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US5284788A
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Method and device for controlling current in a circuit
Assignee: Texas Instruments Inc
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Filing: 1992-09-25
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Granted: 1994-02-08
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Expires: 2012-09-25
Abstract
Abstract A device (10) for controlling current through a circuit has an antifuse material (18) separating a first conductor (12) and a second conductor (20). An insulating element (14) and another insulating element (16) further separate the first conductor (12) from the second conductor (20). The antifuse material (18) includes a dopant which raises the band gap and seals off paths in grain boundaries of the antifuse material (18) in order to limit leakage current from flowing between the first conductor (12) and the second conductor (20). When an interconnection is desired, a high voltage pulse is applied across the first conductor (12) and the second conductor (20) to initially break down the antifuse material (18). The breakdown of the antifuse material (18) causes a filament (22) to form between the first conductor (12) and the second conductor (20). The filament (22) creates a conduction path connecting the first conductor (12) and the second conductor (20) electrically together. Additional current is forced through the antifuse material (18) to permanently set the filament (22) in order to interconnect circuit elements coupled to the first conductor (12) and the second conductor (20).
Inventors
- 👤 David B. Spratt
- 👤 Kueing-Long Chen
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 21:04
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/49; H10W20/491; Y; Y10; Y10S; Y10S148/00; Y10S148/055
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
75 words
A method of controlling current flow in a circuit, comprising the steps of: forming a first conduction element; forming an antifuse material on said first conduction element, said antifuse material comprising microcrystalline silicon and a dopant material to reduce leakage current between and to said first conduction element; and forming a second conduction element on said antifuse material such that said second conduction element is separated from said first conduction element by said antifuse material.
Claim 2
Independent Claim
75 words
A method of controlling current flow in a circuit, comprising the steps of: forming a first conduction element; forming an antifuse material on said first conduction element, said antifuse material comprising microcrystalline silicon and a dopant material to reduce leakage current between and to said first conduction element; and forming a second conduction element on said antifuse material such that said second conduction element is separated from said first conduction element by said antifuse material.
Claim 3
Dependent Claim
31 words
The method of claim 1, further comprising the step of: placing an insulating material on said first conduction element to further separate said first conduction element from said second conduction element.
Claim 4
Dependent Claim
36 words
The method of claim 2, further comprising the step of: applying a voltage pulse across said first and second conduction elements to break down said antifuse material and cause current to flow between said conduction elements.
Claim 5
Dependent Claim
29 words
The method of claim 3, further comprising the step of: forcing current through said antifuse material to permanently establish an electrical connection between said first and second conduction elements.
Claim 6
Dependent Claim
26 words
The method of claim 4, further comprising the step of: programming a circuit having a plurality of said antifuse materials by breaking down selective antifuse materials.
Claim 7
Dependent Claim
27 words
The method of claim 1, wherein said microcrystalline silicon comprises hydrogenated microcrystalline silicon and wherein said dopant is selected from the group consisting of carbon and fluorine.
Claim 8
Independent Claim
40 words
A method of forming an antifuse between first and second conductors, comprising the steps of: forming said first conductor; depositing a mixture comprising microcrystalline silicon and a dopant on said first conductor; and forming said second conductor on said mixture.
Claim 9
Independent Claim
40 words
A method of forming an antifuse between first and second conductors, comprising the steps of: forming said first conductor; depositing a mixture comprising microcrystalline silicon and a dopant on said first conductor; and forming said second conductor on said mixture.
Claim 10
Dependent Claim
18 words
The method in accordance with claim 7 wherein said depositing step includes chemical vapor deposition of said mixture.
Claim 11
Dependent Claim
23 words
The method in accordance with claim 7 wherein said depositing step includes implanting said dopant into said microcrystalline silicon and annealing said antifuse.
Claim 12
Dependent Claim
15 words
The method in accordance with claim 7 wherein said microcrystalline silicon comprises hydrogenated microcrystalline silicon.
Claim 13
Dependent Claim
12 words
The method in accordance with claim 7 wherein said dopant comprises carbon.
Claim 14
Dependent Claim
12 words
The method in accordance with claim 7 wherein said dopant comprises fluorine.
Claim 15
Independent Claim
53 words
A method of forming an electrically conductive path between two spaced-apart conductors comprising the steps of: forming an antifuse in contact with said two conductors, said antifuse comprising a mixture of microcrystalline silicon and a dopant; and applying a voltage pulse between said first and second conductors sufficient to break down said antifuse.
Claim 16
Independent Claim
53 words
A method of forming an electrically conductive path between two spaced-apart conductors comprising the steps of: forming an antifuse in contact with said two conductors, said antifuse comprising a mixture of microcrystalline silicon and a dopant; and applying a voltage pulse between said first and second conductors sufficient to break down said antifuse.
Claim 17
Dependent Claim
27 words
The method in accordance with claim 13 further comprising the step of: forcing current through said antifuse to establish a permanent electrically conductive path between said conductors.
Claim 18
Dependent Claim
29 words
The method in accordance with claim 14 further comprising the step of: programming a circuit having a plurality of said antifuses by breaking down selective ones of said antifuses.
Claim 19
Dependent Claim
15 words
The method in accordance with claim 13 wherein said microcrystalline silicon comprises hydrogenated microcrystalline silicon.
Claim 20
Dependent Claim
12 words
The method in accordance with claim 13 wherein said dopant comprises carbon.
Claim 21
Dependent Claim
12 words
The method in accordance with claim 13 wherein said dopant comprises fluorine.
Claim 22
Dependent Claim
18 words
The method in accordance with claim 13 wherein said forming step includes chemical vapor deposition of said mixture.
Claim 23
Dependent Claim
23 words
The method in accordance with claim 13 wherein said forming step includes implanting said dopant into said microcrystalline silicon and annealing said antifuse.
References Cited (Backward Citations)
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