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Patent US5293075A successfully refreshed from Google Patents.
US5293075A
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Semiconductor device with PZT/PLZT film and lead-containing electrode
Assignee: Sharp Corp
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Filing: 1992-05-29
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Granted: 1994-03-08
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Expires: 2012-05-29
Abstract
Abstract A semiconductor device comprising an oxide film, an electrode and a PZT or PLZT film formed in this order on a substrate, the electrode being a deposit of platinum containing lead.
Inventors
- 👤 Shigeo Onishi
- 👤 Kazuya Ishihara
- 👤 Keizo Sakiyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 05:36
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/692
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
50 words
A semiconductor device comprising: a substrate; an oxide film formed on the substrate; an electrode formed on the oxide film; and a PZT or PLZT film formed on the electrode; the electrode being a deposit of platinum containing lead, wherein said deposit contains 5 to 20 wt. % of lead.
Claim 2
Dependent Claim
50 words
A semiconductor device comprising: a substrate; an oxide film formed on the substrate; an electrode formed on the oxide film; and a PZT or PLZT film formed on the electrode; the electrode being a deposit of platinum containing lead, wherein said deposit contains 5 to 20 wt. % of lead.
Claim 3
Dependent Claim
23 words
A semiconductor device as set forth in claim 1, wherein the electrode is formed by sputtering using platinum containing lead as a target.
Claim 4
Dependent Claim
60 words
A semiconductor device comprising: a substrate; an oxide film formed on the substrate; an electrode formed on the oxide film; and a PZT or PLZT film formed on the electrode; the electrode being a deposit which contains platinum and lead prior to formation of the PZT or PLZT film, wherein said deposit contains 5 to 20 wt. % of lead.
Claim 5
Dependent Claim
60 words
A semiconductor device comprising: a substrate; an oxide film formed on the substrate; an electrode formed on the oxide film; and a PZT or PLZT film formed on the electrode; the electrode being a deposit which contains platinum and lead prior to formation of the PZT or PLZT film, wherein said deposit contains 5 to 20 wt. % of lead.
References Cited (Backward Citations)
US5046043A
Cited
US5099305A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-03-07 | 1997-09-06 | 1998-03-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-07 | 2001-09-06 | 2002-03-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-07 | 2005-09-06 | 2006-03-08 | $7700.00 | Window Closed / Lapsed |