Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
619 words
A latching sense amplifier comprising: a first circuit generating a first pair of outputs, the first pair of outputs at a first and a second node representative of a voltage differential between a first and a second input voltage, wherein the first circuit comprises: the first, the second, a third and a fourth node, the third and fourth nodes receiving a first and second supply voltage, respectively; a first transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode and the control electrode coupled to the first node: a second transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the first node, the second current electrode coupled to the fourth node and the control electrode coupled to the first input voltage; a third transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode and the control electrode coupled to the second node: a fourth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the second node, the second current electrode coupled to the fourth node and the control electrode coupled to the second input voltage: a second circuit coupled to the first circuit generating a second pair of outputs, the second pair of outputs representative of a voltage differential between the first and the second input voltages, wherein the second circuit comprises: a fifth, a sixth, a seventh, an eighth and a ninth node, the ninth node receiving the second supply voltage wherein the seventh and eighth nodes forming outputs of the latching sense amplifier; a fifth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode coupled to the seventh node and the control electrode coupled to the fifth node; a sixth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the seventh node, the second current electrode coupled to the ninth node and the control electrode coupled to the second input voltage; a seventh transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode coupled to the eighth node and the control electrode coupled to the sixth node; an eighth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the eighth node, the second current electrode coupled to the ninth node and the control electrode coupled to the first input voltage; latching circuitry generating a third pair of outputs, the third pair of outputs representative of the voltage differential between the first and the second input voltages, wherein the latching circuitry comprises: a tenth node; a ninth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the seventh node, the second current electrode coupled to the tenth node and the control electrode coupled to the eighth node; and a tenth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the eighth node, the second current electrode coupled to the tenth node and the control electrode coupled to the seventh node; and switching circuitry coupled to the first circuit, to the second circuit and to the latching circuitry configuring the second circuit to operate in conjunction with the latching circuitry to form a latch.
Claim 2
Dependent Claim
619 words
A latching sense amplifier comprising: a first circuit generating a first pair of outputs, the first pair of outputs at a first and a second node representative of a voltage differential between a first and a second input voltage, wherein the first circuit comprises: the first, the second, a third and a fourth node, the third and fourth nodes receiving a first and second supply voltage, respectively; a first transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode and the control electrode coupled to the first node: a second transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the first node, the second current electrode coupled to the fourth node and the control electrode coupled to the first input voltage; a third transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode and the control electrode coupled to the second node: a fourth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the second node, the second current electrode coupled to the fourth node and the control electrode coupled to the second input voltage: a second circuit coupled to the first circuit generating a second pair of outputs, the second pair of outputs representative of a voltage differential between the first and the second input voltages, wherein the second circuit comprises: a fifth, a sixth, a seventh, an eighth and a ninth node, the ninth node receiving the second supply voltage wherein the seventh and eighth nodes forming outputs of the latching sense amplifier; a fifth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode coupled to the seventh node and the control electrode coupled to the fifth node; a sixth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the seventh node, the second current electrode coupled to the ninth node and the control electrode coupled to the second input voltage; a seventh transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode coupled to the eighth node and the control electrode coupled to the sixth node; an eighth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the eighth node, the second current electrode coupled to the ninth node and the control electrode coupled to the first input voltage; latching circuitry generating a third pair of outputs, the third pair of outputs representative of the voltage differential between the first and the second input voltages, wherein the latching circuitry comprises: a tenth node; a ninth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the seventh node, the second current electrode coupled to the tenth node and the control electrode coupled to the eighth node; and a tenth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the eighth node, the second current electrode coupled to the tenth node and the control electrode coupled to the seventh node; and switching circuitry coupled to the first circuit, to the second circuit and to the latching circuitry configuring the second circuit to operate in conjunction with the latching circuitry to form a latch.
Claim 3
Dependent Claim
69 words
The latching sense amplifier of claim 1 wherein the switching circuitry comprises: a first switching element for alternately coupling and uncoupling the first and fifth nodes; a second switching element for alternately coupling and uncoupling the second and sixth nodes; a third switching element for alternately coupling and uncoupling the fifth and eighth nodes; and a fourth switching element for alternately coupling and uncoupling the sixth and seventh nodes.
Claim 4
Dependent Claim
96 words
The latching sense amplifier of claim 2 further comprising: a first enable transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the fourth node, the second current electrode receiving the second supply voltage and the control electrode receiving a first enable signal; and a second enable transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the ninth node, the second current electrode receiving the second supply voltage and the control electrode receiving a second enable signal.
Claim 5
Dependent Claim
55 words
The latching sense amplifier of claim 2 further comprising: a first enable transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the fourth and ninth nodes, the second current electrode receiving the second supply voltage and the control electrode coupled to a first enable signal.
Claim 6
Dependent Claim
587 words
A latching sense amplifier comprising: a first circuit generating a first pair of outputs, the first pair of outputs at a first and a second node representative of a voltage differential between a first and a second input voltage, wherein the first circuit comprises: the first, the second, a third and a fourth node, the third and fourth nodes receiving a first and second supply voltage, respectively; a first transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode and the control electrode coupled to the first node; a second transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the first node, the second current electrode coupled to the fourth node and the control electrode coupled to the first input voltage; a third transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode and the control electrode coupled to the second node; a fourth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the second node, the second current electrode coupled to the fourth node and the control electrode coupled to the second input voltage; a second circuit coupled to the first circuit generating a second pair of outputs, the second pair of outputs representative of a voltage differential between the first and the second input voltages, wherein the second circuit comprises: a fifth, a sixth, a seventh, an eighth and a ninth node, the ninth node receiving the second supply voltage wherein the seventh and eighth nodes forming outputs of the latching sense amplifier; a fifth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode coupled to the seventh node and the control electrode coupled to the fifth node; a sixth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the seventh node, the second current electrode coupled to the ninth node and the control electrode coupled to the second input voltage; a seventh transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode coupled to the eighth node and the control electrode coupled to the sixth node; an eighth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the eighth node, the second current electrode coupled to the ninth node and the control electrode coupled to the first input voltage; latching circuitry generating a third pair of outputs, the third pair of outputs representative of the voltage differential between the first and the second input voltages; switching circuitry coupled to the first circuit, to the second circuit and to the latching circuitry configuring the second circuit to operate in conjunction with the latching circuitry to form a latch, the switching circuitry comprising: a first switching element for alternately coupling and uncoupling the the first and fifth nodes; a second switching element for alternately coupling and uncoupling the second and sixth nodes; a third switching element for alternately coupling and uncoupling the fifth and eighth nodes; and a fourth switching element for alternately coupling and uncoupling the sixth and seventh nodes.
Claim 7
Dependent Claim
587 words
A latching sense amplifier comprising: a first circuit generating a first pair of outputs, the first pair of outputs at a first and a second node representative of a voltage differential between a first and a second input voltage, wherein the first circuit comprises: the first, the second, a third and a fourth node, the third and fourth nodes receiving a first and second supply voltage, respectively; a first transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode and the control electrode coupled to the first node; a second transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the first node, the second current electrode coupled to the fourth node and the control electrode coupled to the first input voltage; a third transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode and the control electrode coupled to the second node; a fourth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the second node, the second current electrode coupled to the fourth node and the control electrode coupled to the second input voltage; a second circuit coupled to the first circuit generating a second pair of outputs, the second pair of outputs representative of a voltage differential between the first and the second input voltages, wherein the second circuit comprises: a fifth, a sixth, a seventh, an eighth and a ninth node, the ninth node receiving the second supply voltage wherein the seventh and eighth nodes forming outputs of the latching sense amplifier; a fifth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode coupled to the seventh node and the control electrode coupled to the fifth node; a sixth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the seventh node, the second current electrode coupled to the ninth node and the control electrode coupled to the second input voltage; a seventh transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode coupled to the eighth node and the control electrode coupled to the sixth node; an eighth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the eighth node, the second current electrode coupled to the ninth node and the control electrode coupled to the first input voltage; latching circuitry generating a third pair of outputs, the third pair of outputs representative of the voltage differential between the first and the second input voltages; switching circuitry coupled to the first circuit, to the second circuit and to the latching circuitry configuring the second circuit to operate in conjunction with the latching circuitry to form a latch, the switching circuitry comprising: a first switching element for alternately coupling and uncoupling the the first and fifth nodes; a second switching element for alternately coupling and uncoupling the second and sixth nodes; a third switching element for alternately coupling and uncoupling the fifth and eighth nodes; and a fourth switching element for alternately coupling and uncoupling the sixth and seventh nodes.
Claim 8
Dependent Claim
96 words
The latching sense amplifier of claim 5 further comprising: a first enable transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the fourth node, the second current electrode receiving the second supply voltage and the control electrode receiving a first enable signal; and a second enable transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the ninth node, the second current electrode receiving the second supply voltage and the control electrode receiving a second enable signal.
Claim 9
Dependent Claim
55 words
The latching sense amplifier of claim 5 further comprising: a first enable transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the fourth and ninth nodes, the second current electrode receiving the second supply voltage and the control electrode coupled to a first enable signal.
Claim 10
Dependent Claim
690 words
A memory system comprising: a plurality of memory bit cells, each one of the plurality of memory cells generating one of a plurality of voltage differentials, each one of the plurality of voltage differentials representative of one of a plurality of stored logic states; circuitry coupled to the plurality of memory bit cells enabling one of the plurality memory bit cells responsive to input signals; a sense amplifier coupled to the plurality of memory bit cells comprising: a first circuit generating a first pair of outputs, the first pair of outputs at a first and a second node representative of a voltage differential between a first and a second input voltage, wherein the first circuit comprises: the first, the second, a third and a fourth node, the third and fourth nodes receiving a first and second supply voltage, respectively; a first transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode and the control electrode coupled to the first node; a second transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the first node, the second current electrode coupled to the fourth node and the control electrode coupled to the first input voltage; a third transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode and the control electrode coupled to the second node; a fourth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the second node, the second current electrode coupled to the fourth node and the control electrode coupled to the second input voltage; a second circuit coupled to the first circuit generating a second pair of outputs, the second pair of outputs representative of a voltage differential between the first and the second input voltages, wherein the second circuit comprises: a fifth, a sixth, a seventh, an eighth and a ninth node, the ninth node receiving the second supply voltage wherein the seventh and eighth nodes forming outputs of the latching sense amplifier; a fifth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode coupled to the seventh node and the control electrode coupled to the fifth node; a sixth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the seventh node, the second current electrode coupled to the ninth node and the control electrode coupled to the second input voltage; a seventh transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode coupled to the eighth node and the control electrode coupled to the sixth node; an eighth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the eighth node, the second current electrode coupled to the ninth node and the control electrode coupled to the first input voltage; latching circuitry generating a third pair of outputs, the third pair of outputs representative of the voltage differential between the first and the second input voltages, wherein the latching circuitry comprises: a tenth node; a ninth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the seventh node, the second current electrode coupled to the tenth node and the control electrode coupled to the eighth node; a tenth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the eighth node, the second current electrode coupled to the tenth node and the control electrode coupled to the seventh node; and switching circuitry coupled to the first circuit, to the second circuit and to the latching circuitry configuring the second circuit to operate in conjunction with the latching circuitry to form a latch.
Claim 11
Dependent Claim
690 words
A memory system comprising: a plurality of memory bit cells, each one of the plurality of memory cells generating one of a plurality of voltage differentials, each one of the plurality of voltage differentials representative of one of a plurality of stored logic states; circuitry coupled to the plurality of memory bit cells enabling one of the plurality memory bit cells responsive to input signals; a sense amplifier coupled to the plurality of memory bit cells comprising: a first circuit generating a first pair of outputs, the first pair of outputs at a first and a second node representative of a voltage differential between a first and a second input voltage, wherein the first circuit comprises: the first, the second, a third and a fourth node, the third and fourth nodes receiving a first and second supply voltage, respectively; a first transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode and the control electrode coupled to the first node; a second transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the first node, the second current electrode coupled to the fourth node and the control electrode coupled to the first input voltage; a third transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode and the control electrode coupled to the second node; a fourth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the second node, the second current electrode coupled to the fourth node and the control electrode coupled to the second input voltage; a second circuit coupled to the first circuit generating a second pair of outputs, the second pair of outputs representative of a voltage differential between the first and the second input voltages, wherein the second circuit comprises: a fifth, a sixth, a seventh, an eighth and a ninth node, the ninth node receiving the second supply voltage wherein the seventh and eighth nodes forming outputs of the latching sense amplifier; a fifth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode coupled to the seventh node and the control electrode coupled to the fifth node; a sixth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the seventh node, the second current electrode coupled to the ninth node and the control electrode coupled to the second input voltage; a seventh transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the third node, the second current electrode coupled to the eighth node and the control electrode coupled to the sixth node; an eighth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the eighth node, the second current electrode coupled to the ninth node and the control electrode coupled to the first input voltage; latching circuitry generating a third pair of outputs, the third pair of outputs representative of the voltage differential between the first and the second input voltages, wherein the latching circuitry comprises: a tenth node; a ninth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the seventh node, the second current electrode coupled to the tenth node and the control electrode coupled to the eighth node; a tenth transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the eighth node, the second current electrode coupled to the tenth node and the control electrode coupled to the seventh node; and switching circuitry coupled to the first circuit, to the second circuit and to the latching circuitry configuring the second circuit to operate in conjunction with the latching circuitry to form a latch.
Claim 12
Dependent Claim
68 words
The memory system of claim 8 wherein the switching circuitry comprises: a first switching element for alternately coupling and uncoupling the first and fifth nodes; a second switching element for alternately coupling and uncoupling the second and sixth nodes; a third switching element for alternately coupling and uncoupling the fifth and eighth nodes; and a fourth switching element for alternately coupling and uncoupling the sixth and seventh nodes.
Claim 13
Dependent Claim
95 words
The memory system of claim 9 further comprising: a first enable transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the fourth node, the second current electrode receiving the second supply voltage and the control electrode receiving a first enable signal; and a second enable transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the ninth node, the second current electrode receiving the second supply voltage and the control electrode receiving a second enable signal.
Claim 14
Dependent Claim
54 words
The memory system of claim 9 further comprising: a first enable transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the fourth and ninth nodes, the second current electrode receiving the second supply voltage and the control electrode coupled to a first enable signal.
Claim 15
Dependent Claim
98 words
The memory system of claim 8 wherein the switching circuitry comprises: a first enable transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the fourth node, the second current electrode receiving the second supply voltage and the control electrode receiving a first enable signal; and a second enable transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the ninth node, the second current electrode receiving the second supply voltage and the control electrode receiving a second enable signal.
Claim 16
Dependent Claim
54 words
The memory system of claim 8 further comprising: a first enable transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the fourth and ninth nodes, the second current electrode receiving the second supply voltage and the control electrode coupled to a first enable signal.
Claim 17
Dependent Claim
96 words
The latching sense amplifier of claim 1 further comprising: a first enable transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the fourth node, the second current electrode receiving the second supply voltage and the control electrode receiving a first enable signal; and a second enable transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the ninth node, the second current electrode receiving the second supply voltage and the control electrode receiving a second enable signal.
Claim 18
Dependent Claim
55 words
The latching sense amplifier of claim 1 further comprising: a first enable transistor comprising a first and a second current electrode and a control electrode, the first current electrode coupled to the fourth and ninth nodes, the second current electrode receiving the second supply voltage and the control electrode coupled to a first enable signal.