Patent US5274268A successfully refreshed from Google Patents.
← Back to Patent Explorer
US5274268A Expired / Lapsed US ⏱️ 0.0 years remaining

Electric circuit having superconducting layered structure

Assignee: Semiconductor Energy Laboratory Co Ltd
•
Filing: 1991-11-25
•
Granted: 1993-12-28
•
Expires: 2011-11-25
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract An electric circuit is provided on a semiconductor substrate with a supercoducting film. The surfaces being in contact with the superconducting film are made of heat-resistant non-oxide insulating materials so that the performance of the superconducting film is not degraded.

Inventors

  • 👤 Shumpei Yamazaki

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 14:17
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4484; H10D; H10D64/00; H10D64/60; H10D64/608; H10N; H10N60/00; H10N60/01; H10N60/0268; H10N60/0296; H10N60/0576; H10N60/0632; H10N60/0661; H10N60/0688; H10N60/0716; H10W20/01; H10W20/031; H10W20/064; H10W70/00; H10W70/60; H10W70/62; H10W70/66; H10W70/668; Y; Y10; Y10S; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/703

Claims Analysis

Total Claims: 15
Claim 1
Independent Claim 89 words
An electronic device comprising: a semiconductor substrate; a lead made of an oxide superconducting material formed above said substrate; and an insulating layer formed in contact with at least a portion of said lead, a portion of said insulating layer located above said superconducting lead to effect insulation of the lead from other structures of the device, wherein the surface of the insulating layer which contacts said lead is made of a non-oxide insulating material, whereby said insulating layer surface is rendered substantially noninteractive with said oxide superconducting material.
Claim 2
Dependent Claim 89 words
An electronic device comprising: a semiconductor substrate; a lead made of an oxide superconducting material formed above said substrate; and an insulating layer formed in contact with at least a portion of said lead, a portion of said insulating layer located above said superconducting lead to effect insulation of the lead from other structures of the device, wherein the surface of the insulating layer which contacts said lead is made of a non-oxide insulating material, whereby said insulating layer surface is rendered substantially noninteractive with said oxide superconducting material.
Claim 3
Dependent Claim 20 words
The device of claim 1 wherein a further portion of said insulating layer is interposed between said substrate and lead.
Claim 4
Dependent Claim 25 words
The device of claim 1 wherein said insulating layer comprises a material selected from the group consisting of silicon nitride, aluminum nitride, and titanium nitride.
Claim 5
Dependent Claim 12 words
The device of claim 1 wherein said insulating layer comprises a carbide.
Claim 6
Dependent Claim 22 words
The device of claim 4 wherein said carbide comprises a material selected from the group consisting of silicon carbide and titanium carbide.
Claim 7
Dependent Claim 17 words
The device of claim 1 wherein at least one active element is formed within said semiconductor substrate.
Claim 8
Dependent Claim 18 words
The device of claim 6 wherein said active element is one of an IG-FET, bipolar transistor, and SIT.
Claim 9
Dependent Claim 11 words
The device of claim 1 wherein said semiconductor substrate comprises silicon.
Claim 10
Dependent Claim 11 words
The device of claim 1 wherein said semiconductor substrate comprises GaAs.
Claim 11
Dependent Claim 35 words
The device of claim 6 wherein said insulating layer comprises an insulating film and said superconducting lead is electrically connected with a terminal of said active element through a hole opened in said insulating film.
Claim 12
Dependent Claim 22 words
The device of claim 1 wherein insulating layer has a laminated structure comprising an oxide insulating layer and a non-oxide insulating layer.
Claim 13
Dependent Claim 85 words
The device of claim 1 wherein said oxide superconducting material is represented by a general formula: (A.sub.1-x B.sub.x).sub.y Cu.sub.z O.sub.w where A comprises at least one element from Group IIIa of the Periodic Table, B comprises at least one element from Group IIa of the Periodic Table, and x has a value in the range from 0-1, y has a value in the range from 2-4, z has a value in the range from 1-4, and w has a value in the range from 4-10.
Claim 14
Dependent Claim 18 words
The device of claim 12 wherein said oxide superconducting material is YBa 2 Cu 3 O 6-8 .
Claim 15
Dependent Claim 85 words
The device of claim 1 wherein said oxide superconducting material is represented by a general formula: (A.sub.1-x B.sub.X).sub.y Cu.sub.z O.sub.w where A comprises at least one element from Group Vb of the Periodic Table, B comprises at least one element from Group IIa of the Periodic Table, and x has a value in the range from 0.3-1, y has a value in the range from 2-4, z has a value in the range from 1-4, and w has a value in the range from 4-10.

References Cited (Backward Citations)

JPS58141572A Cited
JPS59208821A Cited
JPS6270295A Cited
JPS62171995A Cited
US4960751A Cited
US5001108A Cited
US4837609A Cited
US4940693A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1996-12-27 1997-06-28 1997-12-28 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2000-12-27 2001-06-28 2001-12-28 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2004-12-27 2005-06-28 2005-12-28 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag