 2 .
Claim 6
Independent Claim
150 words
A method for manufacturing a semiconductor component, comprising the steps of: providing a semiconductor body and an auxiliary member to be joined to the semiconductor body using pressure sintering; applying a first contacting layer on an upper side of the semiconductor body and applying a second contacting layer on an underside of said auxiliary member; applying a paste formed of a metal powder and a solvent on at least one of said first contacting layer at said upper side of said semiconductor body or on said second contacting layer on an underside of said auxiliary member; drying the applied paste; and placing the auxiliary member with its underside second contacting layer on said first contacting layer at said upper side of said semiconductor body and pressing the semiconductor body and auxiliary member together to pressure sinter at a sintering temperature with a pressure of at least 900 N/cm 2 .
Claim 7
Independent Claim
79 words
A method for manufacturing a semiconductor component, comprising the steps of: providing an auxiliary member which is to be joined to a semiconductor body by diffusion welding; providing an upper side of said semiconductor body with a contacting layer; and placing an underside of the auxiliary member on the upper side of the semiconductor body and pressing together the auxiliary member and semiconductor body to diffusion weld at a moderate temperature with at least approximately 500 kp/cm 2 .
Claim 8
Independent Claim
79 words
A method for manufacturing a semiconductor component, comprising the steps of: providing an auxiliary member which is to be joined to a semiconductor body by diffusion welding; providing an upper side of said semiconductor body with a contacting layer; and placing an underside of the auxiliary member on the upper side of the semiconductor body and pressing together the auxiliary member and semiconductor body to diffusion weld at a moderate temperature with at least approximately 500 kp/cm 2 .
Claim 9
Dependent Claim
37 words
A method according to claim 4 wherein said contacting layer on the upper side of the semiconductor body is applied on a thin insulating layer that covers conductive coats at the upper side of the semiconductor body.
Claim 10
Independent Claim
87 words
A method for manufacturing a semiconductor component, comprising the steps of: providing an auxiliary member which is to be joined to a semiconductor body by diffusion welding; providing an upper side of said semiconductor body and an underside of said auxiliary member each with a contacting layer; and placing the underside of the auxiliary member on the upper side of the semiconductor body and pressing together the auxiliary member and semiconductor body to diffusion weld at a moderate temperature with at least approximately 500 kp/cm 2 .
Claim 11
Independent Claim
87 words
A method for manufacturing a semiconductor component, comprising the steps of: providing an auxiliary member which is to be joined to a semiconductor body by diffusion welding; providing an upper side of said semiconductor body and an underside of said auxiliary member each with a contacting layer; and placing the underside of the auxiliary member on the upper side of the semiconductor body and pressing together the auxiliary member and semiconductor body to diffusion weld at a moderate temperature with at least approximately 500 kp/cm 2 .
Claim 12
Dependent Claim
24 words
A method according to claim 6 wherein a deformable layer is provided between said contacting layer and said upper side of said semiconductor body.
Claim 13
Dependent Claim
15 words
A method according to claim 7 wherein said deformable layer comprises a multiple layer sequence.
Claim 14
Independent Claim
120 words
A method for manufacturing a semiconductor component, comprising the steps of: providing an auxiliary member which is to be joined to a semiconductor body by diffusion welding; providing an upper side of said semiconductor body and an underside of said auxiliary member each with a contacting layer, and a deformable layer between said contacting layer and said upper side of said semiconductor body, said deformable layer comprising one of the elements selected from the group consisting of silver, aluminum, nickel, platinum, or titanium; and placing the underside of the auxiliary member on the upper side of the semiconductor body and pressing together the auxiliary member and semiconductor body at a moderate temperature with at least approximately 500 kp/cm 2 .
Claim 15
Independent Claim
120 words
A method for manufacturing a semiconductor component, comprising the steps of: providing an auxiliary member which is to be joined to a semiconductor body by diffusion welding; providing an upper side of said semiconductor body and an underside of said auxiliary member each with a contacting layer, and a deformable layer between said contacting layer and said upper side of said semiconductor body, said deformable layer comprising one of the elements selected from the group consisting of silver, aluminum, nickel, platinum, or titanium; and placing the underside of the auxiliary member on the upper side of the semiconductor body and pressing together the auxiliary member and semiconductor body at a moderate temperature with at least approximately 500 kp/cm 2 .
References Cited (Backward Citations)
US4607779A
Cited
US4657170A
Cited
US4764804A
Cited
US4810672A
Cited
DE3731624A1
Cited
US4903885A
Cited
US4903886A
Cited
FR2636777A1
Cited
US4848639A
Cited
US5081067A
Cited
US5073521A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-04-04 | 1997-10-04 | 1998-04-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-04-04 | 2001-10-04 | 2002-04-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-04-04 | 2005-10-04 | 2006-04-05 | $7700.00 | Window Closed / Lapsed |