US5270253A — Method of producing semiconductor device

Claim 1

Independent Claim 154 words

A method of producing a semiconductor device comprising: a first step of forming an electrode portion on a wafer to obtain an electrical contact with a substrate; a second step of forming a passivation film on said wafer except for said electrode portion; a third step of forming an insulating film of predetermined thickness on the entire surface of said wafer; a fourth step of removing a portion of said insulating film to form a concave portion on said electrode portion; a fifth step of depositing conductive material in said concave portion up to a substantially constant height and contacting said electrode portion, further including depositing conductive material on the insulating film; and a sixth step of removing said conductive material from said insulating film by conducting a uniform etching on the surface of said conductive material to produce a projecting conductor of said conductive material which is used for bonding to a substrate.

Claim 2

Independent Claim 154 words

A method of producing a semiconductor device comprising: a first step of forming an electrode portion on a wafer to obtain an electrical contact with a substrate; a second step of forming a passivation film on said wafer except for said electrode portion; a third step of forming an insulating film of predetermined thickness on the entire surface of said wafer; a fourth step of removing a portion of said insulating film to form a concave portion on said electrode portion; a fifth step of depositing conductive material in said concave portion up to a substantially constant height and contacting said electrode portion, further including depositing conductive material on the insulating film; and a sixth step of removing said conductive material from said insulating film by conducting a uniform etching on the surface of said conductive material to produce a projecting conductor of said conductive material which is used for bonding to a substrate.

Claim 3

Dependent Claim 55 words

A method of producing a semiconductor device as defined in claim 1, which further includes after said second step a step of producing on said electrode portion a barrier metal layer comprising a single layer or a multi layer of chrome, copper, nickel, titanium, silver, gold, or a metal alloy including any of these metals.

Claim 4

Dependent Claim 30 words

A method of producing a semiconductor device as defined in claim 1, wherein said electrode portion comprises aluminum, a high melting point metal, or a high melting point metal silicide.

Claim 5

Dependent Claim 20 words

A method of producing a semiconductor device as defined in claim 1, wherein said insulating film comprises a dry film.

Claim 6

Dependent Claim 27 words

A method of producing a semiconductor device as defined in claim 1, wherein said conductive material comprises a metal, a metal compound, or a conductive high polymer.

Claim 7

Dependent Claim 13 words

The method of claim 1 wherein the fourth step is performed by photolithography.

Claim 8

Dependent Claim 14 words

The method of claim 1 wherein the fifth step is performed by spin coating.

Claim 9

Independent Claim 119 words

The method of producing a semiconductor device comprising the steps of: (a) forming an electrode portion on a wafer to obtain electrical contact with a substrate; (b) forming a passivation film on said wafer except for an electrode portion; (c) forming an insulating film on the entire surface of the wafer; (d) removing a portion of said insulating film to form a concave portion; (e) depositing conductive material in said concave portion and as a flat surface on the insulating film; and (f) removing the flat surface of the conductive material on the insulating film by uniform etching so as to produce a projecting conductor of said conductive material which is to be used for bonding to a substrate.

Claim 10

Independent Claim 119 words

The method of producing a semiconductor device comprising the steps of: (a) forming an electrode portion on a wafer to obtain electrical contact with a substrate; (b) forming a passivation film on said wafer except for an electrode portion; (c) forming an insulating film on the entire surface of the wafer; (d) removing a portion of said insulating film to form a concave portion; (e) depositing conductive material in said concave portion and as a flat surface on the insulating film; and (f) removing the flat surface of the conductive material on the insulating film by uniform etching so as to produce a projecting conductor of said conductive material which is to be used for bonding to a substrate.

Claim 11

Dependent Claim 11 words

The method of claim 8 wherein the conductive material is solder.

Claim 12

Dependent Claim 18 words

The method of claim 8 wherein, substantially all of said insulating film is also removed in step (f).

Claim 13

Dependent Claim 63 words

The method of claim 13, wherein the film formed in step (c) is of a thickness of 50 to 500 microns; and in step (e) the conductive material completely fills the concave portion so that when substantially all of said insulating film is removed a conductive bump of a height sufficient to effectively electrically connect the device to a substrate will be formed.

Claim 14

Independent Claim 157 words

The method of producing a semiconductor device that includes a spacer and a projecting terminal for electrical attachment to a substrate comprising the steps of: (a) forming an electrode portion on a wafer to obtain electrical contact with a substrate; (b) forming a passivation film on said wafer except for an electrode portion; (c) forming an insulating film on the entire surface of the wafer; (d) removing a portion of said insulating film to form a concave portion; (e) depositing conductive material in said concave portion and as a flat surface on the insulating film; and (f) removing the flat surface of the conductive material on the insulating film by uniform etching thereby forming a projecting terminal of said conductive material beyond the insulating film, so that the semiconductor device can be bonded to a substrate by the use of the projecting terminal while using the insulating film as a spacer between the device and the substrate.

Claim 15

Independent Claim 157 words

The method of producing a semiconductor device that includes a spacer and a projecting terminal for electrical attachment to a substrate comprising the steps of: (a) forming an electrode portion on a wafer to obtain electrical contact with a substrate; (b) forming a passivation film on said wafer except for an electrode portion; (c) forming an insulating film on the entire surface of the wafer; (d) removing a portion of said insulating film to form a concave portion; (e) depositing conductive material in said concave portion and as a flat surface on the insulating film; and (f) removing the flat surface of the conductive material on the insulating film by uniform etching thereby forming a projecting terminal of said conductive material beyond the insulating film, so that the semiconductor device can be bonded to a substrate by the use of the projecting terminal while using the insulating film as a spacer between the device and the substrate.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1996-12-13	1997-06-14	1997-12-14	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2000-12-13	2001-06-14	2001-12-14	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2004-12-13	2005-06-14	2005-12-14	$7700.00	Window Closed / Lapsed

Method of producing semiconductor device

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