US5281554A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing a semiconductor device having a tantalum thin film
Assignee: Sharp Corp
•
Filing: 1993-04-20
•
Granted: 1994-01-25
•
Expires: 2013-04-20
Abstract
Abstract A method for producing a semiconductor device including forming an electrode or an electrode wiring by forming a tantalum thin film by sputtering is provided. In this method, a krypton gas in which nitrogen is mixed as a reactive gas is used as a sputtering gas, and a product of the pressure of the sputtering gas and a target-substrate distance is set in the range of 0.01 m.Pa to 0.08 m.Pa.
Inventors
- 👤 Yasunori Shimada
- 👤 Hiroshi Morimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:20
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01316; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/44; Y; Y10; Y10S; Y10S148/00; Y10S148/158
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
78 words
A method for producing a tantalum thin film electrode or electrode wiring for a semiconductor device, the method comprising: using a krypton gas in which nitrogen is mixed as a reactive gas as a sputtering gas, and conducting the sputtering at a sputtering gas pressure and with a target separated from the substrate such that a product of the pressure of the sputtering gas and a target-substrate distance is in a range of 0.01 m.Pa to 0.08 m.Pa.
Claim 2
Independent Claim
78 words
A method for producing a tantalum thin film electrode or electrode wiring for a semiconductor device, the method comprising: using a krypton gas in which nitrogen is mixed as a reactive gas as a sputtering gas, and conducting the sputtering at a sputtering gas pressure and with a target separated from the substrate such that a product of the pressure of the sputtering gas and a target-substrate distance is in a range of 0.01 m.Pa to 0.08 m.Pa.
Claim 3
Dependent Claim
23 words
The method of claim 1, further comprising applying to the target an input electrical power density of at least 3.0 W/cm 2 .
Claim 4
Dependent Claim
35 words
The method of claim 1, wherein the conducting step includes setting the pressure of the sputtering gas in a range of 2.0×10 -1 Pa to 7.0×10 -1 Pa when the target-substrate distance is 80 mm.
Claim 5
Dependent Claim
21 words
The method of claim 3, wherein the conducting step includes setting the pressure of the sputtering gas at 4.0×10 -1 Pa.
Claim 6
Dependent Claim
42 words
The method of claim 1, wherein the conducting step includes setting the pressure of the sputtering gas in a range of 0.7×10 -1 Pa to 4.0×10 -1 Pa when the target-substrate distance is in a range of 150 mm to 200 mm.
Claim 7
Dependent Claim
35 words
The method of claim 1, wherein the conducting step includes setting the pressure of the sputtering gas in a range of 2.0×10 -1 Pa to 7.0×10 -1 Pa when the target-substrate distance is 65 mm.
References Cited (Backward Citations)
US3558461A
Cited
US3763026A
Cited
US3714013A
Cited
US3775278A
Cited
US3878079A
Cited
US3869367A
Cited
US4042479A
Cited
US4988422A
Cited
US5068022A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-01-24 | 1997-07-26 | 1998-01-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-01-24 | 2001-07-26 | 2002-01-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-01-24 | 2005-07-26 | 2006-01-25 | $7700.00 | Window Closed / Lapsed |