Patent US5270247A successfully refreshed from Google Patents.
US5270247A
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US
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Atomic layer epitaxy of compound semiconductor
Assignee: Fujitsu Ltd
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Filing: 1992-07-08
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Granted: 1993-12-14
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Expires: 2012-07-08
Abstract
Abstract A heterojunction between In-containing compound semiconductors in which the interface thereof is controlled at an atom level is provided by a process of atomic layer epitaxy (ALE) in which hydrogen gas is utilized as a carrier gas and as a purge gas for a separation of source gases. The time for which the purge gas is supplied can be utilized for controlling the ALE.
Inventors
- 👤 Yoshiki Sakuma
- 👤 Masashi Ozeki
- 👤 Nobuyuki Ohtuka
- 👤 Kunihiko Kodama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:58
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2909; H10P14/24; H10P14/2911; H10P14/32; H10P14/3242; H10P14/3244; H10P14/3251; H10P14/3252; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3418; H10P14/3421; Y; Y10; Y10S; Y10S148/00; Y10S148/048; Y10S148/072
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
160 words
A process for growing a crystalline compound semiconductor, comprising the steps of: heating a crystalline substrate to a predetermined temperature in a vacuum chamber, and at said predetermined temperature of the crystalline substrate and in the following sequence: supplying a first source gas for a III-group element containing an organic In compound diluted with hydrogen over said crystalline substrate under a predetermined pressure, discharging the first source gas, supplying a second source gas for a first V-group element over said crystalline substrate under a predetermined pressure, discharging the second source gas, supplying a third source gas for a III-group element containing an organic In compound diluted with hydrogen over said crystalline substrate under a predetermined pressure, discharging the third source gas, supplying a fourth source for a second V-group element over said crystalline substrate under a predetermined pressure, and discharging the forth source gas, wherein said first and second V-group elements have at least different compositions or different constituent elements.
Claim 2
Dependent Claim
160 words
A process for growing a crystalline compound semiconductor, comprising the steps of: heating a crystalline substrate to a predetermined temperature in a vacuum chamber, and at said predetermined temperature of the crystalline substrate and in the following sequence: supplying a first source gas for a III-group element containing an organic In compound diluted with hydrogen over said crystalline substrate under a predetermined pressure, discharging the first source gas, supplying a second source gas for a first V-group element over said crystalline substrate under a predetermined pressure, discharging the second source gas, supplying a third source gas for a III-group element containing an organic In compound diluted with hydrogen over said crystalline substrate under a predetermined pressure, discharging the third source gas, supplying a fourth source for a second V-group element over said crystalline substrate under a predetermined pressure, and discharging the forth source gas, wherein said first and second V-group elements have at least different compositions or different constituent elements.
Claim 3
Dependent Claim
59 words
A process according to claim 1, wherein said steps of supplying said first and second source gases are repeated to grow a first In-containing compound semiconductor layer on said crystalline substrate, before said steps of supplying said third and fourth source gases are repeated to grow a second In-containing compound semiconductor layer on said first In-containing compound semiconductor layer.
Claim 4
Dependent Claim
19 words
A process according to claim 1, wherein said predetermined temperature is in a range of 300° to 450° C.
Claim 5
Dependent Claim
16 words
A process according to claim 1, wherein said second and fourth source gases contain hydrogen gas.
Claim 6
Dependent Claim
39 words
A process according to claim 1, wherein said discharge of the first to fourth source gases are carried out by supplying a hydrogen gas over said crystalline substrate under a predetermined pressure to thereby purge away the source gas.
Claim 7
Dependent Claim
38 words
A process according to claim 1, wherein each of said predetermined pressures in said steps of supplying said first, second, third and fourth source gases is a certain pressure in a range of 5 torr to 1000 torr.
Claim 8
Dependent Claim
26 words
A process according to claim 1, wherein said organic compound of In is trimethyl indium and said second and fourth source gases comprise arsine and phosphine.
Claim 9
Dependent Claim
21 words
A process according to claim 2, wherein a heterojunction is one selected from the group consisting of InAs/InP, InAsP/InP and InAs/InAsP.
Claim 10
Dependent Claim
53 words
A process according to claim 5, wherein in said purging steps after the steps of supplying said second and fourth source gases to adsorp the first and second V-group elements on the underlying crystalline substrate, the hydrogen gas is supplied in a short time such that the adsorped V-group element is not desorped.
Claim 11
Dependent Claim
51 words
A process according to claim 9, wherein said second and fourth source gases comprise arsin and said short time satisfies the following formula: log t≦-(7.09/4.75)T+7.33 where T stands for a temperature of the crystalline substrate in ° C. and t stands for the time of supplying the hydrogen gas, in seconds.
Claim 12
Dependent Claim
109 words
A process for growing a crystalline compound semiconductor, comprising the steps of: supplying a III-group element source gas over a crystalline substrate, supplying a hydrogen gas over the crystalline substrate to purge away the III-group element source gas for a time, supplying a V-group element source gas over the crystalline substrate, and supplying a hydrogen gas over the crystalline substrate to purge away the V-group element source gas for a time, and repeating said steps to grow a III-V compound semiconductor layer on the crystalline substrate, wherein said time of supplying the hydrogen gas for said purge is controlled to thereby control a growth rate of said compound semiconductor.
Claim 13
Dependent Claim
109 words
A process for growing a crystalline compound semiconductor, comprising the steps of: supplying a III-group element source gas over a crystalline substrate, supplying a hydrogen gas over the crystalline substrate to purge away the III-group element source gas for a time, supplying a V-group element source gas over the crystalline substrate, and supplying a hydrogen gas over the crystalline substrate to purge away the V-group element source gas for a time, and repeating said steps to grow a III-V compound semiconductor layer on the crystalline substrate, wherein said time of supplying the hydrogen gas for said purge is controlled to thereby control a growth rate of said compound semiconductor.
Claim 14
Dependent Claim
116 words
A process for growing a crystalline compound semiconductor, comprising the steps of: supplying a III-group element source gas over a crystalline substrate, supplying a hydrogen gas over the crystalline substrate to purge away the III-group element source gas, supplying a V-group element source gas over the crystalline substrate, supplying a hydrogen gas over the crystalline substrate to purge away the V-group source gas, and supplying a dopant source over the crystalline substrate, and repeating the above steps to grow a doped III-V compound semiconductor layer on the crystalline substrate for a time, wherein said time of supplying the hydrogen gas is controlled to thus control a concentration of said dopant in said doped-III-V compound semiconductor layer.
Claim 15
Dependent Claim
116 words
A process for growing a crystalline compound semiconductor, comprising the steps of: supplying a III-group element source gas over a crystalline substrate, supplying a hydrogen gas over the crystalline substrate to purge away the III-group element source gas, supplying a V-group element source gas over the crystalline substrate, supplying a hydrogen gas over the crystalline substrate to purge away the V-group source gas, and supplying a dopant source over the crystalline substrate, and repeating the above steps to grow a doped III-V compound semiconductor layer on the crystalline substrate for a time, wherein said time of supplying the hydrogen gas is controlled to thus control a concentration of said dopant in said doped-III-V compound semiconductor layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-12-13 | 1997-06-14 | 1997-12-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-12-13 | 2001-06-14 | 2001-12-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-12-13 | 2005-06-14 | 2005-12-14 | $7700.00 | Window Closed / Lapsed |