Patent US1811275A successfully refreshed from Google Patents.
Patent US5264077A successfully refreshed from Google Patents.
US5264077A
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US
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Method for producing a conductive oxide pattern
Assignee: Semiconductor Energy Laboratory Co Ltd
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Filing: 1992-11-02
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Granted: 1993-11-23
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Expires: 2012-11-02
Abstract
Abstract A conductive oxide film is formed on a substrate at a low temperature. The formed conductive oxide film is not very dense because of the low temperature. Therefore the formed conductive oxide film can easily be etched by an etchant having a weak etching capability. And by the etching a pattern of the formed conductive oxide film is produced. The patterned conductive oxide film is oxidized at a temperature in the range of 100 DEG -400 DEG C. In this way a conductive oxide pattern is produced in a shorter time in the method of the present invention than in a conventional method and the conductive oxide pattern produced by the method of the present invention has the almost same resistivity as the conductive oxide pattern produced by the conventional method and has an improved pattern edge and an improved reproducibility.
Inventors
- 👤 Takashi Fukui
- 👤 Naoya Sakamoto
- 👤 Takeshi Fukada
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 23:45
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/1333; G02F1/1343; G02F1/13439; H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/22; H10F30/223; H10F30/2235; H10F71/00; H10F71/138; Y; Y02; Y02E; Y02E10/00; Y02E10/50
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
30 words
A method for producing a conductive oxide pattern comprising: forming a conductive oxide layer on an insulating substrate; patterning said conductive oxide layer; and oxidizing the patterned conductive oxide layer.
Claim 2
Independent Claim
30 words
A method for producing a conductive oxide pattern comprising: forming a conductive oxide layer on an insulating substrate; patterning said conductive oxide layer; and oxidizing the patterned conductive oxide layer.
Claim 3
Dependent Claim
29 words
The method for producing a conductive oxide pattern in claim 1 wherein the temperature of said substrate is not more than 100° C. when said forming step is performed.
Claim 4
Dependent Claim
28 words
The method for producing a conductive oxide pattern in claim 2 wherein said oxidizing step is performed at a temperature in the range of 100° to 400° C.
Claim 5
Independent Claim
90 words
A method for producing a conductive oxide pattern comprising the steps of: forming a conductive oxide layer on a substrate at a substrate temperature not higher than 100° C.; forming a mask pattern on said conductive oxide layer; etching a portion of said conductive oxide layer with an etchant consisting essentially of hydrochloric acid in order to leave a portion of said conductive oxide layer under said mask pattern remaining; removing said mask pattern; and oxidizing the remaining portion of said conductive oxide layer to produce said conductive oxide pattern.
Claim 6
Independent Claim
90 words
A method for producing a conductive oxide pattern comprising the steps of: forming a conductive oxide layer on a substrate at a substrate temperature not higher than 100° C.; forming a mask pattern on said conductive oxide layer; etching a portion of said conductive oxide layer with an etchant consisting essentially of hydrochloric acid in order to leave a portion of said conductive oxide layer under said mask pattern remaining; removing said mask pattern; and oxidizing the remaining portion of said conductive oxide layer to produce said conductive oxide pattern.
Claim 7
Dependent Claim
19 words
The method for producing a conductive oxide pattern in claim 4 wherein said mask pattern is a photoresist pattern.
Claim 8
Dependent Claim
29 words
The method for producing a conductive oxide pattern in claim 5 wherein said oxidizing step is performed at a temperature in the range of 100° C. to 400° C.
Claim 9
Dependent Claim
24 words
The method for producing a conductive oxide pattern in claim 6 wherein the concentration of said hydrochloric acid is not more than 6 normality.
Claim 10
Dependent Claim
22 words
The method for producing a conductive oxide pattern in claim 4 wherein said conductive oxide pattern is made of indium tin oxide.
Claim 11
Dependent Claim
21 words
The method for producing a conductive oxide pattern in claim 4 wherein said conductive oxide pattern is made of tin oxide.
Claim 12
Independent Claim
112 words
A method for producing a conductive oxide pattern comprising the steps of: forming a conductive oxide layer on a substrate at a substrate temperature not higher than 100° C.; forming a mask pattern on said conductive oxide layer; etching a portion of said conductive oxide layer with an etchant consisting essentially of hydrochloric acid in order to leave a portion of said conductive oxide layer under said mask pattern remaining; removing said mask pattern by a plasma ashing with said substrate heated; oxidizing the remaining portion of said conductive oxide layer, wherein said removing step and said oxidizing step are sequentially performed in a common reaction container with an oxygen containing plasma.
Claim 13
Independent Claim
112 words
A method for producing a conductive oxide pattern comprising the steps of: forming a conductive oxide layer on a substrate at a substrate temperature not higher than 100° C.; forming a mask pattern on said conductive oxide layer; etching a portion of said conductive oxide layer with an etchant consisting essentially of hydrochloric acid in order to leave a portion of said conductive oxide layer under said mask pattern remaining; removing said mask pattern by a plasma ashing with said substrate heated; oxidizing the remaining portion of said conductive oxide layer, wherein said removing step and said oxidizing step are sequentially performed in a common reaction container with an oxygen containing plasma.
Claim 14
Dependent Claim
19 words
The method for producing a conductive oxide pattern in claim 10 wherein said mask pattern is a photoresist pattern.
Claim 15
Dependent Claim
30 words
The method for producing a conductive oxide pattern in claim 11 wherein the temperature of said substrate is not more than 100° C. when said conductive oxide layer is formed.
Claim 16
Dependent Claim
22 words
The method for producing a conductive oxide pattern in claim 10 wherein the oxidized conductive oxide layer is made of tin oxide.
Claim 17
Dependent Claim
21 words
The method for producing a conductive oxide pattern in claim 11 wherein said removing step is performed in an oxidizing atmosphere.
Claim 18
Independent Claim
101 words
A method for producing a conductive oxide pattern comprising the steps of: forming a conductive oxide layer on a substrate; forming a mask pattern on said conductive oxide layer; etching a portion of said conductive oxide layer in order to leave a portion of said conductive oxide layer under said mask pattern remaining; removing said mask pattern; and forming a second layer on said substrate and the remaining portion of said conductive oxide layer; wherein the formation of said second layer includes a step of heating said substrate in an oxidizing atmosphere so that said conductive oxide layer is simultaneously oxidized.
Claim 19
Independent Claim
101 words
A method for producing a conductive oxide pattern comprising the steps of: forming a conductive oxide layer on a substrate; forming a mask pattern on said conductive oxide layer; etching a portion of said conductive oxide layer in order to leave a portion of said conductive oxide layer under said mask pattern remaining; removing said mask pattern; and forming a second layer on said substrate and the remaining portion of said conductive oxide layer; wherein the formation of said second layer includes a step of heating said substrate in an oxidizing atmosphere so that said conductive oxide layer is simultaneously oxidized.
Claim 20
Dependent Claim
21 words
The method for producing a conductive oxide pattern in claim 15 wherein said etching step is performed utilizing a hydrochloric acid.
Claim 21
Dependent Claim
19 words
The method for producing a conductive oxide pattern in claim 16 wherein said mask pattern is a photoresist pattern.
Claim 22
Dependent Claim
30 words
The method for producing a conductive oxide pattern in claim 17 wherein the temperature of said substrate is not more than 100° C. when said conductive oxide layer is formed.
Claim 23
Dependent Claim
24 words
The method for producing a conductive oxide pattern in claim 18 wherein the concentration of said hydrochloric acid is not more than 6 normality.
Claim 24
Dependent Claim
23 words
The method for producing a conductive oxide pattern in claim 16 wherein the oxidized conductive oxide layer is made of indium tin oxide.
Claim 25
Dependent Claim
25 words
A method according to claim 15 wherein said second layer comprises a material selected from the group consisting of silicon oxide, silicon nitride and polyimide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1996-11-22 | 1997-05-24 | 1997-11-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-22 | 2001-05-24 | 2001-11-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-22 | 2005-05-24 | 2005-11-23 | $7700.00 | Window Closed / Lapsed |