Method for growing iii-v compound semiconductor crystal

Abstract

Abstract PURPOSE:To attain good surface morphology and uniformity even in case the III-V compound semiconductor crystal including aluminum is grown by causing the other substance layers to grow after growth of aluminum of a 2-molecule layer or 3-molecule layer by an atom layer epitaxy. CONSTITUTION:AsH3 is supplied to a reaction chamber where a GaAs substrate is arranged to cause As to flow on the surface of GaAs substrate, trymethylaluminum (TMA) is supplied in the amount equal to 2 times the surface density causing the substrate surface to adsorb aluminum after As is removed by supplying H2 to the reaction chamber, and then adequate amount of AsH3 is supplied after TMA remaining a little is exhausted by supplying H2 to the reaction chamber. In the case of As, the amount exceeding the necessary amount is not adsorbed by the self-limiting effect and the condition is stabilized again under the condition that As is applied to the surface. Thereby, Al As can be grown on the GaAs substrate having the surface index of 100.

Inventors

• 👤 Koji Mochizuki
• 👤 望月　孔二
• 👤 Masashi Ozeki
• 👤 尾関　雅志
• 👤 Nobuyuki Otsuka
• 👤 信幸 大塚

Bibliographic Details