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US4607779A Expired / Lapsed US ⏱️ 0.0 years remaining

Non-impact thermocompression gang bonding method

Assignee: National Semiconductor Corp
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Filing: 1983-08-11
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Granted: 1986-08-26
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Expires: 2003-08-11
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Abstract

Abstract A non-impact form of thermocompression gang bonding of metal lead fingers to integrated circuit chip pads is disclosed. The method produces a plurality of simultaneously bonded chips using conventional heating means and totally avoids mechanical and thermal shock. The result is highly reliable bonding that results in exceptionally high bond strength.

Inventors

  • 👤 Carmen D. Burns

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-31 22:31
CPC Classifications
H; H10; H10W; H10W99/00

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 189 words
A non-impact thermocompression gang bonding process comprising the steps: locating a plurality of semiconductor device chips in predetermined positions and orientations on a substantially rigid flat surface, said chips having upwardly facing bonding pads; laying a copper lead pattern array on top of said chips, said array comprising a plurality of copper fingers each one of which has a bonding bump at its end extending in the plane of said array, said copper fingers being formed and arrayed so that their bumps form patterns that mate with the bonding pad patterns on said chips; locating said array so that said bumps on said metal fingers register with said bonding pads; applying a resilient pressure distributing sheet on top of said array; clamping a flat plate onto said pressure distributing sheet, whereby each finger in said array is pressed against its associated bonding pad with a pressure of about 20 to 100 grams; and heating said chips in contact with said fingers at about 325° C. for about 15 minutes to bond said fingers to said chips with said temperature being substantially below any metal eutectic temperature in the system.
Claim 2
Dependent Claim 189 words
A non-impact thermocompression gang bonding process comprising the steps: locating a plurality of semiconductor device chips in predetermined positions and orientations on a substantially rigid flat surface, said chips having upwardly facing bonding pads; laying a copper lead pattern array on top of said chips, said array comprising a plurality of copper fingers each one of which has a bonding bump at its end extending in the plane of said array, said copper fingers being formed and arrayed so that their bumps form patterns that mate with the bonding pad patterns on said chips; locating said array so that said bumps on said metal fingers register with said bonding pads; applying a resilient pressure distributing sheet on top of said array; clamping a flat plate onto said pressure distributing sheet, whereby each finger in said array is pressed against its associated bonding pad with a pressure of about 20 to 100 grams; and heating said chips in contact with said fingers at about 325° C. for about 15 minutes to bond said fingers to said chips with said temperature being substantially below any metal eutectic temperature in the system.
Claim 3
Dependent Claim 194 words
A non-impact thermocompression gang bonding process comprising the steps: locating a plurality of semiconductor device chips in predetermined positions and orientation on a substantially rigid flat surface, said chips having upwardly facing bonding pads; laying a copper lead pattern array on top of said chips, said array comprising a plurality of copper fingers each one of which has a bonding bump at its end extending in the plane of said array, said copper fingers being formed and arrayed so that their bumps form patterns that mate with the pad patterns on said chips; locating said array so that said bumps on said metal fingers register with said bonding pads; applying a resilient pressure distributing sheet on top of said array; applying a flat plate onto said pressure distributing sheet and locating a suitable weight thereon whereby each finger in said array is pressed against its associated bonding pad with a pressure of about 20 to 100 grams; and heating said chips in contact with said fingers at about 325° C. for about 15 minutes to bond said fingers to said chips with said temperature being substantially below any metal eutectic temperature in the system.
Claim 4
Dependent Claim 194 words
A non-impact thermocompression gang bonding process comprising the steps: locating a plurality of semiconductor device chips in predetermined positions and orientation on a substantially rigid flat surface, said chips having upwardly facing bonding pads; laying a copper lead pattern array on top of said chips, said array comprising a plurality of copper fingers each one of which has a bonding bump at its end extending in the plane of said array, said copper fingers being formed and arrayed so that their bumps form patterns that mate with the pad patterns on said chips; locating said array so that said bumps on said metal fingers register with said bonding pads; applying a resilient pressure distributing sheet on top of said array; applying a flat plate onto said pressure distributing sheet and locating a suitable weight thereon whereby each finger in said array is pressed against its associated bonding pad with a pressure of about 20 to 100 grams; and heating said chips in contact with said fingers at about 325° C. for about 15 minutes to bond said fingers to said chips with said temperature being substantially below any metal eutectic temperature in the system.
Claim 5
Dependent Claim 17 words
The process of claims 1 or 2 wherein said heating step is accomplished in a reducing atmosphere.

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-08-25 1990-02-24 1990-08-26 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-08-25 1994-02-24 1994-08-26 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-08-25 1998-02-24 1998-08-26 $7700.00 Window Closed / Lapsed

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