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US5266816A
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Polysilicon thin film semiconductor device containing nitrogen
Assignee: Japan Display Central Inc
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Filing: 1992-01-24
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Granted: 1993-11-30
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Expires: 2012-01-24
Abstract
Abstract A polysilicon film pattern of a first conductivity type is formed on one main surface of a substrate. A gate electrode is formed on a predetermined region of the pattern with a gate insulating from interposed therebetween. A source region and a drain region, of a second conductivity type are formed in the upper portions of the pattern. These regions are separated by a region of the pattern located under the gate electrode, and are connected to a source electrode and a drain electrode, respectively. The electrodes are electrically insulated from each other by means of an interlayer insulating film The polysilicon film pattern contains nitrogen, whose concentration is, in that particular region of the polysilicon film pattern which extends from half of the thickness thereof to the bottom thereof, set higher than that of nitrogen inevitably contained in a polysilicon film formed by a CVD method, and set so as to restrain the formation of silicon crystal nuclei Further, the pattern is formed by subjecting an amorphous silicon film having the same nitrogen concentration distribution as above, to a solid-phase growth process.
Inventors
- 👤 Shunsuke Seto
- 👤 Hidetoshi Nozaki
- 👤 Kazushige Mori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 11:15
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0314; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6731; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6745; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2921; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; Y; Y10; Y10S; Y10S257/00; Y10S257/914
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
122 words
A polysilicon thin film semiconductor device comprising: a polysilicon film pattern formed on a substrate, and containing nitrogen whose concentration is, in that particular region of the polysilicon film pattern which extends from half of a thickness thereof to a bottom thereof, set within a range of 10 18 atoms/cm 3 -10 19 atoms/cm 3 so as to restrain the formation of silicon crystal nuclei; a gate electrode provided on a gate insulating film, said insulating film interposed between said gate electrode and said polysilicon film pattern; and a source electrode and a drain electrode which are connected to the pattern such that said source and drain electrodes are separated from one another by said ge electrode and said gate insulating film.
Claim 2
Dependent Claim
122 words
A polysilicon thin film semiconductor device comprising: a polysilicon film pattern formed on a substrate, and containing nitrogen whose concentration is, in that particular region of the polysilicon film pattern which extends from half of a thickness thereof to a bottom thereof, set within a range of 10 18 atoms/cm 3 -10 19 atoms/cm 3 so as to restrain the formation of silicon crystal nuclei; a gate electrode provided on a gate insulating film, said insulating film interposed between said gate electrode and said polysilicon film pattern; and a source electrode and a drain electrode which are connected to the pattern such that said source and drain electrodes are separated from one another by said ge electrode and said gate insulating film.
Claim 3
Dependent Claim
47 words
The polysilicon thin film semiconductor device according to claim 1, wherein the polysilicon film pattern is formed by a process including the step of subjecting an amorphous silicon film having the same concentration distribution of nitrogen as the resultant polysilicon film pattern, to a solid-phase growth process.
Claim 4
Dependent Claim
36 words
The polysilicon thin film semiconductor device according to claim 1, wherein the concentration of nitrogen in the polysilicon film pattern has a maximum value in the vicinity of the boundary face between the substrate and pattern.
Claim 5
Dependent Claim
43 words
The polysilicon thin film semiconductor device according to claim 1, wherein the concentration of nitrogen in the polysilicon film pattern has a maximum value in a region of the pattern having a thickness of 0 to 80Å from the bottom surface thereof upward.
Claim 6
Dependent Claim
29 words
The polysilicon thin film semiconductor device according to claim 1, wherein the concentration of nitrogen in the polysilicon film pattern increases with increasing distance from the upper surface thereof.
Claim 7
Dependent Claim
88 words
The polysilicon thin film semiconductor device according to claim 1, wherein the polysilicon film pattern is a semiconductor layer of a first conductivity type having a source region and a drain region of a second conductivity type formed in the upper portion thereof with a channel-forming region interposed therebetween, the gate electrode being provided on said gate insulating film, said gate insulating film interposed between said gate electrode and said channel-forming region, the source electrode and drain electrode being connected to the source region and drain region, respectively.
Claim 8
Dependent Claim
52 words
The polysilicon thin film semiconductor device according to claim 1, wherein the gate electrode is connectively formed on the gate insulating film, and the source electrode and drain electrode are respectively connected to regions of the polysilicon film pattern with a region of the pattern located under the gate electrode interposed therebetween.
Claim 9
Dependent Claim
30 words
The polysilicon thin film semiconductor device according to claim 1, wherein the diameter of a silicon crystal grain in the polysilicon film pattern falls within a range of 150-250 nm.
Claim 10
Dependent Claim
32 words
The polysilicon thin film semiconductor device according to claim 2, wherein the amorphous silicon film is formed by a CVD method using a reaction gas comprising SiH 4 and NH 3 .
Claim 11
Dependent Claim
46 words
The polysilicon thin film semiconductor device according to claim 2, wherein the amorphous silicon film is formed by depositing the film by a CVD method using a reaction gas comprising of SiH 4 and NH 3 , and then implanting nitrogen ions into the deposited film.
Claim 12
Dependent Claim
53 words
The polysilicon thin from semiconductor device according to claim 1, wherein the concentration of nitrogen in the polysilicon from pattern extending from the upper surface thereof to less than half the thickness thereof is less than the concentration o nitrogen in the region extending from half a thickness thereof to a bottom thereof.
Claim 13
Dependent Claim
18 words
The polysilicon thin film semiconductor device according to claim 1, wherein said substrate is made of synthetic quartz.
Claim 14
Dependent Claim
132 words
A polysilicon thin film semiconductor device comprising: a polysilicon film pattern of a first conductivity-type formed on a substrate, having a thickness of 100-200 nm, and containing nitrogen whose concentration falls within a range of 10 18 atoms/cm 3 -10.sup.· atoms cm 3 in that region of the polysilicon film pattern which extends from half of a thickness thereof to a bottom thereof; a gate electrode formed on a gate insulating film, said gate insulating film interposed between said gate electrode and said polysilicon film pattern; a source region and a drain region of a second conductivity type are separated form each other by means of a region of the pattern located under the gate electrode; and a source electrode and a drain electrode connected to the source and drain regions, respectively.
Claim 15
Dependent Claim
132 words
A polysilicon thin film semiconductor device comprising: a polysilicon film pattern of a first conductivity-type formed on a substrate, having a thickness of 100-200 nm, and containing nitrogen whose concentration falls within a range of 10 18 atoms/cm 3 -10.sup.· atoms cm 3 in that region of the polysilicon film pattern which extends from half of a thickness thereof to a bottom thereof; a gate electrode formed on a gate insulating film, said gate insulating film interposed between said gate electrode and said polysilicon film pattern; a source region and a drain region of a second conductivity type are separated form each other by means of a region of the pattern located under the gate electrode; and a source electrode and a drain electrode connected to the source and drain regions, respectively.
Claim 16
Dependent Claim
46 words
The polysilicon thin film semiconductor device according to claim 13, wherein the polysilicon film pattern is formed by a process including the step of subjecting an amorphous silicon film having the same nitrogen concentration distribution as the resultant polysilicon film pattern, to a solid-phase growth process.
Claim 17
Dependent Claim
53 words
The polysilicon thin film semiconductor device according to claim 13, wherein the concentration of nitrogen in the polysilicon film pattern extending from the upper surface thereof to less than half the thickness thereof is less than the concentration of nitrogen in the region extending from half a thickness thereof to a bottom thereof.
Claim 18
Dependent Claim
18 words
The polysilicon thin film semiconductor device according to claim 13, wherein said substrate is made of synthetic quartz.
Claim 19
Dependent Claim
27 words
The polysilicon thin film semiconductor device according to claim 13, wherein said source and drain regions are formed in an upper portion of said polysilicon from pattern.
References Cited (Backward Citations)
US4766477A
Cited
JPS61203682A
Cited
US4772927A
Cited
US4755865A
Cited
US4814292A
Cited
JPS6341029A
Cited
JPS63146436A
Cited
US5132754A
Cited
EP0383230A2
Cited
JPH03265142A
Cited
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