US4724475A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Toshiba Corp
•
Filing: 1986-06-03
•
Granted: 1988-02-09
•
Expires: 2006-06-03
Abstract
Abstract A semiconductor device has the following components: a semiconductor substrate; a first region of a first conductivity type which is formed in the surface of the semiconductor substrate; a second region of a second conductivity type which is formed adjacent to the first region, in the surface of the semiconductor substrate; a first electrode which is formed on the first region; and a second electrode which is formed on the second region, the first electrode being so arranged as to be connected outside of the device, in accordance with a pressure contact. The first electrode comprises: a lower layer which is formed on the first region and consists of a metal capable of coming into ohmic contact with the semiconductor substrate; an intermediate layer of a hard conductive material, which layer is formed on the lower layer and is thicker than the lower layer; and an upper layer of a soft material, which layer is formed on the intermediate layer and is thinner than the intermediate layer.
Inventors
- 👤 Hideo Matsuda
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 01:08
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/10; H10W76/12; H10W76/13; H10W76/138; H10D; H10D64/00; H10D64/20; H10D64/23; H10D64/231; H10D64/233; H10W20/00; H10W20/40; H10W20/482; H10W20/484; H10W72/00
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
250 words
A semiconductor device for electrical connection with an external electrode through pressure contact at pressures sufficiently high to obviate the need for soldering or otherwise bonding the semiconductor device to the external electrode, the semiconductor device comprising: a semiconductor substrate; a first region of first conductivity type which is formed in the surface of said semiconductor substrate; a second region of a second conductivity type which is formed in said surface of said semiconductor substrate adjacent to said first region; a first electrode formed on said first region for pressure contact with the external electrode; and a second electrode formed on said second region; said first electrode of said semiconductor device including: a relatively thin lower layer having a thickness of 0.5 to 3 μm formed on said first region and made of a member selected from the group consisting of aluminum, gold and an aluminum/poly-silicon two-layered structure; an intermediate layer having a thickness of 4 to 15 μm formed on said lower layer and made of a member selected from the group consisting of molybdenum, titanium, tungsten, cobalt, a silicide thereof and a nitride thereof, said intermediate layer being substantially thicker than said lower layer; and a relatively thin upper layer of conductive material having a thickness of 0.5 to 3 μm formed on said intermediate layer for engaging in pressure contact the external electrode, said upper layer being thinner than said intermediate layer and being formed of a metal selected from the group consisting of aluminum and gold.
Claim 2
Dependent Claim
250 words
A semiconductor device for electrical connection with an external electrode through pressure contact at pressures sufficiently high to obviate the need for soldering or otherwise bonding the semiconductor device to the external electrode, the semiconductor device comprising: a semiconductor substrate; a first region of first conductivity type which is formed in the surface of said semiconductor substrate; a second region of a second conductivity type which is formed in said surface of said semiconductor substrate adjacent to said first region; a first electrode formed on said first region for pressure contact with the external electrode; and a second electrode formed on said second region; said first electrode of said semiconductor device including: a relatively thin lower layer having a thickness of 0.5 to 3 μm formed on said first region and made of a member selected from the group consisting of aluminum, gold and an aluminum/poly-silicon two-layered structure; an intermediate layer having a thickness of 4 to 15 μm formed on said lower layer and made of a member selected from the group consisting of molybdenum, titanium, tungsten, cobalt, a silicide thereof and a nitride thereof, said intermediate layer being substantially thicker than said lower layer; and a relatively thin upper layer of conductive material having a thickness of 0.5 to 3 μm formed on said intermediate layer for engaging in pressure contact the external electrode, said upper layer being thinner than said intermediate layer and being formed of a metal selected from the group consisting of aluminum and gold.
Claim 3
Dependent Claim
247 words
A semiconductor device for electrical connection with an external electrode through pressure contact at pressures sufficiently high to obviate the need for soldering or otherwise bonding the semiconductor device to the external electrode, the semiconductor device comprising: a semiconductor substrate; a first region of a first conductivity type which is formed in the surface of said semiconductor substrate; a second region of a second conductivity type which is formed in said surface of said semiconductor substrate adjacent to said first region, a first electrode formed on said first region for pressure contact with the external electrode; and a second electrode formed on said second region; said first electrode of said semiconductor device including: a relatively thin lower layer having a thickness of 0.5 to 3 μm formed on said first region and consisting of a conductive metal in ohmic contact with said semiconductor substrate to minimize voltage drop between said lower layer and said semiconductor substrate; an intermediate layer having a thickness of 4 to 15 μm on said lower layer and consisting of a conductive material resistant to electrode softening or deformation when subjected to high pressures, high temperatures or heat failure; and a relatively thin upper layer having a thickness of 0.5 to 3 μm formed on said intermediate layer for engaging in pressure conduct the external electrode, said upper layer being formed of a conductive metal which is sufficiently soft to minimize the contact thermal resistance between said upper layer and the external electrode.
Claim 4
Dependent Claim
247 words
A semiconductor device for electrical connection with an external electrode through pressure contact at pressures sufficiently high to obviate the need for soldering or otherwise bonding the semiconductor device to the external electrode, the semiconductor device comprising: a semiconductor substrate; a first region of a first conductivity type which is formed in the surface of said semiconductor substrate; a second region of a second conductivity type which is formed in said surface of said semiconductor substrate adjacent to said first region, a first electrode formed on said first region for pressure contact with the external electrode; and a second electrode formed on said second region; said first electrode of said semiconductor device including: a relatively thin lower layer having a thickness of 0.5 to 3 μm formed on said first region and consisting of a conductive metal in ohmic contact with said semiconductor substrate to minimize voltage drop between said lower layer and said semiconductor substrate; an intermediate layer having a thickness of 4 to 15 μm on said lower layer and consisting of a conductive material resistant to electrode softening or deformation when subjected to high pressures, high temperatures or heat failure; and a relatively thin upper layer having a thickness of 0.5 to 3 μm formed on said intermediate layer for engaging in pressure conduct the external electrode, said upper layer being formed of a conductive metal which is sufficiently soft to minimize the contact thermal resistance between said upper layer and the external electrode.
Claim 5
Dependent Claim
18 words
A device according to claim 1 or 2, wherein said first region comprises a plurality of island regions.
Claim 6
Dependent Claim
16 words
A device according to claim 1 or 2, wherein said first region comprises a complex pattern.
Claim 7
Dependent Claim
35 words
A device according to claim 1 or 2, wherein said first region is so formed as to extend upward from said semiconductor substrate, and extends to a level higher than that of said second region.
Claim 8
Dependent Claim
23 words
A device according to claim 1 or 2, wherein said first region extends to the same level as that of said second region.
Claim 9
Dependent Claim
16 words
A device according to claim 1 or 2, wherein said semiconductor device is a bipolar transistor.
Claim 10
Dependent Claim
15 words
A device according to claim 1 or 2, wherein said semiconductor device is a thyristor.
Claim 11
Dependent Claim
41 words
A semiconductor device according to claim 1 or 2, wherein said lower layer has a thickness of approximately 1 μm, said intermediate layer has a thickness of approximately 10 μm, and said upper layer has a thickness of approximately 1 μm.
Claim 12
Dependent Claim
34 words
The semiconductor device according to claim 1 or 2, wherein said intermediate layer is at least seven times thicker than said lower layer and is at least seven times thicker than said upper layer.
Claim 13
Dependent Claim
30 words
The semiconductor device according to claim 10, wherein said lower layer is made of Al, said intermediate layer is made of Mo, and said upper layer is made of Al.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-02-08 | 1991-08-10 | 1992-02-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-02-08 | 1995-08-10 | 1996-02-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-02-08 | 1999-08-10 | 2000-02-09 | $7700.00 | Window Closed / Lapsed |