US4042479A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Thin film resistor and a method of producing the same
Assignee: Fujitsu Ltd
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Filing: 1976-09-14
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Granted: 1977-08-16
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Expires: 1996-09-14
Abstract
Abstract The present invention provides a new thin film resistor to be utilized as an electronic element, which consists of tantalum, aluminum and nitrogen. This new thin film resistor has a higher value of sheet resistance and higher stability than conventional thin film resistors. The present invention also provides a method of producing the thin film resistor by a sputtering process carried out with a target made of tantalum and aluminum in an atmosphere of argon and nitrogen thereby forming a thin film on a substrate.
Inventors
- 👤 Jun'ichiro Yamazaki
- 👤 Takeshi Kamo
- 👤 Yoshiichi Saito
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 12:10
CPC Classifications
H; H01; H01C; H01C7/00; H01C7/006; C; C23; C23C; C23C14/00; C23C14/0021; C23C14/0036; H01C17/00; H01C17/06; H01C17/075; H01C17/12
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
217 words
A thin film resistor of essentially Ta--Al--N composition having a specific resistivity in the range of from 400 to 1000μΩcm, a temperature coefficient of resistivity in the range of from 0 to -300 ppm/° C., and a characteristic of resistivity change in ageing of less than 2000 ppm, wherein said thin film resistor is produced by a process comprising the steps of: providing an atmosphere consisting essentially of nitrogen at a partial pressure in the range from 2 × 10 - 4 to 10 × 10 - 4 Torr. and an inert gas; placing a substrate within said atmosphere; providing a target having a composition consisting essentially of tantalum and aluminum, said target composition including said tantalum covering the surfaces of said target within the range of from 30 to 80%, and; performing a sputtering process on said target within said atmosphere to form said thin film resistor having a thickness in the range from 300 to 1500A under conditions which cause said formed thin film resistor to have said specific resistivity and said temperature coefficient of resistivity within said corresponding ranges; and heat treating said formed thin film resistor at a temperature of not more than 250° C. to cause said thin film resistor to have said characteristic of resistivity change in ageing within said range.
Claim 2
Dependent Claim
217 words
A thin film resistor of essentially Ta--Al--N composition having a specific resistivity in the range of from 400 to 1000μΩcm, a temperature coefficient of resistivity in the range of from 0 to -300 ppm/° C., and a characteristic of resistivity change in ageing of less than 2000 ppm, wherein said thin film resistor is produced by a process comprising the steps of: providing an atmosphere consisting essentially of nitrogen at a partial pressure in the range from 2 × 10 - 4 to 10 × 10 - 4 Torr. and an inert gas; placing a substrate within said atmosphere; providing a target having a composition consisting essentially of tantalum and aluminum, said target composition including said tantalum covering the surfaces of said target within the range of from 30 to 80%, and; performing a sputtering process on said target within said atmosphere to form said thin film resistor having a thickness in the range from 300 to 1500A under conditions which cause said formed thin film resistor to have said specific resistivity and said temperature coefficient of resistivity within said corresponding ranges; and heat treating said formed thin film resistor at a temperature of not more than 250° C. to cause said thin film resistor to have said characteristic of resistivity change in ageing within said range.
Claim 3
Independent Claim
220 words
A method of producing a thin film resistor, with a high degree of reproductivity, of essentially Ta--Al--N composition having a specific resistivity in a range of from 400 to 1000μΩcm, a specific temperature coefficient of resistance in a range of from 0 to -300 ppm/° C., comprising the steps of: providing an atmosphere consisting essentially of an inert gas, and nitrogen, wherein said nitrogen is at a partial pressure in the range from 2 × 10 - 4 to 10 × 10 - 4 Torr; placing a substrate within said atmosphere; providing a target having a composition consisting essentially of tantalum and aluminum, said target composition including said tantalum covering the surface of said target within the range of from 30 to 80%; performing a sputtering process on said target within said atmosphere to form said thin film resistor having a thickness in the range of from 300 to 1500A under the sputtering condition so that said thin film resistor exhibits a plateau characteristic in a plot of said temperature coefficient of resistance versus nitrogen partial pressure in said nitrogen partial pressure range; and heat treating said formed thin film resistor at a temperature of not more than 250° C. to provide said thin film resistor with a stabilized specific resistance change in ageing characteristic of less than 2000 ppm.
Claim 4
Independent Claim
220 words
A method of producing a thin film resistor, with a high degree of reproductivity, of essentially Ta--Al--N composition having a specific resistivity in a range of from 400 to 1000μΩcm, a specific temperature coefficient of resistance in a range of from 0 to -300 ppm/° C., comprising the steps of: providing an atmosphere consisting essentially of an inert gas, and nitrogen, wherein said nitrogen is at a partial pressure in the range from 2 × 10 - 4 to 10 × 10 - 4 Torr; placing a substrate within said atmosphere; providing a target having a composition consisting essentially of tantalum and aluminum, said target composition including said tantalum covering the surface of said target within the range of from 30 to 80%; performing a sputtering process on said target within said atmosphere to form said thin film resistor having a thickness in the range of from 300 to 1500A under the sputtering condition so that said thin film resistor exhibits a plateau characteristic in a plot of said temperature coefficient of resistance versus nitrogen partial pressure in said nitrogen partial pressure range; and heat treating said formed thin film resistor at a temperature of not more than 250° C. to provide said thin film resistor with a stabilized specific resistance change in ageing characteristic of less than 2000 ppm.
Claim 5
Independent Claim
206 words
A method of producing a thin film resistor, of essentially Ta--Al--N composition having a specific resistivity in a range of from 400 to 1000μΩcm, a specific temperature coefficient of resistance in a range of from 0 to -300ppm/° C., comprising the steps of: providing an atmosphere consisting essentially of an inert gas and nitrogen wherein said nitrogen is at a partial pressure in the range of from 2 × 10 - 4 to 10 × 10 - 4 Torr.; placing a substrate within said atmosphere; providing a target having a composition consisting essentially of tantalum and aluminum, said target composition including said tantalum covering the surface of said target within the range of from 30 to 80%; performing a sputtering process on said target within said atmosphere to form said thin film resistor having a thickness in the range of from 300 to 1500A under sputtering conditions which cause said formed thin film resistor to have said specific resistivity and said specific temperature coefficient of resistance in said corresponding ranges; and heat treating said formed thin film resistor at a temperature of not more than 250° C. to provide said thin film resistor with a stabilized specific resistance change in ageing characteristic of less than 2000ppm.
Claim 6
Independent Claim
206 words
A method of producing a thin film resistor, of essentially Ta--Al--N composition having a specific resistivity in a range of from 400 to 1000μΩcm, a specific temperature coefficient of resistance in a range of from 0 to -300ppm/° C., comprising the steps of: providing an atmosphere consisting essentially of an inert gas and nitrogen wherein said nitrogen is at a partial pressure in the range of from 2 × 10 - 4 to 10 × 10 - 4 Torr.; placing a substrate within said atmosphere; providing a target having a composition consisting essentially of tantalum and aluminum, said target composition including said tantalum covering the surface of said target within the range of from 30 to 80%; performing a sputtering process on said target within said atmosphere to form said thin film resistor having a thickness in the range of from 300 to 1500A under sputtering conditions which cause said formed thin film resistor to have said specific resistivity and said specific temperature coefficient of resistance in said corresponding ranges; and heat treating said formed thin film resistor at a temperature of not more than 250° C. to provide said thin film resistor with a stabilized specific resistance change in ageing characteristic of less than 2000ppm.
References Cited (Backward Citations)
US3763026A
Cited
US3737343A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1980-08-15 | 1981-02-14 | 1981-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1984-08-15 | 1985-02-14 | 1985-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1988-08-15 | 1989-02-14 | 1989-08-16 | $7700.00 | Window Closed / Lapsed |