US4303455A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low temperature microwave annealing of semiconductor devices
Assignee: Boeing North American Inc
•
Filing: 1980-03-14
•
Granted: 1981-12-01
•
Expires: 2000-03-14
Abstract
Abstract Briefly, and in general terms, the present invention provides a process for fabricating a semiconductor device, the device includes a semiconductor substrate having a major surface including an ion implanting region, wherein one fabrication step in the process subsequent to the formation of the ion implantation region is to direct a beam of microwave radiation at the device for annealing the ion implanted regions.
Inventors
- 👤 Michael R. Splinter
- 👤 Richard F. Palys
- 👤 Moiz M. Beguwala
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 20:17
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
58 words
A process for fabricating a semiconductor device, the device comprising a semiconductor substrate having a major surface including an ion implanted region, characterized in that one fabrication step in the process subsequent to the formation of the ion implanted regions is to direct a beam of microwave radiation at said entire device for annealing the ion implanted regions.
Claim 2
Dependent Claim
58 words
A process for fabricating a semiconductor device, the device comprising a semiconductor substrate having a major surface including an ion implanted region, characterized in that one fabrication step in the process subsequent to the formation of the ion implanted regions is to direct a beam of microwave radiation at said entire device for annealing the ion implanted regions.
Claim 3
Dependent Claim
29 words
A process as defined in claim 1, wherein said one fabrication step anneals charged surface states so as to cause substitution of the impurity atoms in the silicon lattice.
Claim 4
Dependent Claim
30 words
A process as defined in claim 1, wherein said one fabrication step takes place at room temperature, and said beam of microwave radiation produces only localized heating of said device.
Claim 5
Dependent Claim
60 words
A process as defined in claim 1, wherein said microwave radiation is of a frequency in the range of 1 to 10 gigaHertz so that the electromagnetic field of the microwave radiation couples with the semiconductor lattice of the ion-implanted region causing lattice heating due to the release of phonons, the remaining non-ion-implanted silicon being essentially transparent to the radiation.
Claim 6
Dependent Claim
25 words
A process as defined in claim 1, wherein the step of directing a beam of microwave radiation comprises placing said device in a microwave oven.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-11-30 | 1985-06-01 | 1985-12-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-11-30 | 1989-06-01 | 1989-12-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-11-30 | 1993-06-01 | 1993-12-01 | $7700.00 | Window Closed / Lapsed |