Patent US5278093A successfully refreshed from Google Patents.
US5278093A
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Method for forming semiconductor thin film
Assignee: Canon Inc
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Filing: 1992-07-29
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Granted: 1994-01-11
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Expires: 2012-07-29
Abstract
Abstract A method for forming a semiconductor thin film comprises crystallizing an amorphous silicon thin film by a first thermal treatment at 700° C. or lower for ten hours or longer and carrying out a second thermal treatment at 1200° C. or higher in which a lamp light is radiated to the crystallized thin film.
Inventors
- 👤 Takao Yonehara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 15:15
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/22; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2921; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3456; H10P14/38; H10P14/3802; Y; Y10; Y10S; Y10S148/00; Y10S148/154
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
133 words
A method for forming a semiconductor thin film which comprises: (i) crystallizing an amorphous thin film formed on an amorphous insulating surface of a substrate by a first thermal treatment at 700° C. or lower for at least ten hours to form a crystallized thin film having a grain size of at least 1 μm; (ii) providing a capping material on said crystallized thin film; and (iii) rapidly heating said crystallized thin film to a temperature of 1200° C. or higher by irradiating said crystallized thin film with a lamp light and conducting a second thermal treatment at 1200° C. or higher by keeping said crystallized thin film at a temperature of 1200° C. or higher for about 1 to 3 minutes while maintaining said grain size, thereby forming said semiconductor thin film.
Claim 2
Independent Claim
133 words
A method for forming a semiconductor thin film which comprises: (i) crystallizing an amorphous thin film formed on an amorphous insulating surface of a substrate by a first thermal treatment at 700° C. or lower for at least ten hours to form a crystallized thin film having a grain size of at least 1 μm; (ii) providing a capping material on said crystallized thin film; and (iii) rapidly heating said crystallized thin film to a temperature of 1200° C. or higher by irradiating said crystallized thin film with a lamp light and conducting a second thermal treatment at 1200° C. or higher by keeping said crystallized thin film at a temperature of 1200° C. or higher for about 1 to 3 minutes while maintaining said grain size, thereby forming said semiconductor thin film.
Claim 3
Dependent Claim
22 words
A method for forming a semiconductor thin film according to claim 1, wherein said capping material is silicon oxide or silicon nitride.
Claim 4
Dependent Claim
26 words
A method for forming a semiconductor thin film according to claim 2, wherein the thickness of said capping material is from 10 nm to 100 nm.
Claim 5
Dependent Claim
29 words
A method for forming a semiconductor thin film according to claim 2, wherein the temperature rising rate in the second thermal treatment is from 100° C./sec to 500° C./sec.
Claim 6
Dependent Claim
26 words
A method for forming a semiconductor thin film according to Claim 1, wherein the thickness of said capping material is from 10 nm to 100 nm.
Claim 7
Dependent Claim
29 words
A method for forming a semiconductor thin film according to claim 5, wherein the temperature rising rate to the second thermal treatment is from 100° C./sec. to 500° C./sec.
Claim 8
Dependent Claim
30 words
A method for forming a semiconductor thin film according to Claim 1, wherein the temperature rising rate to the second thermal treatment temperature is from 100° C./sec to 500° C./sec.
Claim 9
Dependent Claim
18 words
A method according to claim 1, wherein the amorphous material thin film is an amorphous silicon thin film.
Claim 10
Dependent Claim
19 words
A method according to claim 1, wherein the amorphous material thin film is formed on the substrate by deposition.
Claim 11
Dependent Claim
30 words
A method according to claim 1, wherein the amorphous thin film is formed by making a polycrystalline material thin film formed on said amorphous insulating surface of the substrate amorphous.
Claim 12
Independent Claim
136 words
A method for forming a semiconductor thin film which comprises: (i) subjecting an amorphous material thin film formed on an amorphous insulating surface of a substrate to a first thermal treatment at 700° C. or lower for at least ten hours to generate a nucleus in the amorphous material thin film; (ii) growing the nucleus, thereby crystallizing the amorphous material thin film to form a crystallized thin film having a grain size of at least 1 μm; (iii) providing a capping material on said crystallized thin film; and (iv) rapidly heating said crystallized thin film to a temperature of 1200° C. or higher and subjecting said crystallized thin film to a second thermal treatment at 1200° C. or higher for about 1 to 3 minutes while maintaining said grain size, thereby forming said semiconductor thin film.
Claim 13
Independent Claim
136 words
A method for forming a semiconductor thin film which comprises: (i) subjecting an amorphous material thin film formed on an amorphous insulating surface of a substrate to a first thermal treatment at 700° C. or lower for at least ten hours to generate a nucleus in the amorphous material thin film; (ii) growing the nucleus, thereby crystallizing the amorphous material thin film to form a crystallized thin film having a grain size of at least 1 μm; (iii) providing a capping material on said crystallized thin film; and (iv) rapidly heating said crystallized thin film to a temperature of 1200° C. or higher and subjecting said crystallized thin film to a second thermal treatment at 1200° C. or higher for about 1 to 3 minutes while maintaining said grain size, thereby forming said semiconductor thin film.
Claim 14
Dependent Claim
19 words
A method according to claim 11, wherein the second thermal treatment is carried out by use of a lamp.
Claim 15
Dependent Claim
15 words
A method according to claim 11, wherein the crystallized amorphous material thin film is polycrystalline.
Claim 16
Dependent Claim
28 words
A method according to claim 11, wherein the second thermal treatment is carried out after setting a desired temperature at a rate of 100° C./sec to 500° C./sec.
Claim 17
Dependent Claim
22 words
A method for forming a semiconductor thin film according to claim 11, wherein said capping material is silicon oxide or silicon nitride.
Claim 18
Dependent Claim
26 words
A method for forming a semiconductor thin film according to claim 15, wherein the thickness of said capping material is from 10 nm to 100 nm.
Claim 19
Dependent Claim
26 words
A method for forming a semiconductor thin film according to claim 11, wherein the thickness of said capping material is from 10 nm to 100 nm.
Claim 20
Independent Claim
130 words
A method for forming a semiconductor thin film which comprises (i) subjecting an amorphous material thin film formed on an amorphous insulating surface of a substrate to a first thermal treatment at 700° C. or lower for at least ten hours to generate a nucleus in the amorphous material thin film; (ii) growing the nucleus, thereby crystallizing the amorphous material thin film to form a crystallized thin film having a grain size of at least 1 μm; (iii) rapidly heating said crystallized thin film to a temperature of 1200° C. or higher and subjecting said crystallized thin film to a second thermal treatment by keeping said crystallized thin film at 1200° C. or higher for 1 to 3 minutes while maintaining said grain size, thereby forming said semiconductor thin film.
Claim 21
Independent Claim
130 words
A method for forming a semiconductor thin film which comprises (i) subjecting an amorphous material thin film formed on an amorphous insulating surface of a substrate to a first thermal treatment at 700° C. or lower for at least ten hours to generate a nucleus in the amorphous material thin film; (ii) growing the nucleus, thereby crystallizing the amorphous material thin film to form a crystallized thin film having a grain size of at least 1 μm; (iii) rapidly heating said crystallized thin film to a temperature of 1200° C. or higher and subjecting said crystallized thin film to a second thermal treatment by keeping said crystallized thin film at 1200° C. or higher for 1 to 3 minutes while maintaining said grain size, thereby forming said semiconductor thin film.
Claim 22
Dependent Claim
19 words
A method according to claim 18, wherein said second thermal treatment is carried out by use of a lamp.
Claim 23
Dependent Claim
14 words
A method according to claim 18, said crystallized amorphous material thin film is polycrystalline.
Claim 24
Dependent Claim
28 words
A method according to claim 18, wherein said second thermal treatment is carried out after setting a desired temperature at a rate of 100° C./sec to 500° C./sec.
Claim 25
Dependent Claim
22 words
A method according to claim 18, wherein a capping material is provided on said crystallized thin film before said second thermal treatment.
Claim 26
Dependent Claim
16 words
A method according to claim 22, wherein said capping material is silicon oxide or silicon nitride.
Claim 27
Dependent Claim
20 words
A method according to claim 22, wherein the thickness of said capping material is from 10 nm to 100 nm.
Claim 28
Dependent Claim
21 words
A method according to claim 22, said capping material is provided to prevent the surface unevenness of said crystallized thin film.
References Cited (Backward Citations)
US4331485A
Cited
US4356384A
Cited
JPS5854606A
Cited
US4617066A
Cited
US4621413A
Cited
US4808546A
Cited
US4814292A
Cited
US4752590A
Cited
US4992846A
Cited
JPS63253616A
Cited
WO1989004550A2
Cited
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