Patent US5284795A successfully refreshed from Google Patents.
US5284795A
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Thermal annealing of semiconductor devices
Assignee: Freescale Semiconducteurs France SAS
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Filing: 1991-12-09
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Granted: 1994-02-08
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Expires: 2011-12-09
Abstract
Abstract A method of processing a semiconductor device in which a microwave field is generated to surround the semiconductor device while a focussed electron beam or ion beam is applied to the substrate of the device whereby the presence of the electron or ion beam creates a conductive region which increases the microwave field intensity in that region, so that the intensified microwave field creates a local heating effect in the substrate to perform a local annealing action.
Inventors
- 👤 Henri Gay
- 👤 Denis Griot
- 👤 Irenee Pages
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:28
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/90; Y; Y10; Y10S; Y10S148/00; Y10S148/071
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
97 words
A method of processing a semiconductor device comprising the steps of: generating a microwave field; generating an electron or ion beam; and applying the microwave field to surround a semiconductor device substrate and while said microwave field is applied, focusing said electron or ion beam on a portion of said semiconductor device substrate whereby the presence of the electron or ion beam creates a conductive region which increases the microwave field intensity in said region so that the intensified microwave field creates a local heating effect in said semiconductor device substrate to perform a local annealing action.
Claim 2
Independent Claim
97 words
A method of processing a semiconductor device comprising the steps of: generating a microwave field; generating an electron or ion beam; and applying the microwave field to surround a semiconductor device substrate and while said microwave field is applied, focusing said electron or ion beam on a portion of said semiconductor device substrate whereby the presence of the electron or ion beam creates a conductive region which increases the microwave field intensity in said region so that the intensified microwave field creates a local heating effect in said semiconductor device substrate to perform a local annealing action.
Claim 3
Dependent Claim
17 words
A method according to claim 1 wherein the semiconductor device comprises a wafer having integrated circuits thereon.
Claim 4
Dependent Claim
23 words
A method according to claim 1 wherein the ion beam comprises a beam of arsenic boron or phosphorus ions for doping the substrate.
Claim 5
Dependent Claim
20 words
A method according to claim 1 wherein the ion beam comprises a beam of oxygen ions for oxidising the substrate.
Claim 6
Dependent Claim
30 words
A method according to claim 1 wherein the electron beam is employed for direct writing on a doped layer of material whereby to cause ion migration to locally heated regions.
Claim 7
Dependent Claim
22 words
A method according to claim 1 wherein the ion beam concentration is between 10 +12 and 10 +16 ions cm -3 .
Claim 8
Dependent Claim
18 words
A method according to claim 1 wherein the frequency of the microwaves is between 2 and 4 GHz.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-02-07 | 1997-08-09 | 1998-02-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-02-07 | 2001-08-09 | 2002-02-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-02-07 | 2005-08-09 | 2006-02-08 | $7700.00 | Window Closed / Lapsed |