Manufacture of semiconductor device

Abstract

Abstract PURPOSE:To form a high bump (higher than 10mum), by combining a two-layer resist lift-off method and an evaporating film, and manufacturing the face-down bonding-bump. CONSTITUTION:A passivation film 3 is attached to the surface of a substrate 1 including a base electrode 2 to the thickness of 5mum. The passivation film 3 on the base electrode 2 is removed by a dry etching method and the like, and two- layer resist films 4 and 5 are formed. Then, a bump metal is evaporated and two-layer resist lift-off is performed. The possivation film 3 is further etched. Thus a bump 6 is formed. The height of the obtained bump (h) becomes happrox.=d4+ d5+(do-dp). The height can be made high in comparison with the height obtained by a conventional method.

Inventors

• 👤 Shoji Nomura
• 👤 昭司 野村
• 👤 Toru Maekawa
• 👤 前川　通

Bibliographic Details