US5268311A
Expired / Lapsed
US
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Method for forming a thin dielectric layer on a substrate
Assignee: International Business Machines Corp
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Filing: 1991-04-25
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Granted: 1993-12-07
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Expires: 2011-04-25
Abstract
Abstract Disclosed is a thin dielectric inorganic layer overlaying a substrate, and having a thickness of≦ about 20 nm and a defect density of≦ about 0.6 defects/cm 2 determined by BV measurements. Also disclosed is a method of forming such a layer, according to which a layer having the desired composition and thickness is formed on a substrate, followed by an ion implantation into the substrate through the layer with a dose of≧ about 10 15 ions/cm 2 and a subsequent anneal at a temperature of≧ about 500° C. for a predetermined time.
Inventors
- 👤 Wolfgang Euen
- 👤 Dieter Hagmann
- 👤 Hans-Jurgen Wildau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 04:15
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/01346; H10D64/01348; H10P; H10P95/00
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
121 words
A method for forming a dielectric inorganic layer, comprising the steps of: forming on a substrate a dielectric inorganic layer having a thickness ≦ about 20 nm, said layer consisting essentially of a material selected from the group consisting of silicon dioxide, silicon monoxide and silicon nitride, implating ions into said substrate through said layer with a does of ≦ about 10 15 /cm 2 , wherein said ions are implanted with an energy such that the projected range exceeds the thickness of said layer, and annealing said layer in an inert atmosphere at a temperature of ≧ about 500° C. for a predetermined time, so as to produce a resulting layer having a defect density of ≦0.6 defects/cm 2 .
Claim 2
Independent Claim
121 words
A method for forming a dielectric inorganic layer, comprising the steps of: forming on a substrate a dielectric inorganic layer having a thickness ≦ about 20 nm, said layer consisting essentially of a material selected from the group consisting of silicon dioxide, silicon monoxide and silicon nitride, implating ions into said substrate through said layer with a does of ≦ about 10 15 /cm 2 , wherein said ions are implanted with an energy such that the projected range exceeds the thickness of said layer, and annealing said layer in an inert atmosphere at a temperature of ≧ about 500° C. for a predetermined time, so as to produce a resulting layer having a defect density of ≦0.6 defects/cm 2 .
Claim 3
Dependent Claim
24 words
The method of claim 1, wherein said ions are selected from the group consisting of boron, phosphorous, arsenic, silicon, argon and BF 2 .
Claim 4
Dependent Claim
24 words
The method of claim 1, wherein said dielectric inorganic layer is formed by wet or dry thermal oxidation, cathode sputtering or chemical vapor deposition.
References Cited (Backward Citations)
DE146877C
Cited
US3540925A
Cited
CA1020849A
Cited
US3852120A
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US4001049A
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JPS5585041A
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JPS56125846A
Cited
JPS56125847A
Cited
US4701422A
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EP0260473A1
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US5051377A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-12-06 | 1997-06-07 | 1997-12-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-12-06 | 2001-06-07 | 2001-12-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-12-06 | 2005-06-07 | 2005-12-07 | $7700.00 | Window Closed / Lapsed |