US5081067A
Expired / Lapsed
US
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Ceramic package type semiconductor device and method of assembling the same
Assignee: Fujitsu Semiconductor Ltd
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Filing: 1991-05-10
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Granted: 1992-01-14
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Expires: 2011-05-10
Abstract
Abstract A ceramic package type semiconductor device comprising: a ceramic substrate having a wiring pattern layer formed on a top surface thereof; at least one semiconductor element mounted on the ceramic substrate with a top face thereof facing downward and electrically connected to the wiring patttern layer; a metal cap having at least one through-hole corresponding to an external size of the semiconductor element and an end portion thereof soldered to the top surface of the ceramic substrate, so that a top surface of the metal cap and a bottom surface of the semiconductor element fitting into the through-hole form a flat plane: and a heatsink member comprising a plate portion which is soldered to the flat plane of the metal cap and the semiconductor element to complete a hermetic sealing of the semiconductor element.
Inventors
- 👤 Nobutaka Shimizu
- 👤 Takehisa Tsujimura
- 👤 Masahiro Sugimoto
- 👤 Shigeki Harada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 19:00
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/10; H10W76/12; H10W40/00; H10W40/20; H10W40/22; H10W40/226; H10W70/00; H10W70/60; H10W70/62; H10W70/63; H10W70/635; H10W76/15; H10W76/157; Y; Y10; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913; Y10T29/49144
Claims Analysis
Total Claims: 24
Claim 1
Independent Claim
191 words
A method of assembling a semiconductor device of a hermetic sealing ceramic package type comprising the steps of: mounting at least one semiconductor element on a ceramic substrate with a top face thereof facing downward and electrically connected to a wiring pattern layer of the ceramic substrate; placing a solder frame on said ceramic substrate at a peripheral region of the substrate; placing a metal cap having at least one through-hole corresponding to an external size of said semiconductor element, on said solder frame, to fit said semiconductor element into said through-hole and to form a flat plane with the top surface of said metal cap and the bottom surface of said semiconductor element; heating the assembling device to solder said metal cap to said ceramic substrate; placing a solder plate on said flat plane of the top surface of said metal cap and the bottom surface of said semiconductor element; placing a plate portion of a heatsink member on said solder plate; and heating the assembling device to solder said plate portion to said metal cap and said semiconductor element, whereby a hermetic sealing of the semiconductor element is completed.
Claim 2
Independent Claim
191 words
A method of assembling a semiconductor device of a hermetic sealing ceramic package type comprising the steps of: mounting at least one semiconductor element on a ceramic substrate with a top face thereof facing downward and electrically connected to a wiring pattern layer of the ceramic substrate; placing a solder frame on said ceramic substrate at a peripheral region of the substrate; placing a metal cap having at least one through-hole corresponding to an external size of said semiconductor element, on said solder frame, to fit said semiconductor element into said through-hole and to form a flat plane with the top surface of said metal cap and the bottom surface of said semiconductor element; heating the assembling device to solder said metal cap to said ceramic substrate; placing a solder plate on said flat plane of the top surface of said metal cap and the bottom surface of said semiconductor element; placing a plate portion of a heatsink member on said solder plate; and heating the assembling device to solder said plate portion to said metal cap and said semiconductor element, whereby a hermetic sealing of the semiconductor element is completed.
Claim 3
Dependent Claim
46 words
A method according to claim 1, wherein said solder frame has a melting point higher than that of said solder plate, and said heating step for said solder plate is carried out at a temperature higher than that of said heating step for said solder frame.
Claim 4
Dependent Claim
24 words
A method according to claim 2, wherein said solder frame is made of Au-Sn solder, and said solder plate is made of Pb-Sn solder.
Claim 5
Dependent Claim
44 words
A method according to claim 1, wherein said heatsink plate portion is made of a material selected from a group consisting of aluminum nitride ceramic, silicon carbide ceramic, Cu-W alloy, Cu-Mo alloy and AlSi alloy, and is coated with a metal layer for soldering.
Claim 6
Dependent Claim
48 words
A method according to claim 4, wherein said heatsink plate portion of aluminum nitride ceramic is coated with a metal lower layer formed by one of a sputtering method and a screen-printing method, and a metal upper layer is formed on the lower layer by a plating method.
Claim 7
Dependent Claim
45 words
A method according to claim 5, wherein said plating metal layer consists of a Ni plating layer having a thickness of 1.0 μm or more and an Au plating layer having a thickness of 0.2 to 1.0 μm and formed on the Ni plating layer.
Claim 8
Dependent Claim
35 words
A method according to claim 1, wherein said metal cap is made of an alloy selected from a group consisting of Fe-Ni-Co alloy and Fe-Ni alloy and is coated with a metal layer for soldering.
Claim 9
Dependent Claim
39 words
A method according to claim 7, wherein said metal cap is coated with a Ni plating layer having a thickness of 2.0 μm or more and then an Au plating layer having a thickness of 0.1 to 1.0 μm.
Claim 10
Dependent Claim
33 words
A method according to claim 1 further comprising, after said heating step for said solder plate, a step of bonding a heat dissipation fin portion to said heatsink plate portion with a resin.
Claim 11
Dependent Claim
26 words
A method according to claim 1, wherein said heatsink member consists of the plate portion and a heat dissipation fin portion fixed to said plate portion.
Claim 12
Dependent Claim
19 words
A method according to claim 10, wherein said fin portion is fixed to said plate portion with a solder.
Claim 13
Dependent Claim
21 words
A method according to claim 10, wherein said fin portion is fixed to said plate portion by a friction welding method.
Claim 14
Independent Claim
200 words
A method of assembling a semiconductor device of a hermetic sealing ceramic package type comprising the steps of: mounting at least one semiconductor element on a ceramic substrate with a top face thereof facing downward and electrically connected to a wiring pattern layer of the ceramic substrate; placing a solder frame on said ceramic substrate at a peripheral region of the substrate; placing a metal cap having at least one through-hole corresponding to an external size of said semiconductor element, on said solder frame, to fit said semiconductor element into said through-hole and to form a flat plane with the top surface of said metal cap and the bottom surface of said semiconductor element; placing a solder plate made of the same solder as that of said solder frame on said flat plane of the top surface of said metal cap and the bottom surface of said semiconductor element; placing a plate portion of a heatsink member on said solder plate; and heating the assembling device to solder said metal cap to said ceramic substrate and to simultaneously solder said plate portion to said metal cap and said semiconductor element, whereby a hermetic sealing of the semiconductor element is completed.
Claim 15
Independent Claim
200 words
A method of assembling a semiconductor device of a hermetic sealing ceramic package type comprising the steps of: mounting at least one semiconductor element on a ceramic substrate with a top face thereof facing downward and electrically connected to a wiring pattern layer of the ceramic substrate; placing a solder frame on said ceramic substrate at a peripheral region of the substrate; placing a metal cap having at least one through-hole corresponding to an external size of said semiconductor element, on said solder frame, to fit said semiconductor element into said through-hole and to form a flat plane with the top surface of said metal cap and the bottom surface of said semiconductor element; placing a solder plate made of the same solder as that of said solder frame on said flat plane of the top surface of said metal cap and the bottom surface of said semiconductor element; placing a plate portion of a heatsink member on said solder plate; and heating the assembling device to solder said metal cap to said ceramic substrate and to simultaneously solder said plate portion to said metal cap and said semiconductor element, whereby a hermetic sealing of the semiconductor element is completed.
Claim 16
Dependent Claim
44 words
A method according to claim 13, wherein said heatsink plate portion is made of a material selected from a group consisting of aluminum nitride ceramic, silicon carbide ceramic, Cu-W alloy, Cu-Mo alloy, Cu, Al and Mo and is coated with metal layer for soldering.
Claim 17
Dependent Claim
50 words
A method according to claim 14, wherein said heatsink plate portion of aluminum nitride ceramic is coated with a metal lower layer formed by one of a sputtering method and a screen-printing and baking method, and a metal upper layer is formed on the lower layer by a plating method.
Claim 18
Dependent Claim
45 words
A method according to claim 15, wherein said plating metal layer consists of a Ni plating layer having a thickness of 1.0 μm or more and an Au plating layer having a thickness of 0.2 to 1.0 μm and formed on the Ni plating layer.
Claim 19
Dependent Claim
35 words
A method according to claim 13, wherein said metal cap is made of an alloy selected from a group consisting of Fe-Ni-Co alloy and Fe-Ni alloy and is coated with a metal layer for soldering.
Claim 20
Dependent Claim
39 words
A method according to claim 17, wherein said metal cap is coated with a Ni plating layer having a thickness of 2.0 μm or more and then an Au plating layer having a thickness of 0.1 to 1.0 μm.
Claim 21
Dependent Claim
33 words
A method according to claim 13 further comprising, after said heating step for said solder plate, a step of bonding a heat dissipation fin portion to said heatsink plate portion with a resin.
Claim 22
Dependent Claim
26 words
A method according to claim 13, wherein said heatsink member consists of the plate portion and a heat dissipation fin portion fixed to said plate portion.
Claim 23
Dependent Claim
19 words
A method according to claim 20, wherein said fin portion is fixed to said plate portion with a solder.
Claim 24
Dependent Claim
21 words
A method according to claim 20, wherein said fin portion is fixed to said plate portion by a friction welding method.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-13 | 1995-07-15 | 1996-01-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-13 | 1999-07-15 | 2000-01-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-13 | 2003-07-15 | 2004-01-14 | $7700.00 | Window Closed / Lapsed |