US3869367A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for manufacturing a conductive film for a thin film integrated circuit device
Assignee: NEC Corp
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Filing: 1973-01-03
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Granted: 1975-03-04
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Expires: 1993-01-03
Abstract
Abstract A low specific resistive conductive thin film for a thin film integrated circuit includes a high conductivity metal film formed on an insulating base plate. An insulator film is formed over that metal film. A metal succeptible to being anodically oxidized is formed over the insulator film and penetrates through fine pores in the insulator film to make electrical contact with the first-mentioned metal film.
Inventors
- 👤 Akio Sato
- 👤 Shigehiko Sato
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:57
CPC Classifications
H; H01; H01C; H01C17/00; H01C17/06; H01C17/075; H01C17/12; C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/35; H10; H10N; H10N97/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
127 words
A PROCESS FOR MANUFACTURING A HIGHLY CONDUCTIVE THIN FILM FOR USE IN THIN FILM INTEGRATED CIRCUITS COMPRISING THE STEPS OF: FORMING A FILM OF A FIRST HIGH-CONDUCTIVITY METAL ON AN INSULATOR BASE PLATE, FORMING A DIFFUSION PREVENTING INSULATOR FILM ON SAID METAL FILM, AND SPUTTERING A SECOND METAL SUSCEPTIBLE TO ANODIC FILM FORMING OXIDATION ONTO SAID INSULATOR FILM, SAID INSULATOR FILM BEING OF SUCH A THICKNESS AS TO PERMIT PARTICLES OF SAID SECOND METAL TO PENETRATE SAID INSULATOR FILM AT A MULTIPLICITY OF LOCATIONS, WHILE LEAVING INTACT A DUFFICIENT INSULATING FILM TO SUBSTANTIALLY PREVENT THE FORMATION OF AN ALLOY OF SAID FIRST AND SECOND METALS, WHEREBY A COMPOSITE FILM IS PRODUCED HAVING A SPECIFIC CONDUCTIVITY HIGHER THAN THAT OF EITHER OF SAID FIRST OR SAID SECOND METALS.
Claim 2
Dependent Claim
127 words
A PROCESS FOR MANUFACTURING A HIGHLY CONDUCTIVE THIN FILM FOR USE IN THIN FILM INTEGRATED CIRCUITS COMPRISING THE STEPS OF: FORMING A FILM OF A FIRST HIGH-CONDUCTIVITY METAL ON AN INSULATOR BASE PLATE, FORMING A DIFFUSION PREVENTING INSULATOR FILM ON SAID METAL FILM, AND SPUTTERING A SECOND METAL SUSCEPTIBLE TO ANODIC FILM FORMING OXIDATION ONTO SAID INSULATOR FILM, SAID INSULATOR FILM BEING OF SUCH A THICKNESS AS TO PERMIT PARTICLES OF SAID SECOND METAL TO PENETRATE SAID INSULATOR FILM AT A MULTIPLICITY OF LOCATIONS, WHILE LEAVING INTACT A DUFFICIENT INSULATING FILM TO SUBSTANTIALLY PREVENT THE FORMATION OF AN ALLOY OF SAID FIRST AND SECOND METALS, WHEREBY A COMPOSITE FILM IS PRODUCED HAVING A SPECIFIC CONDUCTIVITY HIGHER THAN THAT OF EITHER OF SAID FIRST OR SAID SECOND METALS.
Claim 3
Dependent Claim
37 words
The process claimed in claim 1, wherein said first metal is aluminum, said insulator film is formed by the anodic oxidation of said first metal, and the thickness of said insulator film is 50 to 2200 A.
Claim 4
Dependent Claim
27 words
The process claimed in claim 1, wherein said first metal is aluminum, and said insulator film is silicon dioxide having a thickness of 200 to 5000 A.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-03-03 | 1978-09-02 | 1979-03-04 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-03-03 | 1982-09-02 | 1983-03-04 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-03-03 | 1986-09-02 | 1987-03-04 | $7700.00 | Window Closed / Lapsed |