US5051377A
Expired / Lapsed
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Method for forming a thin dielectric layer on a substrate
Assignee: International Business Machines Corp
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Filing: 1989-08-29
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Granted: 1991-09-24
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Expires: 2009-08-29
Abstract
Abstract Disclosed is a thin dielectric inorganic layer overlaying a substrate, and having a thickness of ≦ about 20 nm and a defect density of ≦ about 0.6 defects/cm 2 determined by BV measurements. Also disclosed is a method of forming such a layer, according to which a layer having the desired composition and thickness is formed on a substrate, followed by an ion implanatation into the substrate through the layer with a dose of ≧ about 10 15 ions/cm 2 and a subsequence anneal at a temperature of ≧ about 500° C. for a predetermined time.
Inventors
- 👤 Wolfgang Euen
- 👤 Dieter Hagmann
- 👤 Hans-Jurgen Wildau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 16:15
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/01346; H10D64/01348; H10P; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/91
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
69 words
A method for forming a silicon dioxide gate isolation layer having a thickness of ≦ about 10 nm on a silicon substrate, comprising the steps of: forming said silicon dioxide layer by thermal oxidation, implanting silicon ions into said substrate through said silicon dioxide layer with a dose of ≧ about 10 16 ions/cm 2 and annealing said silicon dioxide layer at a temperature of ≧ about 1150° C.
Claim 2
Independent Claim
69 words
A method for forming a silicon dioxide gate isolation layer having a thickness of ≦ about 10 nm on a silicon substrate, comprising the steps of: forming said silicon dioxide layer by thermal oxidation, implanting silicon ions into said substrate through said silicon dioxide layer with a dose of ≧ about 10 16 ions/cm 2 and annealing said silicon dioxide layer at a temperature of ≧ about 1150° C.
Claim 3
Dependent Claim
20 words
The method of claim 1, wherein said annealing step is carried out for about 10 seconds in an inert atmosphere.
Claim 4
Dependent Claim
40 words
The method of claim 2, wherein during the annealing step, the substrate temperature is ramped up at a rate of about 200° to about 400° C. per second, held at the anneal temperature for about 10 seconds and cooled rapidly.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1994-09-23 | 1995-03-25 | 1995-09-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1998-09-23 | 1999-03-25 | 1999-09-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2002-09-23 | 2003-03-25 | 2003-09-24 | $7700.00 | Window Closed / Lapsed |