Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To contrive an increase in adhesive strength, a reduction in thermal resistance, the improvement of reliability by improving the flatness of a multilayer plating layer, by narrowing the opening section of a surface mask layer for selective plating than the opening section of an underlaid mask layer. CONSTITUTION:A source electrode 3, a drain electrode, and a gate electrode are deposited and formed on the surface of an N type GaAs semiconductor layer 2 grown on a semi-insulation GaAs substrate 1 and a part on the source electrode 3 is left and the other part is coated with an underlaid resist layer 4, furthermore, an underlying metal layer 5 for electrolytic plating is formed. After that, a surface resist layer 6 having an opening is formed inside the level difference section of the underlaid resist layer 4 and the underlying metal 5 for electrolytic plating on the source electrode 3. After forming a thick plating layer 7 at the opening section of the surface resist layer 6 by an electrolytic plating method, the surface resist layer 6, the underlying metal layer 5 for electrolytic plating, and the underlaid resist layer 4 are successively removed.

Inventors

• 👤 Manabu Watase
• 👤 Michihiro Kobiki
• 👤 Kazuaki Segawa
• 👤 Takeshi Suzuki

Bibliographic Details