Patent US5262356A successfully refreshed from Google Patents.
US5262356A
Expired / Lapsed
US
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Method of treating a substrate wherein the flow rates of the treatment gases are equal
Assignee: Mitsubishi Electric Corp
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Filing: 1991-03-26
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Granted: 1993-11-16
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Expires: 2011-03-26
Abstract
Abstract A method of treating a substrate with substantially equal flow rates of treatment gases in a treatment chamber containing the substrate. Because the times during which the treatment gases pass through pipes are controlled, even when the flow rates of the treatment gases differ appreciably, the impurity concentration in a film near the interface between the substrate and the film reaches a desired concentration. Also, when the times during which the treatment gases pass through the pipes are short, the treatment gases are unlikely to adhere to the walls of the pipes. It is thus possible to reduce the frequency of dummy runs.
Inventors
- 👤 Atsuhiro Fujii
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:11
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45512; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/448; C23C16/4481; C23C16/4482; C23C16/45561; C23C16/52; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328
Claims Analysis
Total Claims: 19
Claim 1
Independent Claim
97 words
A method of treating a substrate comprising: placing a substrate in a treatment chamber; separately controlling the flow rates of each of a plurality of treatment gas flows so that the respective flow rates of the treatment gas flows are substantially equal, each treatment gas flow including a respective treatment gas and at least one of the treatment gas flows including a carrier gas; mixing the plurality of treatment gas flows; introducing the mixed plurality of treatment gas flows into the treatment chamber; and treating the substrate with the treatment gas flows introduced in the treatment chamber.
Claim 2
Independent Claim
97 words
A method of treating a substrate comprising: placing a substrate in a treatment chamber; separately controlling the flow rates of each of a plurality of treatment gas flows so that the respective flow rates of the treatment gas flows are substantially equal, each treatment gas flow including a respective treatment gas and at least one of the treatment gas flows including a carrier gas; mixing the plurality of treatment gas flows; introducing the mixed plurality of treatment gas flows into the treatment chamber; and treating the substrate with the treatment gas flows introduced in the treatment chamber.
Claim 3
Dependent Claim
27 words
A method of treating a substrate as claimed in claim 1 wherein each of the treatment gas flows includes a carrier gas and the respective treatment gas.
Claim 4
Dependent Claim
38 words
A method of treating a substrate as claimed in claim 1 including controlling the vapor pressure of at least one treatment liquid, bubbling a carrier gas through the treatment liquid to produce one of the treatment gas flows.
Claim 5
Dependent Claim
18 words
A method of treating a substrate as claimed in claim 1 wherein the substrate is a semiconductor substrate.
Claim 6
Dependent Claim
32 words
A method of treating a substrate as claimed in claim 1 wherein the treatment gases are oxygen gas, silane gas, and phosphine gas to form a phospho-silicate glass film on the substrate.
Claim 7
Dependent Claim
33 words
A method of treating a substrate as claimed in claim 1 wherein the treatment gases are oxygen gas, silane gas, phosphine gas, and borane gas for forming boro-phosphosilicate glass film on the substrate.
Claim 8
Dependent Claim
19 words
A method of treating a substrate as claimed in claim 1 including forming an oxide film on the substrate.
Claim 9
Dependent Claim
20 words
A method of treating a substrate as claimed in claim 1 including forming a doped film on the substrate semiconductor.
Claim 10
Dependent Claim
18 words
A method of treating a substrate as claimed in claim 8 wherein the doped film is p-doped polysilicon.
Claim 11
Dependent Claim
25 words
A method of treating a substrate as claimed in claim 1 including selecting the carrier gas from the group consisting of nitrogen and inert gases.
Claim 12
Dependent Claim
28 words
A method of treating a substrate as claimed in claim 3 wherein the treatment liquids are selected from the group consisting of tetraethylorthosilicate, phosphorus trimethyloxide, and triethyl borate.
Claim 13
Dependent Claim
18 words
A method of treating a substrate as claimed in claim 1 including chemical vapor deposition as the treatment.
Claim 14
Independent Claim
71 words
A method of treating a substrate comprising: placing a substrate in a treatment chamber; introducing a plurality of treatment gases into respective pipes connected to sources of the respective treatment gases and to the treatment chamber; and controlling the times the respective treatment gases travel through the respective pipes from the respective sources to the treatment chamber so that the times are substantially the same for each of the treatment gases.
Claim 15
Independent Claim
71 words
A method of treating a substrate comprising: placing a substrate in a treatment chamber; introducing a plurality of treatment gases into respective pipes connected to sources of the respective treatment gases and to the treatment chamber; and controlling the times the respective treatment gases travel through the respective pipes from the respective sources to the treatment chamber so that the times are substantially the same for each of the treatment gases.
Claim 16
Dependent Claim
42 words
A method of treating a substrate as claimed in claim 13 including controlling the times the respective treatment gases travel through the respective pipe by adding a carrier gas at a controlled flow rate to at least one of the treatment gases.
Claim 17
Dependent Claim
42 words
A method of treating a substrate as claimed in claim 13 including controlling the time a treatment gas derived from a liquid source travels through one of the pipes by controlling the flow rate of a carrier gas through the liquid source.
Claim 18
Dependent Claim
38 words
A method of treating a substrate as claimed in claim 13 including controlling the time a treatment gas derived from a liquid source travels through one of the pipes by controlling the vapor pressure of the liquid source.
Claim 19
Dependent Claim
43 words
A method of treating a substrate as claimed in claim 16 including controlling the time the treatment gas derived from the liquid source travels through one of the pipes by controlling the flow rate of a carrier gas flowing through the liquid source.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-11-15 | 1997-05-17 | 1997-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-11-15 | 2001-05-17 | 2001-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-11-15 | 2005-05-17 | 2005-11-16 | $7700.00 | Window Closed / Lapsed |