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Patent US5294571A successfully refreshed from Google Patents.
US5294571A
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Rapid thermal oxidation of silicon in an ozone ambient
Assignee: NXP BV
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Filing: 1992-07-22
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Granted: 1994-03-15
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Expires: 2012-07-22
Abstract
Abstract Disclosed are methods for preparing SiO 2 layers in semiconductor devices by the rapid thermal oxidation of silicon in an ozone ambient.
Inventors
- 👤 Felix Fujishiro
- 👤 Chang-Ou Lee
- 👤 Landon Vines
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 10:34
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6322; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
105 words
A method for preparing a SiO 2 layer on a semiconductor device which method comprises the steps of: (a) placing a semiconductor device having a surface layer containing silicon in at least a part thereof, into a chamber; and (b) oxidizing the silicon on the surface of the device to SiO 2 by rapid thermal oxidation under conditions wherein at least a portion of surface of the semiconductor device is oxidized to SiO 2 wherein the oxidation is conducted in an atmosphere comprising oxygen and form about 4 to about 15 volume percent ozone at a temperature from about 850° C. to about 1050° C.
Claim 2
Independent Claim
105 words
A method for preparing a SiO 2 layer on a semiconductor device which method comprises the steps of: (a) placing a semiconductor device having a surface layer containing silicon in at least a part thereof, into a chamber; and (b) oxidizing the silicon on the surface of the device to SiO 2 by rapid thermal oxidation under conditions wherein at least a portion of surface of the semiconductor device is oxidized to SiO 2 wherein the oxidation is conducted in an atmosphere comprising oxygen and form about 4 to about 15 volume percent ozone at a temperature from about 850° C. to about 1050° C.
Claim 3
Independent Claim
115 words
A method for preparing a SiO 2 gate oxide layer on a semiconductor device containing a substrate, channels, and optionally, doped source and drain sites, which method comprises the steps of: (a) placing the semiconductor device into a chamber of a rapid thermal processing device; (b) oxidizing the silicon on the surface of the device to SiO 2 by rapid thermal oxidation under conditions so as to from a layer of at least 50 Å of SiO 2 on the surface of the substrate, wherein the oxidation is conducted in an atmosphere comprising oxygen and from about 4 to about 15 volume percent ozone at a temperature from about 850° C. to about 1050° C.
Claim 4
Independent Claim
115 words
A method for preparing a SiO 2 gate oxide layer on a semiconductor device containing a substrate, channels, and optionally, doped source and drain sites, which method comprises the steps of: (a) placing the semiconductor device into a chamber of a rapid thermal processing device; (b) oxidizing the silicon on the surface of the device to SiO 2 by rapid thermal oxidation under conditions so as to from a layer of at least 50 Å of SiO 2 on the surface of the substrate, wherein the oxidation is conducted in an atmosphere comprising oxygen and from about 4 to about 15 volume percent ozone at a temperature from about 850° C. to about 1050° C.
Claim 5
Dependent Claim
24 words
The method as described in claim 2 wherein the source sites, drain sites, channels, and substrate contain Group III or Group V dopant elements.
Claim 6
Dependent Claim
13 words
The method as described in claim 3 wherein the substrate contains well regions.
Claim 7
Dependent Claim
47 words
The method as described in claim 3 wherein the source sites and drain sites contain one or more dopants from Group III elements and the channel contains one or more dopants from Group V or III, and the substrate contains one or more dopants from Group V.
Claim 8
Dependent Claim
47 words
The method as described in claim 3 wherein the source sites and drain sites contain one or more dopants from Group V elements and the channel contains one or more dopants from Group V or III, and the substrate contains one or more dopants from Group III.
Claim 9
Dependent Claim
51 words
The method as described in claim 4 wherein the source sites and drain sites contain one or more dopants from Group III elements and the channel contains one or more dopants from Group V or III, and the well region of the substrate contains one or more dopants from Group V.
Claim 10
Dependent Claim
51 words
The method as described in claim 4 wherein the source sites and drain sites contain one or more dopants from Group V elements and the channel contains one or more dopants from Group V or III, and the well region of the substrate contains one or more dopants from Group III.
Claim 11
Dependent Claim
24 words
The method as described in claim 2 wherein the oxidation is conducted at a temperature of from about 850° C. to about 1050° C.
Claim 12
Dependent Claim
20 words
The method as described in claim 9 wherein the oxidation is conducted from about 850° C. to about 950° C.
Claim 13
Dependent Claim
16 words
The method as described in claim 10 wherein the oxidation is conducted at about 900° C.
Claim 14
Dependent Claim
20 words
The method as described in claim 2 wherein the SiO 2 layer is from about 80 to about 150 Å.
Claim 15
Dependent Claim
19 words
The method as described in claim 2 wherein the oxidation times are from about 20 to about 60 seconds.
Claim 16
Dependent Claim
21 words
The method as described in claim 1 wherein the ozone ambient contains from about 5 to about 6 volume percent ozone.
Claim 17
Dependent Claim
21 words
The method as described in claim 1 wherein the ozone ambient further comprises up to about 2.5 volume percent of HCl.
Claim 18
Dependent Claim
21 words
The method as described in claim 2 wherein the ozone ambient contains from about 5 to about 6 volume percent ozone.
Claim 19
Dependent Claim
21 words
The method as described in claim 2 wherein the ozone ambient further comprises up to about 2.5 volume percent of HCl.
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