Semiconductor device having multiple conductive layers and the method of manufacturing the semiconductor device

Claim 1

A semiconductor device comprising: a plurality of semiconductor elements having at least one PN junction, said elements being formed on a substrate; an insulating separating layer imbedded in a portion of said substrate and raised above the surface thereof for separating, below the surface of the substrate, at least two of said semiconductor elements; a first insulation layer formed on said substrate; a first conductive layer comprising, a first electrode formed on said first insulation layer, an additional conductive layer formed on said insulating separating layer, and another conductive layer formed on said insulating separating layer; a second insulation layer formed on said first conductive layer; a second conductive layer formed on said second insulation layer; a third insulation layer formed above said second insulation layer; a third conductive layer formed on said third insulation layer, said third conductive layer being connected by a plurality of separate conductive paths to said semiconductor elements in said semiconductor device through contact holes, every such contact hole passing through the same number of said layers of insulation, said separate conductive paths including said additional conductive layer, said third conductive layer connected to said another conductive layer and said additional conductive layer through said contact holes and to said second conductive layer through said additional conductive layer.