Abstract Dopants in semiconductor bodies which have been deactivated during processing are reactivated by pulse heating the body to a temperature within the region in which the semiconductor sheet resistivity decreases with increasing anneal temperature. Typically this comprises raising the body to 1000° C. within 40 seconds or less in an inert atmosphere and allowing it to cool immediately or within approximately 30 seconds. The heating is so rapid that diffusion side effects are minimized. Pulse heating may be achieved by means of a sealable microwave heating chamber (1) which can be pressurized or vented as desired and into which microwave energy is directed for a predetermined time. The microwave heating can also be employed for other processing, particularly high pressure oxidation of silicon.
A method of oxidizing a silicon body including: arranging the body in a sealable chamber comprising a length of microwave waveguide; introducing an oxygen ambient atmosphere at a pressure of approximately 20 atmospheres in the chamber; and pulse heating the body by directing microwaves into said chamber for a predetermined time.
Claim 2
Independent Claim
51 words
A method of oxidizing a silicon body including: arranging the body in a sealable chamber comprising a length of microwave waveguide; introducing an oxygen ambient atmosphere at a pressure of approximately 20 atmospheres in the chamber; and pulse heating the body by directing microwaves into said chamber for a predetermined time.
Claim 3
Dependent Claim
37 words
A method in accordance with claim 1, wherein: during said pulse heating step said body is heated to approximately 1000° C. to grow an oxide layer of the order of 150 Å thick in approximately one minute.
Claim 4
Independent Claim
34 words
A method as claimed in claims 1 or 2, wherein the semiconductor body is provided with a doped layer which is such as to directly absorb the microwaves and enhance the heating effect thereof.
Claim 5
Dependent Claim
15 words
A method in accordance with claim 1, wherein said microwaves are directed through said wafer.
Claim 6
Dependent Claim
20 words
A method in accordance with claim 1, wherein the H 1 ,1, mode of propagation of said microwaves is used.
Claim 7
Dependent Claim
13 words
A method in accordance with claim 5, wherein said microwaves are circularly polarized.
Claim 8
Dependent Claim
12 words
A method in accordance with claim 6, wherein said waveguide is cylindrical.