EP0208577A1
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EP
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Method of controlling dopant diffusion and dopant electrical activation
Assignee: Fairchild Semiconductor Corp
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Filing: 1986-06-10
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Granted: —
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Expires: 2006-06-10
Abstract
Abstract A method for preparing semiconductor components having a structure with sharply defined spatial distributions of dopant atoms with control over the degree of electricalactiva- tion of the dopant atoms. Control of spatial distribution and the degree of electrical activation of dopant atoms is achieved by implantation of dopant atoms along with rare gas atoms and another type of dopant atom within substantially the same preselected depth boundaries of a silicon or germanium substrate.
Inventors
- 👤 Sheldon Aronowitz
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 11:31
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/208; H10P30/21; H10P30/212; H10P30/28; H10P32/00; H10P95/00; H10P95/90; H10P30/225
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
172 words
A method of preparing a semiconductor structure having a depth region of first dopant atoms with controllable electrical activation and with an attenuated diffusivity of first dopant atoms within preselected depth boundaries in a semiconductor substrate doped by ion implantation, comprising the steps of: implanting a preselected concentration of said first dopant atoms within said depth region of said substrate defined by said preselected depth boundaries; implanting rare gas atoms of selected concentrations within said depth region of said substrate defined by said preselected depth boundaries; implanting second dopant atoms of selected concentrations within said depth region of said substrate defined by said preselected depth boundaries; and equilibrium annealing said semiconductor substrate for removing damage in said semiconductor substrate created by said implanting steps and for electrically activating a portion of said first dopant atoms while maintaining said attenuated diffusivity of said first dopant atom?, the amount of electrical activation of said first dopant atom portion being dependent on said selected concentrations of said rare gas atoms and said second dopant atoms.
Claim 2
Independent Claim
172 words
A method of preparing a semiconductor structure having a depth region of first dopant atoms with controllable electrical activation and with an attenuated diffusivity of first dopant atoms within preselected depth boundaries in a semiconductor substrate doped by ion implantation, comprising the steps of: implanting a preselected concentration of said first dopant atoms within said depth region of said substrate defined by said preselected depth boundaries; implanting rare gas atoms of selected concentrations within said depth region of said substrate defined by said preselected depth boundaries; implanting second dopant atoms of selected concentrations within said depth region of said substrate defined by said preselected depth boundaries; and equilibrium annealing said semiconductor substrate for removing damage in said semiconductor substrate created by said implanting steps and for electrically activating a portion of said first dopant atoms while maintaining said attenuated diffusivity of said first dopant atom?, the amount of electrical activation of said first dopant atom portion being dependent on said selected concentrations of said rare gas atoms and said second dopant atoms.
Claim 3
Independent Claim
183 words
A method of preparing a semiconductor structure having a depth region of first dopant atoms with controllable electrical activation and with an attenuated diffusivity of said first dopant atoms within preselected depth boundaries in a semiconductor substrate doped by diffusion of said dopant atoms and accompanied by implantation of rare gas atoms, comprising the steps of: diffusing preselected concentrations of said first dopant atoms within said depth region of said substrate defined by said preselected depth boundaries; implanting rare gas atoms of selected concentrations within said depth region of said substrate defined by said preselected depth boundaries; diffusing second dopant atoms of selected concentrations within said depth region of said substrate defined by said preselected depth boundaries; and equilibrium annealing said semiconductor substrate for removing damage in said semiconductor substrate created by said implanting step and for electrically activating a portion of said first dopant atoms while maintaining said attenuated diffusivity of said first dopant atoms, the amount of electrical activation of said first dopant atom portion being dependent on said selected concentrations of said rare gas atoms and said second dopant atoms.
Claim 4
Independent Claim
183 words
A method of preparing a semiconductor structure having a depth region of first dopant atoms with controllable electrical activation and with an attenuated diffusivity of said first dopant atoms within preselected depth boundaries in a semiconductor substrate doped by diffusion of said dopant atoms and accompanied by implantation of rare gas atoms, comprising the steps of: diffusing preselected concentrations of said first dopant atoms within said depth region of said substrate defined by said preselected depth boundaries; implanting rare gas atoms of selected concentrations within said depth region of said substrate defined by said preselected depth boundaries; diffusing second dopant atoms of selected concentrations within said depth region of said substrate defined by said preselected depth boundaries; and equilibrium annealing said semiconductor substrate for removing damage in said semiconductor substrate created by said implanting step and for electrically activating a portion of said first dopant atoms while maintaining said attenuated diffusivity of said first dopant atoms, the amount of electrical activation of said first dopant atom portion being dependent on said selected concentrations of said rare gas atoms and said second dopant atoms.
Claim 5
Dependent Claim
148 words
A semiconductor structure having dopant atom depth regions of predetermined concentration and thickness and preselected depth boundaries relative to a top surface of a silicon or germanium substrate, comprising: a rare gas atom distribution positioned within said preselected depth boundaries of said substrate; a first dopant atom distribution positioned within substantially the same said preselected depth boundaries as said rare gas atom distribution; and a second dopant atom distribution positioned within substantially the same said preselected depth boundaries as said first dopant atom distribution and said rare gas atom distribution, and means for electrically activating said first dopant atoms by equilibrium annealing, wherein said second dopant atom distribution thickness is reduced and curvature is sharpened for said predetermined concentration for said predefined depth boundaries relative to said semiconductor structure having present within said predefined depth boundaries only said rare gas atom distribution and said first dopant atct, distribution.
Claim 6
Dependent Claim
148 words
A semiconductor structure having dopant atom depth regions of predetermined concentration and thickness and preselected depth boundaries relative to a top surface of a silicon or germanium substrate, comprising: a rare gas atom distribution positioned within said preselected depth boundaries of said substrate; a first dopant atom distribution positioned within substantially the same said preselected depth boundaries as said rare gas atom distribution; and a second dopant atom distribution positioned within substantially the same said preselected depth boundaries as said first dopant atom distribution and said rare gas atom distribution, and means for electrically activating said first dopant atoms by equilibrium annealing, wherein said second dopant atom distribution thickness is reduced and curvature is sharpened for said predetermined concentration for said predefined depth boundaries relative to said semiconductor structure having present within said predefined depth boundaries only said rare gas atom distribution and said first dopant atct, distribution.
Claim 7
Dependent Claim
24 words
The semiconductor structure as defined in Claim 3 wherein said rare gas atom is selected from the group consisting of neon, argon and krypton.
Claim 8
Dependent Claim
15 words
The semiconductor structure as defined in Claim 3 wherein said rare gas atom is neon.
Claim 9
Dependent Claim
26 words
The semiconductor struoture as defined in Claim 3 wherein said first dopant atom is selected from the group consisting of lithium, phosphorus, arsenic, antimony, and bismuth.
Claim 10
Dependent Claim
25 words
The semiconductor structure as defined in Claim 3 wherein said first dopant atom is selected from the group consisting of boron, aluminum, gallium and indium.
Claim 11
Dependent Claim
66 words
The semiconductor structure as defined in Claim 4 wherein said first dopant atom and said seconj dopant atom are selected from the pair group consisting of Li/B, Li/Al, Li/Ga, Li/In, P/B, P/Al, P/Ga, P/:n, As/B, As/Ga, As/In, Sb/B, Sb/Al, Sb/Ga, Sb/In, Bi/B, Bi/Al, Bi/Ga, Bi/In, B/Li, B/P, B/As, B/Sb, B/Bi, Al/Li, Al/P, Al/As, Al/Sb, Al/Bi, Ga/Li, Ga/P, Ga/As, Ga/Sb, Ga/Bi, In/Li, In/P, In/As, In/Sb and In/Bi.
Claim 12
Dependent Claim
17 words
A microelectronic circuit component comprising a semiconductor element having said component stnucture as defined in Claim 3.
Claim 13
Dependent Claim
20 words
The semiconductor structure as defined in Claim 3 further including a third dopant atom distribution overlapping said predefined depth boundaries.
Claim 14
Dependent Claim
23 words
The semiconductor structure as defined in Claim 10 wherein said third dopant atom is selected from the group consisting of nitrogen and oxygen.
Claim 15
Dependent Claim
27 words
The semiconductor structure as defined in Claim 11 wherein said third dopant atom is nitrogen and its distribution overlaps said predefined depth boundary nearest said top surface.
Claim 16
Dependent Claim
32 words
The semiconductor component structure as defined in Claim 11 wherein said third dopant atom is oxygen, and wherein said oxygen dopant atom distribution overlaps said predefined boundary furthest from said top surface.
Claim 17
Dependent Claim
33 words
The semiconductor component structure of Claim 10 wherein said rare gas, first dopant, second dopant and third dopant atom distributions are selected from the quaternary group consisting of Ar/As/B/N, Ar/As/B/0, Ar/P/B/N and Ar/P/B/O.
References Cited (Backward Citations)
US3773566A
Cited
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