US4298629A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a nitride insulating film on a silicon semiconductor substrate surface by direct nitridation
Assignee: Fujitsu Ltd
•
Filing: 1980-03-07
•
Granted: 1981-11-03
•
Expires: 2000-03-07
Abstract
Abstract In a method for forming an insulating film on a semiconductor substrate surface, the silicon nitride of the insulating film has been formed by a plasma CVD or a direct nitridation. In the present invention, a gas plasma of a nitrogen-containing gas is generated in a direct nitridation reaction chamber, and the semiconductor silicon body is heated to a temperature of from approximately 800 to approximately 1300 DEG C. within the gas plasma atmosphere, thereby forming the silicon nitride film. The resulting silicon nitride film has a dense structure and a low oxygen concentration and a thick silicon nitride film is formed in a short period by direct nitridation of silicon.
Inventors
- 👤 Takao Nozaki
- 👤 Takashi Ito
- 👤 Hideki Arakawa
- 👤 Hajime Ishikawa
- 👤 Masaichi Shinoda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 17:22
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6516; H10P14/6518; H10P14/6519; H10P14/6522; H10P14/6524; H10P14/6529; H10P14/63; H10P14/6302; H10P14/6316; H10P14/6319; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6927; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
82 words
A method for forming an insulating film on the surface of at least one semiconductor silicon body, wherein the insulating film is formed of silicon nitride by direct nitridation in a direct nitridation reaction chamber, comprising positioning each semiconductor body in the direct nitridation reaction chamber, generating a gas plasma of a nitrogen containing gas in the direct nitridation reaction chamber, and heating the semiconductor silicon body to a temperature of from approximately 800° to approximately 1300° C. within the gas plasma.
Claim 2
Independent Claim
82 words
A method for forming an insulating film on the surface of at least one semiconductor silicon body, wherein the insulating film is formed of silicon nitride by direct nitridation in a direct nitridation reaction chamber, comprising positioning each semiconductor body in the direct nitridation reaction chamber, generating a gas plasma of a nitrogen containing gas in the direct nitridation reaction chamber, and heating the semiconductor silicon body to a temperature of from approximately 800° to approximately 1300° C. within the gas plasma.
Claim 3
Dependent Claim
13 words
A method according to claim 1, wherein said nitrogen containing gas is ammonia.
Claim 4
Dependent Claim
19 words
A method according to claim 2, wherein said ammonia has a purity of not less than 99.99 volume %.
Claim 5
Dependent Claim
13 words
A method according to claim 1, wherein said nitrogen containing gas is hydrazine.
Claim 6
Dependent Claim
13 words
A method according to claim 1, wherein said nitrogen containing gas is nitrogen.
Claim 7
Dependent Claim
18 words
A method according to claim 1, wherein said nitrogen containing gas is a mixture of hydrogen and nitrogen.
Claim 8
Dependent Claim
23 words
A method according to claim 6, wherein the volume ratio of hydrogen and nitrogen is in the range of from 1:1 to 1:3.
Claim 9
Dependent Claim
18 words
A method according to claim 1, wherein said nitrogen containing gas is a mixture of nitrogen and ammonia.
Claim 10
Dependent Claim
21 words
A method according to claim 2, 4, 5, 6, 7 or 8, wherein said nitrogen containing gas includes an inert gas.
Claim 11
Dependent Claim
16 words
A method according to claim 1, wherein the nitridation temperature is from 800° to 1200° C.
Claim 12
Dependent Claim
47 words
A method according to claim 1, comprising heating each said semiconductor body in said gas plasma for a time in the range of from approximately 1 minute to 10 3 minutes to form said silicon nitride film to have a thickness of not less than 50 A.
Claim 13
Dependent Claim
35 words
A method according to claim 1, wherein said semiconductor silicon body is supported in said direct nitridation reaction chamber by a supporting means which comprises at least carbon body with a silicon carbide coating thereon.
Claim 14
Dependent Claim
28 words
A method according to claim 1, wherein said semiconductor silicon body is supported in said direct nitridation reaction chamber by a supporting means which comprises a silicon body.
Claim 15
Dependent Claim
29 words
A method according to claim 1, wherein said semiconductor silicon body is supported in said direct nitridation reaction chamber by a supporting means which comprises a silicon carbide body.
Claim 16
Dependent Claim
51 words
A method according to claim 12, 13 or 14, said heating of each said semiconductor silicon body comprising induction heating of said supporting means by a high frequency power heating means, and wherein said generating of said gas plasma is due to induction heating by said high frequency power heating means.
Claim 17
Dependent Claim
41 words
A method according to claim 1, comprising generating said gas plasma by capacitive coupling of the inner space of said reaction chamber with a pair of electrodes located externally of said reaction chamber and to which an AC voltage is applied.
Claim 18
Dependent Claim
23 words
A method according to claim 1, wherein said gas plasma is generated by the conduction of a microwave through said nitrogen containing gas.
Claim 19
Dependent Claim
31 words
A method according to claim 1, 12, 13, 14, 16 or 17, wherein a laser beam is scanned over the surface of said semiconductor silicon substrate to heat said semiconductor body.
Claim 20
Dependent Claim
27 words
A method according to claim 1, wherein a plurality of said semiconductor silicon bodies are positioned vertically in said direct nitridation reaction chamber by respective supporting means.
Claim 21
Dependent Claim
26 words
A method according to claim 19, said direct nitridation reaction chamber having a central axis, said method comprising rotating said supporting means around said central axis.
Claim 22
Dependent Claim
28 words
A method according to claim 19, wherein said semiconductor bodies are supported on the surfaces of supporting plates which are positioned vertically in said direct nitridation reaction chamber.
Claim 23
Dependent Claim
22 words
A method according to claim 21, wherein said supporting plates are rotated around the central axis of said direct nitridation reaction chamber.
Claim 24
Dependent Claim
22 words
A method according to claim 1, comprising heat treating said silicon nitride film formed by direct nitridation in a nonplasma ammonia atmosphere.
Claim 25
Dependent Claim
28 words
A method according to claim 1, comprising heat treating said silicon nitride film in an oxygen atmosphere so as to oxidize the surface of said silicon nitride film.
Claim 26
Dependent Claim
29 words
A method according to claim 1, wherein a region of said semiconductor substrate is provided with a substantially amorphous structure and said silicon nitride is formed on said region.
Claim 27
Dependent Claim
16 words
A method according to claim 25, wherein said substantially amorphous structure is produced by ion implantation.
Claim 28
Dependent Claim
42 words
A method according to claim 1, wherein a DC bias is applied to said gas plasma, said DC bias having such a polarity that the positively charged particles of said gas plasma are forced to move toward each said semiconductor silicon substrate.
Claim 29
Dependent Claim
27 words
A method according to claim 1, said heating of each said semiconductor silicon body comprising direct heating by induction heating with a high frequency power heating means.
Claim 30
Dependent Claim
18 words
A method according to claim 28, wherein each said semiconductor silicon body comprises a heavily doped silicon substrate.
Claim 31
Dependent Claim
26 words
A method according to claim 1, comprising forming said film of silicon nitride on a region of said semiconductor silicon substrate selectively exposed by a mask.
References Cited (Backward Citations)
US3108900A
Cited
US3424661A
Cited
DE1964942A1
Cited
US3730863A
Cited
US3728051A
Cited
US4206190A
Cited
US4113515A
Cited
US4142004A
Cited
JPS5319291A
Cited
US4179618A
Cited
US4181541A
Cited
US4212687A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1984-11-02 | 1985-05-04 | 1985-11-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1988-11-02 | 1989-05-04 | 1989-11-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1992-11-02 | 1993-05-04 | 1993-11-03 | $7700.00 | Window Closed / Lapsed |