Patent US5288650A successfully refreshed from Google Patents.
US5288650A
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Prenucleation process for simox device fabrication
Assignee: Ibis Technology Corp
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Filing: 1992-10-09
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Granted: 1994-02-22
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Expires: 2012-10-09
Abstract
Abstract A method of manufacturing SIMOX heterostructures is disclosed wherein a subcritical dose of oxygen ions is implanted following a first, short "nucleating" implant and a nucleation growth step. The SIMOX structure thus formed has a thin, buried oxide layer and sharp interfaces.
Inventors
- 👤 Peter M. Sandow
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 10:32
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/208; H10P30/209; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1908; H10W; H10W10/00; H10W10/10; H10W10/181
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
121 words
A method of producing a buried insulating layer in a silicon substrate comprising the steps of A. implanting a subcritical dose of at least one first ion species into said substrate to induce a controlled amount of damage to regions of the silicon lattice within a subsurface layer; B. creating nucleation sites in the damaged silicon lattice within said subsurface layer by heating the substrate following ion implantation to enlarge the damaged regions; C. implanting oxygen ions into said subsurface layer following the creation of the nucleation sites to deliver a total oxygen dose to the substrate less than 1.5×10 18 ions/cm 2 ; and D. annealing said substrate to form a buried layer of silicon dioxide in said silicon substrate.
Claim 2
Independent Claim
121 words
A method of producing a buried insulating layer in a silicon substrate comprising the steps of A. implanting a subcritical dose of at least one first ion species into said substrate to induce a controlled amount of damage to regions of the silicon lattice within a subsurface layer; B. creating nucleation sites in the damaged silicon lattice within said subsurface layer by heating the substrate following ion implantation to enlarge the damaged regions; C. implanting oxygen ions into said subsurface layer following the creation of the nucleation sites to deliver a total oxygen dose to the substrate less than 1.5×10 18 ions/cm 2 ; and D. annealing said substrate to form a buried layer of silicon dioxide in said silicon substrate.
Claim 3
Dependent Claim
13 words
The method of claim 1 wherein said first ion species comprises oxygen ions.
Claim 4
Dependent Claim
20 words
The method of claim 1 wherein said first ion species is selected from the group consisting of argon and silicon.
Claim 5
Dependent Claim
26 words
The method of claim 1 wherein said nucleation sites are formed by heating said substrate at a temperature of about 700-800° C. for about 10-20 hours.
Claim 6
Dependent Claim
18 words
The method of claim 4 wherein sad substrate is heated at about 800° C. for about 20 hours.
Claim 7
Dependent Claim
25 words
The method of claim 1 wherein said first ion species is implanted at a dose of about 10 16 to 10 17 ions/cm 2 .
Claim 8
Dependent Claim
24 words
The method of claim 1 wherein said oxygen ions are implanted at a dose of about 10 17 to 10 18 ions/cm 2 .
Claim 9
Dependent Claim
23 words
The method of claim 1 wherein said first ion species are implanted at a substrate temperature within the range of about 400°-450° C.
Claim 10
Dependent Claim
22 words
The method of claim 1 wherein said oxygen ions are implanted at a substrate temperature within the range of about 600°-750° C.
Claim 11
Dependent Claim
17 words
The method of claim 1 wherein said annealing temperature is within the range of about 1100°-1400° C.
Claim 12
Dependent Claim
17 words
The method of claim 10 wherein said annealing temperature is within the range of about 1300°-1350° C.
Claim 13
Dependent Claim
17 words
The method of claim 1 wherein said oxygen ions are implanted with an increasing ion beam energy.
Claim 14
Dependent Claim
13 words
The method of claim 12 wherein said ion beam energy is increased continuously.
Claim 15
Dependent Claim
16 words
The method of claim 12 wherein said ion beam energy is increased in multiple, discrete steps.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-02-21 | 1997-08-23 | 1998-02-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-21 | 2001-08-23 | 2002-02-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-21 | 2005-08-23 | 2006-02-22 | $7700.00 | Window Closed / Lapsed |