Light emitting semiconductor device having multilayer structure

Abstract

Abstract ZnSSE mixed crystal semiconductors and ZnCdSe mixed crystal semiconductors are alternately laminated on a single crystal substrate composed of a III-V or II-VI compound to form a light emitting semiconductor device of a multilayer structure so that electrons and holes are efficiently confined therein. This increases the carrier recombination probability and emission efficiency. A device may be arranged where mixed crystal semiconductors of two types respectively having different component compositions of Zn 1-x1 Cd x1 S y1 Se 1-y1 and Zn 1-x2 Cd x2 S y2 Se 1-y2 are alternately laminated on a single crystal substrate composed of a III-V or II-VI compound such that the ratio of components of the mixed crystal semiconductors of two types satisfies the relationship that x 1 is smaller than x 2 and y 1 is greater than y 2 . Alternately, a device may be arranged where a Zn 1-x Cd x S y Se 1-y layer is formed on a single crystal substrate composed of a III-V or II-VI compound, a Zn 1-x1 Cd x1 S y1 Se 1-y1 layer is formed on the Zn.sub. 1-x Cd x S y Se 1-y layer, and a ZnS y2 Se 1-y2 layer is formed on the Zn 1-x1 Cd x1 S y1 Se 1-y1 , such that each of the Zn 1-x Cd x S y Se 1-y and the ZnS y2 Se 1-y2 has a lattice constant substantially equal to that of the substrate and the Zn 1-x1 Cd x1 S y1 Se 1-y1 has a lattice constant different from that of the substrate.

Inventors

• 👤 Shigeo Fujita
• 👤 Shizuo Fujita

Bibliographic Details