US5266815A — Semiconductor integrated circuit device having su…

Claim 1

Independent Claim 110 words

A semiconductor integrated circuit comprising: a body including silicon; a high-T c superconductive material positioned overlying said body, said superconductive material adapted to be superconducting during operation of the semiconductor integrated circuit; and an isolation member, of a material preventing diffusion of constituent elements of the superconductive material into the body, coating said superconductive material, and positioned between the body and superconductive material so as to prevent the constituent elements of said superconductive material from diffusing into said body from said superconductive material, whereby degradation of the integrated circuit, due to constituent elements of the superconductive material diffusing into said body, is avoided, wherein said isolation member includes a nitride.

Claim 2

Dependent Claim 110 words

A semiconductor integrated circuit comprising: a body including silicon; a high-T c superconductive material positioned overlying said body, said superconductive material adapted to be superconducting during operation of the semiconductor integrated circuit; and an isolation member, of a material preventing diffusion of constituent elements of the superconductive material into the body, coating said superconductive material, and positioned between the body and superconductive material so as to prevent the constituent elements of said superconductive material from diffusing into said body from said superconductive material, whereby degradation of the integrated circuit, due to constituent elements of the superconductive material diffusing into said body, is avoided, wherein said isolation member includes a nitride.

Claim 3

Dependent Claim 66 words

A semiconductor integrated circuit as described in claim 1, wherein said superconductive material contains at least one of alkaline metal, alkaline earth metal, and a metal forming a deep level in said body, said isolation member preventing diffusion of said at least one of alkaline metal, alkaline earth metal and a metal forming a deep level in said body from the superconductive material into said body.

Claim 4

Dependent Claim 30 words

A semiconductor integrated circuit as described in claim 1, wherein said nitride includes a compound selected from the group consisting of silicon nitride and a nitride of a transition metal.

Claim 5

Dependent Claim 35 words

A semiconductor integrated circuit as described in claim 1, further comprising a film of conductive material different from said superconductive material, making electrical contact at least at selected portions of said high Tc superconductive material.

Claim 6

Dependent Claim 40 words

A semiconductor integrated circuit as described in claim 1, further comprising: a plurality of discrete islands formed of a first superconductive material; and a conductive film formed of a second conductive material and electrically connecting said plurality of discrete islands.

Claim 7

Dependent Claim 42 words

A semiconductor integrated circuit as described in claim 1, further comprising: a superconductive resistor circuit including a film of a superconductive material; and a temperature sensing circuit for sensing a temperature change by a change in resistance of said superconductive resistor circuit.

Claim 8

Dependent Claim 24 words

A semiconductor integrated circuit as described in claim 6, wherein said superconductive resistor circuit includes at least two superconductive resistors of different critical temperature.

Claim 9

Dependent Claim 35 words

A semiconductor integrated circuit as described in claim 6, further comprising a control circuit for controlling at least one of voltage and current of an output based on the output of said temperature sensing circuit.

Claim 10

Dependent Claim 35 words

A semiconductor integrated circuit as described in claim 6, further comprising an adjusting circuit for supplying a current of an adjusted level to said superconductive material, thereby adjusting the critical temperature of said superconductive material.

Claim 11

Dependent Claim 30 words

A semiconductor integrated circuit as described in claim 7, wherein said at least two superconductive resistors respectively have a common main component and are doped with different kinds of impurities.

Claim 12

Dependent Claim 45 words

A semiconductor integrated circuit as described in claim 7, wherein said at least two superconductive resistors have a common main component and have been subjected to different thermal treatment in forming the respective superconductive resistor, so as to from superconductive resistors with different critical temperatures.

Claim 13

Dependent Claim 38 words

A semiconductor integrated circuit as described in claim 6, further comprising a source of magnetic field for applying a magnetic field of adjusted field intensity to said superconductive material, thereby adjusting the critical temperature of said superconductive material.

Claim 14

Dependent Claim 152 words

A semiconductor integrated circuit comprising: a substrate including a semiconductor material; an insulator film formed at least partially on said substrate; a layer of wiring formed of a high T c superconductive material and disposed on at least one of said substrate and said insulator film, said layer of wiring adapted to be superconducting during operation of the semiconductor integrated circuit; and a barrier layer made of a material which includes a nitride, for preventing diffusion of a metal ion of said superconductive material of said layer of wiring into said at least one of said substrate and said insulator film, upon which the layer of wiring is disposed, said barrier layer being disposed between said layer of wiring and said at least one of said substrate and said insulator film, whereby degradation of the integrated circuit, due to the metal ion of the superconductive material diffusing into said substrate, is avoided.

Claim 15

Dependent Claim 152 words

A semiconductor integrated circuit comprising: a substrate including a semiconductor material; an insulator film formed at least partially on said substrate; a layer of wiring formed of a high T c superconductive material and disposed on at least one of said substrate and said insulator film, said layer of wiring adapted to be superconducting during operation of the semiconductor integrated circuit; and a barrier layer made of a material which includes a nitride, for preventing diffusion of a metal ion of said superconductive material of said layer of wiring into said at least one of said substrate and said insulator film, upon which the layer of wiring is disposed, said barrier layer being disposed between said layer of wiring and said at least one of said substrate and said insulator film, whereby degradation of the integrated circuit, due to the metal ion of the superconductive material diffusing into said substrate, is avoided.

Claim 16

Dependent Claim 26 words

A semiconductor integrated circuit device as described in claim 13, wherein said barrier layer is formed of a material which does not reduce said superconductive material.

Claim 17

Dependent Claim 124 words

A semiconductor integrated circuit comprising: a body including silicon; a wiring layer formed of a high T c superconductive material, overlying said body, said wiring layer being adapted to be superconductive during operation of the semiconductor integrated circuit; an intermediate member intervening between said body and said wiring layer, said including (1) a contact layer forming a low resistance contact with said body and (2) a barrier layer made of a material which includes a nitride, for preventing diffusion of a metal ion, which is a constituent element of said superconductive material, from the superconductive material of said wiring layer into said body, whereby degradation of the integrated circuit, due to the metal ion of the superconductive material diffusing into said body, is avoided.

Claim 18

Dependent Claim 124 words

A semiconductor integrated circuit comprising: a body including silicon; a wiring layer formed of a high T c superconductive material, overlying said body, said wiring layer being adapted to be superconductive during operation of the semiconductor integrated circuit; an intermediate member intervening between said body and said wiring layer, said including (1) a contact layer forming a low resistance contact with said body and (2) a barrier layer made of a material which includes a nitride, for preventing diffusion of a metal ion, which is a constituent element of said superconductive material, from the superconductive material of said wiring layer into said body, whereby degradation of the integrated circuit, due to the metal ion of the superconductive material diffusing into said body, is avoided.

Claim 19

Dependent Claim 26 words

A semiconductor integrated circuit as described in claim 15, wherein said barrier layer is formed of a material which does not reduce said oxide superconductive material.

Claim 20

Dependent Claim 32 words

A semiconductor integrated circuit as described in claim 1, wherein said isolation member prevents constituent elements of said superconductive material from diffusing into silicon-containing portions of said body, from said superconductive material.

Claim 21

Dependent Claim 20 words

A semiconductor integrated circuit as described in claim 17, wherein said silicon-containing portions of said body include silicon oxide films.

Claim 22

Dependent Claim 20 words

A semiconductor integrated circuit as described in claim 17, wherein said silicon-containing portions of said body include a silicon substrate.

Claim 23

Dependent Claim 50 words

A semiconductor integrated circuit as described in claim 19, wherein said circuit includes a plurality of semiconductor elements provided as part of said body, said semiconductor elements having active regions formed in said silicon substrate, and wherein said isolation member prevents said constituent elements from diffusing into said active regions.

Claim 24

Dependent Claim 40 words

A semiconductor integrated circuit as described in claim 3, wherein said compound is the nitride of the transition metal, and the transition metal is selected from the group consisting of Ti, Zr, Hf, V, Ni, Ta, Cr, W and Mo.

Claim 25

Dependent Claim 17 words

A semiconductor integrated circuit as described in claim 1, wherein the superconductive materials has perovskite crystal structure.

Claim 26

Dependent Claim 20 words

A semiconductor integrated circuit as described in claim 1, wherein the superconductive material has K 2 NiF 4 crystal structure.

Claim 27

Dependent Claim 42 words

A semiconductor integrated circuit as described in claim 1, further comprising a shunt wiring provided in electrical contact with said superconductive material, whereby when a superconducting state of said superconductive material is lost an electrical current can by-pass through said shunt wiring.

Claim 28

Dependent Claim 17 words

A semiconductor integrated circuit as described in claim 24, wherein said shunt wiring is formed of Al.

Claim 29

Dependent Claim 17 words

A semiconductor integrated circuit as described in claim 24, wherein said shunt wiring is formed of TiN.

Claim 30

Dependent Claim 67 words

A semiconductor integrated circuit as described in claim 1, wherein the superconductive material is provided at at least two spaced-apart levels, in a direction extending away from the body, with an inter-layer insulating film between adjacent levels of the superconductive material, and wherein said isolation member is provided at least between said body and superconductive material at a lowermost level of superconductive material, closest to the body.

Claim 31

Dependent Claim 37 words

A semiconductor integrated circuit as described in claim 27, wherein said inter-layer insulating film is formed of silicon oxide, and wherein said isolation member is provided so as to substantially sandwich each level of the superconductive material.

Claim 32

Dependent Claim 17 words

A semiconductor integrated circuit as described in claim 28, wherein the isolation member is formed of TiN.

Claim 33

Dependent Claim 99 words

A semiconductor integrated circuit comprising: a body, containing semiconductor material; a film of a high-T c superconductive material positioned so as to overlie said body, said film being adapted to be superconducting during operation of the semiconductor integrated circuit; and an isolation member, of a material, which includes a nitride, preventing diffusion of constituent elements of the superconductive material into the body, positioned so as to prevent the constituent elements of said superconductive material from diffusing into said body, whereby degradation of the integrated circuit, due to constituent elements of the superconductive material diffusing into said body, is avoided.

Claim 34

Dependent Claim 99 words

A semiconductor integrated circuit comprising: a body, containing semiconductor material; a film of a high-T c superconductive material positioned so as to overlie said body, said film being adapted to be superconducting during operation of the semiconductor integrated circuit; and an isolation member, of a material, which includes a nitride, preventing diffusion of constituent elements of the superconductive material into the body, positioned so as to prevent the constituent elements of said superconductive material from diffusing into said body, whereby degradation of the integrated circuit, due to constituent elements of the superconductive material diffusing into said body, is avoided.

Claim 35

Dependent Claim 26 words

A semiconductor integrated circuit as described in claim 30, wherein said semiconductor material is a material selected from the group consisting of GaAs, InSb, and InP.

Claim 36

Dependent Claim 29 words

A semiconductor integrated circuit as described in claim 30, wherein said isolation member prevents constituent elements of said superconductive material from diffusing into semiconductor material-containing portions of said body.

Claim 37

Dependent Claim 28 words

A semiconductor integrated circuit as described in claim 30, wherein said nitride is selected from the group consisting of silicon nitride and a nitride of a transition metal.

Claim 38

Dependent Claim 81 words

Structure for preventing diffusion of constituent elements of superconductive material into a body of semiconductor material, comprising: a body of semiconductor material; a film of a high T c superconductive material overlying said body, such that said film will be superconducting when said film is at a temperature less than the critical temperature of the high T c superconductive material; and an isolation member, of a material, which includes a nitride, preventing diffusion of the constituent elements of the superconductive material.

Claim 39

Dependent Claim 81 words

Structure for preventing diffusion of constituent elements of superconductive material into a body of semiconductor material, comprising: a body of semiconductor material; a film of a high T c superconductive material overlying said body, such that said film will be superconducting when said film is at a temperature less than the critical temperature of the high T c superconductive material; and an isolation member, of a material, which includes a nitride, preventing diffusion of the constituent elements of the superconductive material.

Claim 40

Dependent Claim 45 words

Structure as described in claim 34, wherein said semiconductor material includes active regions of semiconductor elements of a semiconductor device, the isolation member preventing degradation of the semiconductor elements due to the constituent elements of the high T c superconductive material diffusing into the body.

Claim 41

Dependent Claim 17 words

Structure as described in claim 34, wherein said structure forms part of a semiconductor integrated circuit device.

Claim 42

Dependent Claim 81 words

Structure for preventing diffusion of constituent elements of superconductive material external of the superconductive material, comprising: a member of a first material selected from the group consisting of a semiconductor material and an insulator; a film of a high T c superconductive material said film being superconducting at a temperature less than the critical temperature of the high T c superconductive material; and an isolation member, of a second material, which includes a nitride, preventing said diffusion of the constituent elements.

Claim 43

Dependent Claim 81 words

Structure for preventing diffusion of constituent elements of superconductive material external of the superconductive material, comprising: a member of a first material selected from the group consisting of a semiconductor material and an insulator; a film of a high T c superconductive material said film being superconducting at a temperature less than the critical temperature of the high T c superconductive material; and an isolation member, of a second material, which includes a nitride, preventing said diffusion of the constituent elements.

Claim 44

Dependent Claim 21 words

Structure as described in claim 37, wherein said first material is selected from the group consisting of silicon and silicon oxide.

Claim 45

Dependent Claim 22 words

A structure as described in claim 38, wherein said high T c superconductive material is a high T c oxide superconductive material.

Claim 46

Dependent Claim 28 words

Structure as described in claim 38, wherein said constituent elements are at least one selected from the group consisting of Pb, Cu, Ba, La, Sr, K and Y.

Claim 47

Dependent Claim 25 words

Structure as described in claim 37, wherein said isolation member is interposed between the member and the film of a high T c superconductive material.

Claim 48

Dependent Claim 22 words

Structure as described in claim 37, wherein said isolation member is a coating on said film of high T c superconductive material.

Claim 49

Dependent Claim 16 words

Structure as described in claim 37, wherein said nitride in a nitride of a transition metal.

Claim 50

Dependent Claim 31 words

Structure as described in claim 37, wherein said nitride is a nitride of a metal selected from the group consisting of Ti, Zr, Hf, V, Ni, Ta, Cr, W and Mo.

Annuity Stage	Window Opens	Payment Deadline	Surcharge Period Until	Estimated Fee	Status
3.5 Years (Year 4)	1996-11-29	1997-05-31	1997-11-30	$2000.00	Window Closed / Lapsed
7.5 Years (Year 8)	2000-11-29	2001-05-31	2001-11-30	$3760.00	Window Closed / Lapsed
11.5 Years (Year 12)	2004-11-29	2005-05-31	2005-11-30	$7700.00	Window Closed / Lapsed

Semiconductor integrated circuit device having superconductive layer and isolation member with nitride isolation

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