Patent US5298792A successfully refreshed from Google Patents.
US5298792A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit device with bi-level contact landing pads
Assignee: Micron Technology Inc
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Filing: 1992-02-03
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Granted: 1994-03-29
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Expires: 2012-02-03
Abstract
Abstract A semiconducting wafer has an active area and first and second field oxide regions adjacent opposite sides of the active area. A first poly layer is deposited to form a first landing pad member electrically contacting the active area and overlapping the first field oxide region. Then an insulating oxide layer is deposited, followed by a second poly layer to form a second landing pad member overlapping the first landing pad member and the second field oxide region. A contact etch is performed with the landing pad members acting as an etch stop. A contact is deposited to electrically contact the landing pad members.
Inventors
- 👤 Monte Manning
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 22:54
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/90; H10W72/20; H10W72/29
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
181 words
An integrated circuit structure for an integrated circuit, said integrated circuit having a predetermined minimum size for said contact landing pad, said structure comprising: a semiconductor wafer having an active area formed therein; a first landing pad member formed in a first layer over said active area, wherein an edge portion of said first landing pad member lies in a first level above said semiconductor wafer; a second landing pad member formed in a second layer at least partially over said first landing pad member, wherein an edge portion of said first landing pad member provides a second edge of said contact landing pad and lies in a second level above said semiconductor wafer separated from the first level; wherein at least one of said first and second landing pad members electrically contacts said active area, said first landing pad member partially overlaps said second landing pad member, and the combined landing pad area of said first and second landing pad members is at least as large as the predetermined minimum size for a contact landing pad in said integrated circuit.
Claim 2
Dependent Claim
181 words
An integrated circuit structure for an integrated circuit, said integrated circuit having a predetermined minimum size for said contact landing pad, said structure comprising: a semiconductor wafer having an active area formed therein; a first landing pad member formed in a first layer over said active area, wherein an edge portion of said first landing pad member lies in a first level above said semiconductor wafer; a second landing pad member formed in a second layer at least partially over said first landing pad member, wherein an edge portion of said first landing pad member provides a second edge of said contact landing pad and lies in a second level above said semiconductor wafer separated from the first level; wherein at least one of said first and second landing pad members electrically contacts said active area, said first landing pad member partially overlaps said second landing pad member, and the combined landing pad area of said first and second landing pad members is at least as large as the predetermined minimum size for a contact landing pad in said integrated circuit.
Claim 3
Dependent Claim
21 words
An integrated circuit structure as in claim 1 further comprising a material layer between said first and second landing pad members.
Claim 4
Dependent Claim
16 words
An integrated circuit structure as in claim 2 wherein said material layer is a dielectric layer.
Claim 5
Dependent Claim
23 words
An integrated circuit structure as in claim 3 wherein said first landing pad member is electrically insulated from said second landing pad member.
Claim 6
Dependent Claim
43 words
An integrated circuit structure as in claim 1 further comprising a contact insulating layer formed over the first and second landing pad members, wherein said first and second landing pad members provide an etch stop for an etch of the contact insulating layer.
Claim 7
Dependent Claim
28 words
An integrated circuit structure as in claim 3 wherein said second landing pad member electrically contacts said first landing pad member through an opening in said dielectric layer.
Claim 8
Dependent Claim
19 words
An integrated circuit structure as in claim 1 wherein said first landing pad member electrically contacts said active area.
Claim 9
Dependent Claim
25 words
An integrated circuit structure as in claim 7 wherein said second landing pad member electrically contacts said active area and said first landing pad member.
Claim 10
Dependent Claim
19 words
An integrated circuit structure as in claim 1 wherein said second landing pad member electrically contacts said active area.
Claim 11
Dependent Claim
22 words
An integrated circuit structure as in claim 9 wherein said second landing pad member also directly contacts said first landing pad member.
Claim 12
Dependent Claim
49 words
An integrated circuit structure as in claim 5 wherein said integrated circuit further includes a field oxide layer adjacent said active area, and wherein said first and second landing pad members extend over said field oxide to protect it from damage during the etch of the contact insulating layer.
Claim 13
Dependent Claim
73 words
An integrated circuit structure as in claim 11 wherein said field oxide layer includes a first field oxide region on one side of said active area and a second field oxide region on the opposite side of said active area from said first field oxide region, and wherein said first landing pad member extends over said first field oxide region while said second landing pad member extends over said second field oxide region.
Claim 14
Dependent Claim
38 words
An integrated circuit structure as in claim 1 wherein said first landing pad member is fabricated from a first layer of doped polysilicon and said second landing pad member is fabricated from a second layer of doped polysilicon.
Claim 15
Dependent Claim
30 words
An integrated circuit structure as in claim 13 wherein said integrated circuit further includes a silicon dioxide layer between said first layer of polysilicon and said second layer of polysilicon.
Claim 16
Dependent Claim
115 words
A contact structure for an integrated circuit, said integrated circuit having a predetermined minimum size for a contact landing pad, said contact structure comprising: a semiconductor wafer having an active area formed therein; a first landing pad member electrically contacting said active area; a second landing pad member partially overlapping said first contact landing pad member; and a conductive contact means positioned on said first and second contact landing pad members for electrically contacting at least one of said first and second landing pad members, wherein the combined landing pad area of said first and second landing pad members is larger than said predetermined minimum size for a contact landing pad in said integrated circuit.
Claim 17
Dependent Claim
115 words
A contact structure for an integrated circuit, said integrated circuit having a predetermined minimum size for a contact landing pad, said contact structure comprising: a semiconductor wafer having an active area formed therein; a first landing pad member electrically contacting said active area; a second landing pad member partially overlapping said first contact landing pad member; and a conductive contact means positioned on said first and second contact landing pad members for electrically contacting at least one of said first and second landing pad members, wherein the combined landing pad area of said first and second landing pad members is larger than said predetermined minimum size for a contact landing pad in said integrated circuit.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-03-28 | 1997-09-27 | 1998-03-29 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-28 | 2001-09-27 | 2002-03-29 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-28 | 2005-09-27 | 2006-03-29 | $7700.00 | Window Closed / Lapsed |